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    Infineon Technologies AG IDC06S60CEZJ

    Diode Schottky 600V 6A 2-Pin Die - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IDC06S60CEX1SA1)
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    IDC06S60C Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IDC06S60C Infineon Technologies 2nd generation thinQ! SiC Schottky Diode Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: IDC06S60CE 2nd generation thinQ!TM SiC Schottky Diode Features: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original
    PDF IDC06S60CE

    MS 1117

    Abstract: IEC60721-3-3 IEC60721 Storage of Products Supplied by Infineon Technologies IDC06S60CE
    Text: IDC06S60CE 2nd generation thinQ!TM SiC Schottky Diode A Features: Applications: •      Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching


    Original
    PDF IDC06S60CE L4734E, MS 1117 IEC60721-3-3 IEC60721 Storage of Products Supplied by Infineon Technologies IDC06S60CE

    IDC06S60C

    Abstract: IDT06S60C
    Text: IDC06S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: Applications: • • • • • • • Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior


    Original
    PDF IDC06S60C IDC06S60C IDT06S60C