fet 547
Abstract: MA644 FA01219A 90 HYBRID 70 mhz rf power acp 100k
Text: MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC DESCRIPTION Unit:mm FA01219A is RF Hybrid IC designed for 0.8GHz band small size handheld radio. GND FEATURES • Low voltage 3.5V • High gain 22.5B • High efficiency 50% • High power 30.5dBm
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FA01219A
FA01219A
925MHz
fet 547
MA644
90 HYBRID 70 mhz rf power
acp 100k
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bq208x
Abstract: i2c protocol based real time clock control applic bq293 BQ29311PW
Text: bq29311 www.ti.com SLUS487D − DECEMBER 2001 − REVISED NOVEMBER 2003 THREEĆ AND FOURĆCELL LITHIUMĆION OR LITHIUMĆPOLYMER BATTERY PROTECTION IC FEATURES D 3- or 4-Cell Series Protection Control D Autonomous Overcurrent and Short Circuit Protection D Provides Individual Cell Voltages to Battery
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bq29311
SLUS487D
25-mA
BQ29400
bq208x
i2c protocol based real time clock control applic
bq293
BQ29311PW
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VR39
Abstract: t15a DIP42S LA7191N
Text: Ordering number: EN 5471 Monolithic Linear IC LA7191N Global VHS-format VCR Video Signal Processor Overview Package Dimensions unit: mm The LA7191N is a multi-format, single-chip video signal processing IC that supports TV systems around the world. 3025B-DIP42S
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LA7191N
LA7191N
3025B-DIP42S
LA7191N]
VR39
t15a
DIP42S
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OSD ic
Abstract: VR39
Text: Ordering number: EN 5471 Monolithic Linear IC LA7191N Global VHS-format VCR Video Signal Processor Overview Package Dimensions unit: mm The LA7191N is a multi-format, single-chip video signal processing IC that supports TV systems around the world. 3025B-DIP42S
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LA7191N
LA7191N
3025B-DIP42S
LA7191N]
OSD ic
VR39
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VR39
Abstract: DIP42S LA7191N
Text: Ordering number: EN 5471 Monolithic Linear IC LA7191N Global VHS-format VCR Video Signal Processor Overview Package Dimensions unit: mm The LA7191N is a multi-format, single-chip video signal processing IC that supports TV systems around the world. 3025B-DIP42S
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LA7191N
LA7191N
3025B-DIP42S
LA7191N]
VR39
DIP42S
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Untitled
Abstract: No abstract text available
Text: FSA9480 — USB 2.0 Accessory Switch Features Description The FSA9480 is a USB port accessory detector and 2 switch. The FSA9480 is fully controlled using I C and enables USB data, stereo and mono audio, video, microphone, and UART data to use a common
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FSA9480
FSA9480
CEA936-A
CEA-936-A
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Hitachi DSA00280
Abstract: capasitor 1.2 mf diode td3
Text: HA16163T Synchronous Phase Shift Full-Bridge Control IC ADE-204-073 Z Preliminary Rev.0 Aug. 2002 Features • High frequency operation; oscillator frequency = 2 MHz max. • Full-bridge phase-shift switching circuit with adjustable delay times • Integrated secondary synchronous rectification control with adjustable delay times
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HA16163T
ADE-204-073
TSSOP-20
Hitachi DSA00280
capasitor 1.2 mf
diode td3
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9085 d
Abstract: ic fet 547 fet 547 MA644 9415
Text: MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC DESCRIPTION small size handheld radio. FEATURES • Low voltage 3.5V • High gain 22.5B • High efficiency 50% • High power 30.5dBm APPLICATION PDC 0.8G Hz ABSOLUTE MAXIMUM RATINGS Tc Ratings
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FA01219A
ACP50
ACP100
Po--30
9085 d
ic fet 547
fet 547
MA644
9415
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Untitled
Abstract: No abstract text available
Text: LOW Ron DUAL FET AN ALO G GATE SPST CAG45A • ± 10V SIGNAL LEVELS AC OR DC 0.100 MIN. 0.020 M IN ~ | 0.023 0.015 • W O R K S D I R E C T L Y F R O M L O G IC • B R E A K BEFORE M A K E A C T IO N L O G IC 6 > - L O G IC G N D (5 - - ( 9 ) LO GIC LO G IC GN D
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CAG45A
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CD 294
Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package
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FLC167WF
FLC167WF
FCSI0598M200
CD 294
FLL357
348dB
FLL400IP-2
FLK102MH-14
hemt low noise die
Fujitsu GaAs FET Amplifier
FLK017XP
FLL120
fujitsu gaas fet
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Untitled
Abstract: No abstract text available
Text: LOW COST FET ANALOG GATE SPST +VL • M A X . Ro D IR EC T LY HIGH I r\n m FRO M m h ic c LO G IC N O ISE B R E A K B E F O R E ± 10V S I G N A L V CC TO—100 D 60 O H M W O RK S u ir^ u 00 LO G IC V|N iiv/ia/ii i m i t v ' IM M U N IT Y M A K E O utput
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O--100
140kH
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Untitled
Abstract: No abstract text available
Text: DUAL FET SWITCHES FOR ANALOG GATING D TO A CONVERSION • INTEGRATOR RESET TO-99 • ZERO O FFSET VO LTAGE • WORKS D IREC TLY FROM LOGIC • LOW POWER CONSUMPTION Typically 5mW per switch p h y s ic a l d im e n s io n s IN ACCORDANCE W ITH JEDEC TO S OUTLINE
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-50mV
10KS2
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Untitled
Abstract: No abstract text available
Text: GENERAL PURPOSE FET ANALOG GATE QUAD SPST • • • • • CAG 5 0 D CAG 5 0 T 6 0 O H M M A X . Ron W O R K S D I R E C T L Y F R O M LOG IC H IG H LO G IC NO ISE I M M U N I T Y BREAK BEFORE M A K E AC TIO N ± 10V S I G N A L L E V E L S AC OR DC M A X I M U M R A T IN G S
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motorola mt*n06e
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F SbE D b3ti7254 GDTGTlü 1 Order this data sheet by IRFZ44/D MOTOROLA l'T 73cM 3 S E M IC O N D U C T O R TECHNICAL DATA IR F Z 4 4 P o w e r F ie ld E f f e c t T r a n s i s t o r N-Channel Enhancement-Mode Silicon Gate TM OS This T M O S Pow er FET is designed for high voltage,
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b3ti7254
IRFZ44/D
IRFZ44
motorola mt*n06e
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IFRZ44
Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541
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2N3904
2N3906
2N4400
2N4401
2N4402
2N4403
2N5087
2NS088
2NS551
2N6S15
IFRZ44
IRFZ43
KA3842D
irf510 switch
TRANSISTOR MC7805CT
KA336Z
Transistor mc7812ct
high voltage pnp transistor 700v
IRFZ44 PNP
KS82C670N
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Hitachi 2SJ
Abstract: No abstract text available
Text: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching HITACHI ADE-208-547 Target specification 1st. Edition Features • Low on-resistance • Low drive current. • 4V gate drive devices. • High speed switching. R d s („ „ ) = 0.017Q typ.
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2SJ505
ADE-208-547
--25A,
Hitachi 2SJ
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MGF1907
Abstract: MGF1907A mgf1302 MGF1302 equivalent
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1907A TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1907A is a low noise GaAs FET with an N-channel Schottky gate,which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and
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MGF1907A
MGF1907A
MGF1302.
12GHz
30rnA
MGF1907
mgf1302
MGF1302 equivalent
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 5471 Monolithic Linear IC LA7191N Global VHS-format VCR Video Signal Processor Overview Package Dimensions unit: mm The LA7191N is a multi-format, single-chip video signal processing IC that supports TV systems around the world. 3025B-DIP42S
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LA7191N
LA7191N
3025B-DIP42S
7TT707fci
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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Untitled
Abstract: No abstract text available
Text: DYNAMIC SATURATION VOLTAGE — A DESIGNER’S COMPARISON By W arren Schultz Motorola Inc. Semiconductor Products Division Reprinted by Permission of POWERCONVERSION INTERNATIONAL, October 1983 Issue, Volume 9, Number 9. 1983 Intertec Communications Inc.
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10/isec
AR119/D
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e304 fet
Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that
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K28742
44449SILXHX
e304 fet
JFET TRANSISTOR REPLACEMENT GUIDE j201
bfq13
e420 dual jfet
JFET TIS88
Siliconix FET Design Catalog
E112 jfet
jfet e300
BFW10 JFET
2N3686
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