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    IB08 Price and Stock

    Traco Power TIB-080-124EX

    AC/DC DIN RAIL SUPPLY 24V 82W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TIB-080-124EX Box 116 1
    • 1 $101
    • 10 $100.662
    • 100 $100.662
    • 1000 $100.662
    • 10000 $100.662
    		Buy Now

    Traco Power TIB-080-124

    AC/DC DIN RAIL SUPPLY 24V 82W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TIB-080-124 Box 30 1
    • 1 $91.2
    • 10 $90.8
    • 100 $90.8
    • 1000 $90.8
    • 10000 $90.8
    		Buy Now

    Traco Power TIB-080-148

    AC/DC DIN RAIL SUPPLY 48V 82W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TIB-080-148 Box 25 1
    • 1 $104.9
    • 10 $104.55
    • 100 $104.55
    • 1000 $104.55
    • 10000 $104.55
    		Buy Now

    Amphenol Times Microwave Systems IB086-SMSM-12.0IN

    COAX CBL SMA TO SMA 12"
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IB086-SMSM-12.0IN Bag 20 1
    • 1 $62.9
    • 10 $53.461
    • 100 $45.4507
    • 1000 $45.4507
    • 10000 $45.4507
    		Buy Now

    Traco Power TIB-080-112

    AC/DC DIN RAIL SUPPLY 12V 80W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TIB-080-112 Box 15 1
    • 1 $103.7
    • 10 $103.375
    • 100 $103.375
    • 1000 $103.375
    • 10000 $103.375
    		Buy Now
    Find more IB08 price and stock on Findchips.com

    IB08 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IB08-ALDG2J Shanghai Runan Industrial Sensors Inductive Proximity Switch Original PDF

    IB08 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB0810M100 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M100 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C mode at Vcc=36V,


    Original     		IB0810M100 IB0810M100 IB0810M100-REV-NC-DS-REV-A PDF

    transistor Common Base configuration

    Abstract: IB0810M50 IB0810M12 f 0952 radar circuit component transistor Common collector configuration ballast 300 watt Transistor Data Book
    Text: Part Number: Integra IB0810M12 TECHNOLOGIES, INC. 12 Watt L-Band Radar Transistor Frequency : Output Power : Power Gain : Efficiency : Output VSWR : Pulse Width : Duty Factor : Collector Voltage : Driver Transistor Use as driver transistor IB0810M50. for Bandwidth


    Original     		IB0810M12 IB0810M50. IB0810M12-SF-REV-NC transistor Common Base configuration IB0810M50 IB0810M12 f 0952 radar circuit component transistor Common collector configuration ballast 300 watt Transistor Data Book PDF

    IB0810M12

    Abstract: transistor Common Base configuration IB0810M12-REV-NC-DS-REV-NC method d 1071 transistor BD 325 bd 142 transistor 4620 Common collector configuration BD 54 transistor IB0810M
    Text: Part Number: Integra IB0810M12 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M12 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C


    Original     		IB0810M12 IB0810M12 IB0810M12-REV-NC-DS-REV-NC transistor Common Base configuration IB0810M12-REV-NC-DS-REV-NC method d 1071 transistor BD 325 bd 142 transistor 4620 Common collector configuration BD 54 transistor IB0810M PDF

    bd 142 transistor

    Abstract: No abstract text available
    Text: Part Number: Integra IB0810M12 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB0810M12 is designed for L-Band radar systems operating over the instantaneous


    Original     		IB0810M12 IB0810M12 IB0810M12-REV-NC-DS-REV-A bd 142 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IB0810M50 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB0810M50 is designed for L-Band radar systems operating


    Original     		IB0810M50 IB0810M50 IB0810M50-REV-NC-DS-REV-A PDF

    IB0810M100

    Abstract: l-band 60 watt transistor x band radar U 855 D nc50
    Text: Part Number: Integra IB0810M100 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M100 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C mode at Vcc=36V,


    Original     		IB0810M100 IB0810M100 IB0810M100-REV-NC-DS-REV-NC l-band 60 watt transistor x band radar U 855 D nc50 PDF

    Untitled

    Abstract: No abstract text available
    Text: 传感器|上海闰安工业传感器有限公司 页码 1/1 电感式接近开关 标准外型尺寸mm 产品序列号 IB08 标准距离Sn(mm) 具 NPN 常开 IB08-BNZ1J NPN 常闭 IB08-ANZ1J NPN 常开+常闭 IB08-BANZ1J DC PNP 常开 IB08-BPZ1J 型 PNP 常闭


    Original     		IB08-ANZ1J IB08-BANZ1J IB08-BPZ1J IB08-APZ1J IB08-BAPZ1J IB08-BLZ1J IB08-ALPZ1J IB08-BL IB08-AL IB08-BNZ1J PDF

    bd 36 930

    Abstract: No abstract text available
    Text: Integra Part Number: IB0810M210 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT IB0810M210 is designed for L-Band radar systems operating over the instantaneous band width of 870-990 MHz. While operating in class C mode this common base device supplies a


    Original     		IB0810M210 IB0810M210 IB0810M210-REV-NC-DS-REV-B bd 36 930 PDF

    tegra 2

    Abstract: IB0810M210 tegra BD 9280 CI 321 sar radar INTEGRA TECHNOLOGIES transistor BD 255
    Text: Part Number: Integra IB0810M210 TECHNOLOGIES, INC. L-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB0810M210 is designed for L-Band radar systems operating over the instantaneous bandwidth of 870-990 MHz. While operating in class C


    Original     		IB0810M210 IB0810M210 IB0810M210-REV-NC-DS-REV-A tegra 2 tegra BD 9280 CI 321 sar radar INTEGRA TECHNOLOGIES transistor BD 255 PDF

    1B10M

    Abstract: IB08S 1B005S 1B02S 1B04S 1B06S
    Text: Illl B S E In t e r n a t i o n a l R e c t i f i e r Bridges Part Number VRRM V l0«Tc (A) X Tj = 25°C (V) (A) >FSM(2) 50Hz 60Hz (A) (3) IRM (fA) RthJC K/W Notes Fax-onDemand Case Style, (CaseOutline) Numbet (1) Single Phase Diode DF005S DF01S DF02S DF04S


    OCR Scan     		DF005S DF01S DF02S DF04S DF06S DF08S DF10S DF005M DF01M DF02M 1B10M IB08S 1B005S 1B02S 1B04S 1B06S PDF

    smd marking KD

    Abstract: smd p08 bus13r marking h06 TL 8H3 IB08 IC01 Replace
    Text: MIL-H-38510/620 21 D ecember MILITARY I9<3i SPECIFICATION MICR O C I R C U I T S , DIGITAL, VHSIC, CMOS, SIGNAL PROCESSING ELEMENT, MONOLITHIC SILICON This specification m e nts and A g e n c i e s 1. 1s of a p p r o v e d f o r u s e by all D e p a r t ­


    OCR Scan     		MIL-H-38510/620 smd marking KD smd p08 bus13r marking h06 TL 8H3 IB08 IC01 Replace PDF

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


    Original     		RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode PDF

    MPF102 spice model

    Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
    Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for


    Original     		te121 MPF102 spice model BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H PDF

    A27A

    Abstract: No abstract text available
    Text: I CONNECTOR I ENG NO. EDP NO. 784 I-A04B 015-05-8046 .098/ 2.49 CKTS 04 05 784 I-A06B 015-05-8066 06 784 I-A07B 015-05-8076 07 .617 (15.67) .715 (18.16) 08 784 I-A09B 015-05-8096 09 784 I-AI0B 015-05-8106 10 .813 (20.65) .912 (23.16) 1.010 (25.65) 784 l-A 1IB


    OCR Scan     		I-A04B I-A05B I-A06B I-A07B I-A08B I-A09B I-A20B 784I-A2IB I-A22B I-A23B A27A PDF

    mitsubishi plc FX SERIES connection cable

    Abstract: mitsubishi plc FX2N SERIES mitsubishi FX series instruction list FX-232CAB-1 mitsubishi plc FX SERIES JY992D88101 mitsubishi plc cable q series beijer hmi cables mitsubishi plc cable fx series FX-232AW
    Text: SOFTWARE SETUP MANUAL GX Developer-FX FX Series Programmable Controllers Foreword • This manual contains text, diagrams and explanations which will guide the reader in the correct installation and operation of the GX Developer-FX software. It should be read and


    Original     		JY992D88301A MEE0006) J24532 mitsubishi plc FX SERIES connection cable mitsubishi plc FX2N SERIES mitsubishi FX series instruction list FX-232CAB-1 mitsubishi plc FX SERIES JY992D88101 mitsubishi plc cable q series beijer hmi cables mitsubishi plc cable fx series FX-232AW PDF

    R40 P1F

    Abstract: r35 p1f USBN9602 UP10P10 Z9035912GSE EPROM 40PIN Firmware ir 8500 cross AM29F010 R28 P1F RXE160
    Text: Z9036900 Emulator User Manual UM001900-TVC0699 Electrical Safeguards WARNING! Follow the precautions listed below to avoid permanent damage to the emulator. I. Always use a grounding strap to prevent damage resulting from electrostatic discharge ESD . II. Power-Up Precautions.


    Original     		Z9036900 UM001900-TVC0699 PWM10 Z8930912GSE 124-PGA 96C0612-001 R40 P1F r35 p1f USBN9602 UP10P10 Z9035912GSE EPROM 40PIN Firmware ir 8500 cross AM29F010 R28 P1F RXE160 PDF

    sot-89 BV SMD TRANSISTOR MARKING CODE

    Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
    Text: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ


    Original     		NXPRF14 JESD204A AEC100 RFBFR90 RFBFQ33 TFF1004HN FMF11070HN sot-89 BV SMD TRANSISTOR MARKING CODE bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer PDF

    circuit diagram of GSM based home automation system

    Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
    Text: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    melsec manual

    Abstract: Melsec GPP Melsec SW1D* mitsubishi melsec manuals SW05C a series mitsubishi melsec FLOPPY DISK MITSUBISHI CD-ROM diagram ladder logic
    Text: REVISIONS The manual number is given on the bottom left of the back cover. Print Date May, 1999 Manual Number Revision IB NA -0800030-A First edition This manual confers no industrial property rights or any rights of any other kind, nor does it confer any patent licenses.


    Original     		-0800030-A SW05C-GPPW melsec manual Melsec GPP Melsec SW1D* mitsubishi melsec manuals SW05C a series mitsubishi melsec FLOPPY DISK MITSUBISHI CD-ROM diagram ladder logic PDF