WS128N
Abstract: ba 555 nc 555 WS064 history of 555 PWA with 555 S29WS128N S29WS256N S29WS-N S29WS-P
Text: S29WS-N to S29WS-P Migration Migrating from the WS-N 110 nm to the WS-P (90 nm) Application Note Introduction The S29WS-N and S29WS-P flash family architectures are quite similar; however, migration from the S29WS-N to S29WS-P may require both hardware and software changes. This application note illuminates
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S29WS-N
S29WS-P
S29WS-P
S29WS-P.
WS128N
ba 555
nc 555
WS064
history of 555
PWA with 555
S29WS128N
S29WS256N
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Untitled
Abstract: No abstract text available
Text: Features • 2.65V to 3.3V Read/Write • Access Time – 90 ns • Sector Erase Architecture • • • • • • • • • • • – Sixty-three 32K Word 64K Byte Sectors with Individual Write Lockout – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
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1494D
10/00/xM
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AT49BV32XT
Abstract: No abstract text available
Text: Features • 2.65V to 3.3V Read/Write • Access Time – 90 ns • Sector Erase Architecture • • • • • • • • • • • – Sixty-three 32K Word 64K Byte Sectors with Individual Write Lockout – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
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1494C
09/00/xM
AT49BV32XT
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WS256N
Abstract: ws256n spansion 28F256L18 S29WS256N S29WS-N WS256 Spansion
Text: Intel to Spansion Migration Replacing Intel Devices with Spansion Devices Application Note by Bushra Haque Introduction Understanding the basic differences between Spansion and Intel devices provides greater insight about the kinds of compatibility issues to consider when using Spansion devices to replace Intel devices. This
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MX29SL402C
Abstract: Q0-Q15
Text: MX29SL402C T/B 4M-BIT [512K x 8 / 256K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 524,288 x 8 / 262,144 x 16 switchable • Boot Sector Architecture
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MX29SL402C
16K-Byte
32K-Byte
64K-Byte
100mA
Q0-Q15
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MX29SL800C
Abstract: MX29SL800CT Q0-Q15 SA10
Text: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture
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MX29SL800C
16K-Byte
32K-Byte
64K-Byte
100mA
MX29SL800CT
Q0-Q15
SA10
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PDF
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Untitled
Abstract: No abstract text available
Text: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture
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MX29SL800C
16K-Byte
32K-Byte
64K-Byte
100mA
su/17/2006
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PDF
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Untitled
Abstract: No abstract text available
Text: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture
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MX29SL800C
16K-Byte
32K-Byte
64K-Byte
100mA
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"TE 555"
Abstract: No abstract text available
Text: MX29SL800C T/B 8M-BIT [1M x 8 / 512K x 16] SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 1.65 to 2.2 volt for read, erase, and program operations • 1,048,576 x 8 / 524,288 x 16 switchable • Boot Sector Architecture
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MX29SL800C
16K-Byte
32K-Byte
64K-Byte
100mA
"TE 555"
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IC 555 architecture
Abstract: S29AL016D S29AL032D S29GL064A application note ic 555
Text: Migrating Between Boot & Uniform Sectored Flash Devices Application Note By Shiu Lee 1. Overview The purpose of this application note is to describe the software algorithm changes necessary to convert from a boot sectored Flash device to a uniform sectored Flash device or vice versa. Changes are required only for
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AM29BDD160GB65D
Abstract: Am29BDD160GB64C PQR080
Text: ADVANCE INFORMATION Am29BDD160G 16 Megabit 1 M x 16-bit/512 K x 32-Bit CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURE ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while
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Am29BDD160G
16-bit/512
32-Bit)
AM29BDD160GB65D
Am29BDD160GB64C
PQR080
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Untitled
Abstract: No abstract text available
Text: 1 nppon7 I CHEIIhCOWl MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS LXY f:W ! : : " b i'iiiiA b iÜ ÏV : : i ' “ -V : : 'O S 'S V fm m iv ¥j¥:5: lower Z downsized •N ew ly innovative electrolyle and internal architecture are employed •Endurance with ripple current: 105“C 2000 to 8000 hours
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10to63Vrfc
10OOuF
10Vdo
63Vdc
120Hz)
16X20
16X25
16X30
16X35
16X40
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29LL800T/Am29LL800B AMDZ1 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically
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Am29LL800T/Am29LL800B
8-Bit/524
16-Bit)
48-pin
29LV200â
LL800â
Am29LL800T
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Untitled
Abstract: No abstract text available
Text: G ' S f * MINIATURE aluminum e le c tro ly tic cap a citors ' •N e w ly innovative electrolyte and internal architecture are employed •Low est impedance at high frequency range • Endurance with ripple current: 105°C 2000 to 8000 hours •Solvent-proof type
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63Vdc
120Hz)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMDH Am29LV200T/Am29LV200B 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 3.0 Volt-only Sector Architecture Flash Mem ory DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation ■ — Embedded Erase algorithms autom atically preprogram and erase the entire chip or any
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Am29LV200T/Am29LV200B
8-Bit/131
16-Bit)
29LV200T/A
29LV200B
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY A M D * Am29LL800T/Am29LL800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically
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Am29LL800T/Am29LL800B
8-Bit/524
16-Bit)
48-pin
10000h,
04000h.
06000h.
30000h,
08000h.
40000h,
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29LL800
Abstract: L6BH
Text: P R E L IM IN A R Y Am29LL800T/Am29LL800B AMD£I 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically
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Am29LL800T/Am29LL800B
29LV200"
LL800"
Am29LL800T
29LL800
L6BH
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY — Am29LV200T/Am29LV200B A M D tl 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 3.0 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ ■ — Extended voltage range: 2.7 to 3.6 volt read and
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Am29LV200T/Am29LV200B
8-Bit/131
16-Bit)
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY — Am29LV200T/Am29LV200B A M D tl 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 3.0 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ ■ — Extended voltage range: 2.7 to 3.6 volt read and
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Am29LV200T/Am29LV200B
8-Bit/131
16-Bit)
perform90R
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29f800bb
Abstract: IC 555 architecture 29f800bb55 29F800BB-55
Text: AMD3 Am29F800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations
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Am29F800B
8-Bit/512
16-Bit)
Am29F800
29f800bb
IC 555 architecture
29f800bb55
29F800BB-55
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC \í M I C K OS V S T 32 Megabit FLASH EEPROM DP5Z2ME16Pn3 M S PRELIMINARY DESCRIPTION: The D P 5 Z 2 M E 1 6 P n 3 "S L C C " devices are a revolutionary n e w m em ory subsystem using Dense-Pac M icrosystem s' ceram ic Stackable Lead less C hip
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DP5Z2ME16Pn3
200ns
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29lv200
Abstract: AM29LV200BT-50R IC 555 architecture
Text: AMDJ1 Am29LV200B 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 2.7 to 3.6 volt read and w rite operations for battery-pow ered applications ■ ■ Top or bottom boot block configurations
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Am29LV200B
8-Bit/128
16-Bit)
29LV200
20-year
AM29LV200BT-50R
IC 555 architecture
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMD£I AmMCOXXA 2, 4, or 8 Megabyte 5.0 Volt-only Flash Miniature Card DISTINCTIVE CHARACTERISTICS • 2, 4, or 8 Mbytes of addressable Flash memory ■ 5.0 Volt-only, single power supply operation ■ Available in industrial temperature grade
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60-pad
100h10Bh.
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIM IN ARY AMD£I AmMCOXXA 2, 4, or 8 Megabyte 5.0 Volt-only Flash Miniature Card DISTINCTIVE CHARACTERISTICS • 2, 4, or 8 Mbytes of addressable Flash m em ory ■ 5.0 Volt-only, single power supply operation ■ Available in industrial tem perature grade
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60-pad
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