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    IC 3A Search Results

    IC 3A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
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    IC 3A Price and Stock

    Japan Aviation Electronics Industry Limited FI-C3-A1-15000

    CONN SOCKET 28-32AWG CRIMP GOLD
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    DigiKey FI-C3-A1-15000 Cut Tape 327,537 1
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    • 1000 $0.05488
    • 10000 $0.05059
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    FI-C3-A1-15000 Reel 326,600 15,000
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    Chip1Stop FI-C3-A1-15000 Cut Tape 10,839
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    • 100 $0.0412
    • 1000 $0.0348
    • 10000 $0.034
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    Japan Aviation Electronics Industry Limited C2777-FI-C3-A1-AWG30-300

    CRIMPED WIRE AWG30 300MM
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    DigiKey C2777-FI-C3-A1-AWG30-300 Bulk 273 1
    • 1 $1.5
    • 10 $1.224
    • 100 $0.998
    • 1000 $0.81365
    • 10000 $0.73819
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    IndustrialSupplies.com PSM1412-IC3AKIT

    POLYPROPYLENE STRAPPING MACHINE
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    DigiKey PSM1412-IC3AKIT Bulk 9 1
    • 1 $1492.58
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    • 100 $1492.58
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    Japan Aviation Electronics Industry Limited FI-C3-A2-15000

    CONN SOCKET 28-32AWG CRIMP GOLD
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    DigiKey FI-C3-A2-15000 Reel 15,000
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    Microchip Technology Inc dsPIC33AK128MC105-I/PT

    Digital Signal Processors & Controllers - DSP, DSC dsPIC33A, FPU, 200MHz, 128K Flash, 16K RAM, MC-PWM, 12-bit ADCs, Op Amps, Comp.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics dsPIC33AK128MC105-I/PT 747
    • 1 $2.25
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    Find more IC 3A price and stock on Findchips.com

    IC 3A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT788B ISSUE 3 - OCTOBER 1995 FEATURES * Low equivalent on-resistance; RCE sat 93mΩ at 3A * Gain of 300 at IC=2 Amps and Very low saturation voltage 1.8 IC/IB=200 IC/IB=100 IC/IB=10 1.8 Tamb=25°C


    Original     		PDF OT223 FZT788B FZT688B 100ms

    2SC4130

    Abstract: FM20 transistor+2sC4130
    Text: 2SC4130 Silicon NPN Epitaxial Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=3A 10 to 30 16.9±0.3 100max IC=25mA IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.3max V Tj


    Original     		PDF 2SC4130 Pulse14) 100max 400min 15typ 50typ O220F) 2SC4130 FM20 transistor+2sC4130

    2SD2141 equivalent

    Abstract: 2SD2141 FM20 DMS-10
    Text: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA


    Original     		PDF 2SD2141 Pulse10) 10max 20max 1500min 20typ 95typ O220F) 120mA 2SD2141 equivalent 2SD2141 FM20 DMS-10

    2SD1796

    Abstract: relay 12v 3a datasheet FM20
    Text: 2SD1796 Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor IC 4 A hFE 10max mA VEB=6V IC=10mA 60±10 VCE=4V, IC=3A 2000min V 0.5 A VCE sat IC=3A, IB=10mA 1.5max V PC 25(Tc=25°C) W fT VCE=12V, IE=–0.2A


    Original     		PDF 2SD1796 2000min 60typ 150x150x2 50x50x2 2SD1796 relay 12v 3a datasheet FM20

    STK392-110

    Abstract: STK392-040 stk392 210 stk*392-110 STK392-220 STK392-010 STK392_110 ENN5170 51704
    Text: Ordering number:ENN5170 Thick Film Hybrid IC STK392-110 3-Channel Convergence Correction Circuit IC max = 3A Overview Package Dimensions The STK392-110 is a convergence correction circuit IC for video projectors. It incorporates three output amplifiers in


    Original     		PDF ENN5170 STK392-110 STK392-110 STK392-010, STK392-110] STK392-040 stk392 210 stk*392-110 STK392-220 STK392-010 STK392_110 ENN5170 51704

    Sanyo

    Abstract: No abstract text available
    Text: Ordering number:ENN5170 Thick Film Hybrid IC STK392-110 3-Channel Convergence Correction Circuit IC max = 3A Overview Package Dimensions The STK392-110 is a convergence correction circuit IC for video projectors. It incorporates three output amplifiers in


    Original     		PDF ENN5170 STK392-110 STK392-110 STK392-010, STK392-110] Sanyo

    TPT5609

    Abstract: SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A
    Text: MCC TM Micro Commercial Components SMALL SIGNAL &POWER TRANSISTORS VCEO Part No hFE @ VCE & IC IC Polarity VCE sat & VBE(sat) @ IC & IB fT @ VCE & IC VCE IC VCE(sat) VBE(sat) IC IB fT Min. fT Max. VCE IC hFE hFE Max. (V) (mA) Max.(V) Max.(V) (mA) (mA) (MHz)


    Original     		PDF 2N3904 2N3906 2N4124 2N4400 2N4401 2N4402 2N4403 2N5401 2N5551 2N6517 TPT5609 SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A

    2sc3835

    Abstract: No abstract text available
    Text: 2SC3835 Silicon NPN Triple Diffused Planar Transistor Switching Transistor 100max µA V IEBO VEB=8V 100max µA V V V(BR)CEO IC=50mA 120min 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A


    Original     		PDF 2SC3835 100max 120min Pulse14) 30typ 110typ MT-100 2sc3835

    2SC4468

    Abstract: 2SA1695
    Text: 2SC4468 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1695 10max µA V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 10 A hFE 140min IC=50mA V 50min∗ VCE=4V, IC=3A A VCE(sat) IC=5A, IB=0.5A 0.5max V 100(Tc=25°C) W fT VCE=12V, IE=–0.5A


    Original     		PDF 2SC4468 2SA1695) MT-100 10max 140min 50min 20typ 250typ to100) 2SC4468 2SA1695

    2SC3835

    Abstract: DSA0016507
    Text: 2SC3835 Silicon NPN Triple Diffused Planar Transistor Switching Transistor µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max


    Original     		PDF 2SC3835 100max 120min Pulse14) 30typ 110typ MT-100 2SC3835 DSA0016507

    2SD2014

    Abstract: 2SB1257 FM20 S8010
    Text: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA


    Original     		PDF 2SD2014 2SB1257) O220F) 2000min 10max 80min 75typ 45typ 150x150x2 2SD2014 2SB1257 FM20 S8010

    2SC3890

    Abstract: FM20
    Text: 2SC3890 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=3A 10 to 30 IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A


    Original     		PDF 2SC3890 100max 400min Pulse14) 10typ 50typ O220F) 2SC3890 FM20

    2SC4467

    Abstract: transistor 2SC4467 2SA1694
    Text: 2SC4467 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1694 2SC4467 Unit ICBO VCB=160V 10max µA VCEO 120 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 8 A hFE 120min IC=50mA V VCE=4V, IC=3A 50min∗ 19.9±0.3 Symbol A VCE(sat) IC=3A, IB=0.3A


    Original     		PDF 2SC4467 2SA1694) MT-100 10max 50min 20typ 200typ 100ms 2SC4467 transistor 2SC4467 2SA1694

    2SD2141

    Abstract: 2SD2141 equivalent FM20 DMS-10
    Text: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA


    Original     		PDF 2SD2141 Pulse10) 10max 20max 1500min 20typ 95typ O220F) 150x150x2 100x100x2 2SD2141 2SD2141 equivalent FM20 DMS-10

    2SD2014

    Abstract: 2SB1257 FM20
    Text: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA


    Original     		PDF 2SD2014 2SB1257) O220F) 2000min 10max 80min 75typ 45typ 2SD2014 2SB1257 FM20

    2SC3856

    Abstract: transistor 2sc3856 power transistor 2sc3856 2SA1492
    Text: 2SC3856 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1492 Conditions 2SC3856 Unit V ICBO VCB=200V 100max µA VCEO 180 V IEBO VEB=6V 100max µA IC=50mA 180min V 6 V V(BR)CEO IC 15 A hFE VCE=4V, IC=3A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A


    Original     		PDF 2SC3856 2SA1492) MT-100 100max 180min 50min 20typ 300typ 2SC3856 transistor 2sc3856 power transistor 2sc3856 2SA1492

    2SC3680

    Abstract: No abstract text available
    Text: 2SC3680 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor V IEBO VEB=7V 100max µA V V V(BR)CEO IC=10mA 800min 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 IB 3.5 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A


    Original     		PDF 2SC3680 100max 800min Pulse14) 105typ MT-100 2SC3680

    2SC3834

    Abstract: transistor 1022
    Text: 2SC3834 Silicon NPN Triple Diffused Planar Transistor Switching Transistor 100max µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A


    Original     		PDF 2SC3834 100max 120min Pulse14) 30typ 110typ MT-25 2SC3834 transistor 1022

    2SD2045

    Abstract: No abstract text available
    Text: 2SD2045 Silicon NPN Triple Diffused Planar Transistor VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V BR CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max


    Original     		PDF 2SD2045 10max 120min Pulse10) 2000min 50typ 70typ 2SD2045

    2SD2045

    Abstract: No abstract text available
    Text: 2SD2045 Silicon NPN Triple Diffused Planar Transistor VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V BR CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max


    Original     		PDF 2SD2045 10max 120min Pulse10) 2000min 50typ 70typ 2SD2045

    U20 diode sm

    Abstract: C181-C187 C69 diode sm RMC 0805 1.2M C159C Motorola R97 P13B3125Q PTC111 IC 93c46 bcr beckman resistor
    Text: 0700F _BoM Location QTY Part Descripition U21 IC/SM 74LVC04AD SOIC14 3.3V 1 U4 IC/SM 74LVC08 3.3V TSSOP-14 2 U22 IC/SM 74LVC14 3.3V TSSOP-14 1 U7,U8 IC/SM 74LVTH273 TSSOP-20 3.3V 2 U14,U15 IC/SM 74LVC573 SOIC20 No Bus H 2 U3 IC/SM 74C32 TSSOP-14 1 U27 IC/SM 3.3V Quad Switch(QSOP16)


    Original     		PDF 0700F 74LVC04AD SOIC14 74LVC08 TSSOP-14 74LVC14 74LVTH273 TSSOP-20 74LVC573 U20 diode sm C181-C187 C69 diode sm RMC 0805 1.2M C159C Motorola R97 P13B3125Q PTC111 IC 93c46 bcr beckman resistor

    MMS8050-L

    Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
    Text: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.


    Original     		PDF MJD31C MJD32C MJD42C MMJD2955 MMJD3055 MMS8050-L 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664

    lf817

    Abstract: pnp 8 transistor array pnp array SLA8004 1/stv 9902
    Text: Power Transistor Array SLA8004 Tj Tstg ICBO IEBO VCEO hFE VCE sat VFEC Ratings VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max Test Conditions Ratings VCB = –55V –100max VEB = –6V


    Original     		PDF SLA8004 100max 60max 60min 150min 35max 55min 80min lf817 pnp 8 transistor array pnp array SLA8004 1/stv 9902

    KTA1243

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTA1243 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. B C FEATURES A ᴌhFE=100ᴕ320 VCE=-2V, IC=-0.5A . ᴌhFE=70(Min.) (VCE=-2V, IC=-4A). ᴌLow Collector Saturation Voltage. N E K : VCE(sat)=-0.5V (IC=-3A, IB=-75mA).


    Original     		PDF KTA1243 -75mA) -150mA KTA1243