29LL800
Abstract: L6BH
Text: P R E L IM IN A R Y Am29LL800T/Am29LL800B AMD£I 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically
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OCR Scan
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Am29LL800T/Am29LL800B
29LV200"
LL800"
Am29LL800T
29LL800
L6BH
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29LL800T/Am29LL800B AMDZ1 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically
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OCR Scan
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Am29LL800T/Am29LL800B
8-Bit/524
16-Bit)
48-pin
29LV200â
LL800â
Am29LL800T
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY A M D * Am29LL800T/Am29LL800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically
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OCR Scan
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Am29LL800T/Am29LL800B
8-Bit/524
16-Bit)
48-pin
10000h,
04000h.
06000h.
30000h,
08000h.
40000h,
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PDF
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80000h8
Abstract: No abstract text available
Text: P R E L IM IN A R Y Am29 LL800T/Am29 LL800B A M D tl 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically
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OCR Scan
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LL800T/Am29
LL800B
Am29LL800B
10000h,
20000h,
06000h.
30000h,
08000h.
40000h,
10OOOh.
80000h8
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PDF
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