LM339 equivalent
Abstract: No abstract text available
Text: LM 13 9 /A /239 /A /339 /A /2901 -F,N • MC3302-N DESCRIPTION FEATURES The LM 139 series co n s is ts o f fo u r inde pendent pre cisio n voltag e co m p a ra to rs w ith an o ffse t voltag e s p e c ific a tio n as low as 2.0m V m ax fo r each c o m p a ra to r w h ic h were
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MC3302-N
12VDCl
139/A
LM339 equivalent
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IC LM 1246
Abstract: IC LM 317 LM series voltage regulators ADJ lm 317 317 voltage regulator 5A LM series voltage regulators ic lm 317 t LLM317 IC lm 317 adj regulator diagram 317 TO3
Text: SE PIT E C H CORP SflE ]> • fi13 *113‘ì Q D 0 3 m 7^0 SET 1.5 AMP POSITIVE ADJUSTABLE VOLTAGE REGULATORS ABSOLUTE MAXIMUM RATINGS M A X IM U M U N ITS V|N ' ^OUT 40 Volts Power Dissipation Pd Internally Lim ite d i" Thermal Resis tance Junction to Case
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QD03m
IC LM 1246
IC LM 317
LM series voltage regulators ADJ
lm 317
317 voltage regulator 5A
LM series voltage regulators
ic lm 317 t
LLM317
IC lm 317 adj regulator diagram
317 TO3
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2N2369 AVALANCHE PULSE GENERATOR
Abstract: 2n3054 JEC 600 watts amplifier schematic diagram Germanium drift transistor LM373 AN6311 germanium transistor transitron LM304 AN2918
Text: National PREFACE The purpose of this handbook is to provide a fully indexed and cross-referenced collection of linear in tegrated circuit applications using both monolithic and hybrid circuits from National Semiconductor. Individual application notes are normally written to ex
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LB20-2
2N2369 AVALANCHE PULSE GENERATOR
2n3054
JEC 600 watts amplifier schematic diagram
Germanium drift transistor
LM373
AN6311
germanium transistor
transitron
LM304
AN2918
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JRC 45600
Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES
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ZOP033
ZOP035
ZOP036
ZOP037
ZOP038
ZOP039
ZOP045
ZOP042
ZOP041
ZOP043
JRC 45600
YD 803 SGS
45600 JRC
TDA 7277
TDA 5072
krp power source sps 6360
2904 JRC
Sony
SHA T90 SA
philips HFE 4541
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Untitled
Abstract: No abstract text available
Text: PRODUCT INFORMATION 860 nm 1A292 High-Performance LBD The low thermal droop and high speed of this device allows high-frequency baseband video transm ission w ith minimum distortion. The double-lens optical system provides for optimum coupling of power into the fiber.
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1A292
5/125j
1-800-96M
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74hc240ap
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC240A j s u f f ix Octal 3-S tate Inverting B uffer/ Line Driver/Line Receiver CERAMIC J V| i1i il 11 1 1 1 CASE 732' 03 * n s u f f ix High-Performance Silicon-Gate C M O S W T O i i I ; ^ PLAST,C 73803 case T h e M C 5 4 /7 4 H C 2 4 0 A is id e n tic a l in p in o u t to th e L S 2 4 0 . T h e d e v ic e in p u ts
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MC54/74HC240A
74hc240ap
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM532410 Series 4M X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532410 is a 4M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY5117400 in 24/28 pin SOJ on a 72 pin giass-epoxy printed circuit board. 0.22,«F decoupling capacitor is mounted for each DRAM.
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HYM532410
32-bit
HY5117400
HYM532410M/LM
HYM532410MG/LMG
1CE03-00-MAY93
4b750flfl
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Untitled
Abstract: No abstract text available
Text: HYUNDAI SEMICONDUCTOR HYM540100 Series 1M x 40-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM540100 Is a 1M x 40-bit Fast page mode CMOS DRAM module consisting of ten HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2tyF decoupling capacitor is mounted for each DRAM.
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HYM540100
40-bit
HY514400A
HYM540100M/LM
HYM540100MG/LMG
1CC06-00-M
1CC0S-00-MAY93
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HYUNDAI SEMICONDUCTOR
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM540410 Series 4M X 40-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM540410 is a 4M x 40-bit Fast page mode CMOS DRAM module consisting of ten HY5117400 in 24/28 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each
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HYM540410
40-bit
HY5117400
HYM54041OM/LM/TM/LTM
HYM54041OMG/LMG/TMG/LTMG
HYM540410M/LM
HYM54041
HYUNDAI SEMICONDUCTOR
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CY7C4211-15JI
Abstract: CY7C4201 CY7C4211 CY7C4221 CY7C4231 CY7C4241 CY7C4251 CY7C4421 IDT722X1 nl26
Text: fax id: 5409 •>* CY7C4421/4201 /4211/4221 CY7C4231/4241/4251 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs Functional Description Features • H ig h-speed , low -pow er, first-in , first-o u t F IF O m em o ries • 6 4 x 9 (C Y 7 C 44 21 ) • 256 x 9 (C Y 7 C 4 2 0 1 )
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Y7C4421
CY7C4231
64/256/512/1K/2K/4K/8K
CY7C4421)
CY7C4201
512x9
CY7C4211
CY7C4221
CY7C4231)
CY7C4241
CY7C4211-15JI
CY7C4201
CY7C4211
CY7C4221
CY7C4241
CY7C4251
CY7C4421
IDT722X1
nl26
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MC14038
Abstract: mc14032
Text: MC14032B MC14038B M O T O R O L A ^ TRIPLE SERIAL ADDERS The M C 140 32B and M C 1 4 0 3 8 B trip le serial adders have the clock and carry reset inputs com m on to all three adders. T h e carry is added on the positive-going clock transition fo r the M C 1 4 0 3 2 B , and
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MC14032B
MC14038B
MC14038
mc14032
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SN74F191
Abstract: CTRDIV16 F3002 SN54F191A SN74F191A SDFS059
Text: SDFS059 SN54F191A, SN74F191A SYCH RO N O U S 4-BIT UP/DOWN BINARY CO U N TERS WITH R E S E T AND R IP P LE C LO C K _ SCF3002 - DXXXX. JANUARY 1991 High Speed fMAX of 125 MHz Typical SN54F191A . . . J PACKAGE SN74F101A . . . D OR N PACKAGE
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SDFS059
SN54F191
SN74F191A
F3002
300-mll
SN54F191A
SN74F101A
F191A
SN74F191
CTRDIV16
SN54F191A
SN74F191A
SDFS059
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Fairchild TTL
Abstract: No abstract text available
Text: TTL MEMORY 93407 •93433 16-BIT COINCIDENT SELECT READ/WRITE MEMORY FO RM ER LY 5033 »9033 1 l ! . a / D E S C R IP T IO N — These devices are Planar* epitaxial integrated 16-bit, bit-o r.en ted , non-destructive readout m em ory cells, com patible w ith F a irch ild T T L . These m em ory cells, organized as 16 w ords by
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16-BIT
16-bit,
16-bit
02T3014
Fairchild TTL
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Untitled
Abstract: No abstract text available
Text: TTL MEMORY 93407 • 93433 16-BIT COINCIDENT SELECT READ/WRITE MEMORY FO R M ERLY 5033 »9033 V1 I f\l* D E S C R IP T IO N — These devices are Planar* epitaxial integrated 16-bit, bil-oriented, non destructive readout m emory cells, com patible w ith F a irch ild T T L . These m emory cells, organized as 16 words by
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16-BIT
16-bit,
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triac tag 8518
Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference
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ATIC 112
Abstract: No abstract text available
Text: /Xune/\B LT1413 TECHNOLOGY Single Supply, Dual Precision O p A m p FCRTURCS D C SC RIPTIOn S in g le S u p p ly O p e ra tio n : The LT1413 is a low cost, upgraded version of Linear • Input Goes Below Ground ■ Output Sw ings to Ground Sinking Current Technology’s industry standard LT1013 dual, single su p
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280jnV
950kHz
LT1413
LT1413
LT1013
LM324,
LM358,
OP-221
ATIC 112
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RRH cl2
Abstract: BBU RRH
Text: MT4C4001 J L 1 MEG X 4 DRAM I^IICRDN DRAM 1 MEG x 4 DRAM DRAM STANDARD OR LOW POWER, EXTENDED REFRESH FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J L) • Industry-standard x4 pinout, timing, functions and packages
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MT4C4001
024-cycle
MT4C4001J)
128ms
MT4C4001J
20-Pin
RRH cl2
BBU RRH
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2N2625
Abstract: SFT308 SFT307 R107T 2SC100 65T1 PNP GE 2G302 2G395 2N2209 2SA204
Text: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,
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T0106
TE3904
2N914A
2N2272
300M5A
2SC100
10B705
300MA
2N2625
SFT308
SFT307
R107T
65T1 PNP GE
2G302
2G395
2N2209
2SA204
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2SC921
Abstract: BFS29P 2T85 2SD128 BF189 2SC622 2SD75 2SD128 transistor 2N784A a3t2222
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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T0106
TE3904
2N914A
2N2272
300M5A
2SC100
10B705
300MA
2SC921
BFS29P
2T85
2SD128
BF189
2SC622
2SD75
2SD128 transistor
2N784A
a3t2222
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 512K WIDE DRAM MT4C8512/3 L WIDE DRAM X 8 512K x 8 DRAM LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View OPTIONS • M ASKED W RITE Not available Available • Packages Plastic SOJ (400 mil) Plastic TSOP (400 mil) Plastic ZIP (375 mil)
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MT4C8512/3
28-Pin
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MIL-STD-863B
Abstract: ICL7650CSD
Text: JV W V X A JV X Chopper Stabilized Operational Amplifier . Features ♦ Improved 2nd Source See 3rd page tor “Maxim Advantage'“”). ♦ Lower Supply Current: 2.0 mA ♦ Low Offset Voltage: 1 fiV ♦ No Offset Voltage Trimming Needed ♦ High Gain, CMRR and PSRR (120 dB min)
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR IN C b? E D • blllSMH OGG'iflba 217 M M R N PRELIMINARY MICRON I M T4LC 1004J S 4M E Gx1 D R A M sevicoNSucroa inc . DRAM 4 MEG x 1 DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • Single +3.3V ±0.3V pow er supply • 1,024-cyd e refresh distributed across 16ms
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1004J(
024-cyd
1004J)
T4LC1004J
MT4LC1004J
MT4LC1004J
A0-A10
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hy 1418
Abstract: tetris skg50 KJU64241 NJU6424 NJU6424FC1 x1rz IEGT KU 607 VC saa 1049
Text: NJU6424 \ m f é H • « z 'n - 7 - p n ^ m Æ S Ü l f Ê L C D i l^ m h P v ^ - 7 y K v 7 y ¡j ^î /< s v t x NJU6424là, IO«T 3 'û<n K y h v h V -y ? 7. LCD £ I ^ -y ~/XMWi T 5 L C D 3 > h 0 - 7 K v 'f / 'i T , âK^x-v h 7 "v , -/' — ? C R f6 « @ K ,
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NJU6424
KJU64241Ã
9600fc
T-240Ã
at/50
JU6424
COM17
COM24
hy 1418
tetris
skg50
KJU64241
NJU6424FC1
x1rz
IEGT
KU 607 VC
saa 1049
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Untitled
Abstract: No abstract text available
Text: MT4C1664/5 L 64K X 16 DRAM I^ IIC R O N 64K x 16 DRAM DRAM LOW POWER EXTENDED REFRESH FEATURES • Industry standard x l6 pinouts, timing, functions and packages • High-perform ance, CM OS silicon-gate process • Single +5V ±10% power supply • All device pins are fully TTL compatible
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MT4C1664/5
MT4C1664
MT4C1665
225mW
125jxs
40-Pin
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