IB 27C Search Results

hcl laptop MOTHERBOARD CIRCUIT diagram

Abstract: uPC 577H 945 gl MOTHERBOARD CIRCUIT diagram dg 41 wv motherboard BLR MQ 06 tsr 002 triac wg 8 s 82C735 oma4 marking WMG
Contextual Info: îb ib n n n -R !” 82C735 I/O Peripheral Controllers With Printgine Parallel Port—Printgine" Floppy Disk Controller • Single-chip floppy solution ■ Software compatible with NEC 765B and Intel 82077 ■ Perpendicular recording support B 48mA disk drivers and Schmitt-trigger inputs

lrr3 bosch

Abstract: 92cw53 mv20 cecl 080 TMP94FD53F CECL 006 D32 7BI mb8l mcl sbl 1 9AN1
Contextual Info: TO S H IB A Preliminary TMP92CW53F TMP94FD53F Specification Revision 1.6 23 March 2001 History Revision 1.0 1.1 1.2 1.3 Date 29 Apr. 2000 31 M ay 2000 5 July 2000 31 Aug. 2000 1.4 1.5 1.6 20 Sep. 2000 17 Nov. 2000 23 Mar. 2001 Note Initial draft A m istake correction

tmp96c141

Abstract: PC 1278H 2001H TLCS-900
Contextual Info: T O S H IB A TLCS-900 JP condition, dst < Jum p > Operation : If cc is true, then PC < - dst. Description : If the operand condition is true, jumps to the program address specified by dst. Details F lags Mnemonic : S S Z H V N C JP #16 JP #24 JP [cc,] mem

Contextual Info: T O S H IB A TLMM527A1U TO SH IBA LED D O T M A T R IX M O D U LE TLMM527A1 U 1. FEATURES • • • • • 2. Thin-size and light weight High-speed operation-30MHz Superior radiation characteristics Display function equivalent to CRT of a personal computer with a simple interface

PC 1278H

Abstract: 123AH 00123457H
Contextual Info: TO SH IB A TLCS-900/H CPU HALT < H alt CPU > Operation : CPU halt Description : H alts the instruction execution. To resume, an interrupt m ust de received. Details : Mnemonic HALT Flags : S S Z H V N C Z H V N = = = = = = Code 0|0|0|0|0|1|0|1 C No change

whn 316

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS n x c k ic o n Miniature S zed VR Approved by Reliability Center ter Electronic Component. Japan-Certlflcaticn No. RCJ-Q3-22C series VZ Ib t i One rank sma er case sze s than VX series. VR VK IS p e d fi cations P e r i o r m a r l e C rv a ra c te rH C c s

LG color tv Circuit Diagram schematics

Abstract: MD 1803 FX MN102L35G 27C202 eprom 711S SERVICE MANUAL Panasonic Panasonic color television schematic diagram ls010 lg led tv internal parts block diagram LG 631 TV LG
Contextual Info: P a n iB r i n g i n g a X S ‘l o m o T r o z v MICROCOMPUTER MN102L35G LSI User Manual Ver. 2.20 March 6, 1998 Panasonic • ^ 3 2 6 5 2 0016705 273 ■ This Material Copyrighted By Its Respective Manufacturer e rie s t o ‘T o d a y Restrictions and Warnings Regarding the Use of the Technical Data and the

diode lt 8220

Abstract: diode LT 8233 Monsanto segment display lt 8242 6e2 tube Signetics NE561B Signetics NE561 R/diode lt 8232 lt 8232
Contextual Info: Copyright 1974 SIGNETICS CORPORATION Signetics C o rp o ra tio n reserves th e rig h t to m ake changes in th e pro d u c ts contained in th is b o o k in order to im prove design o r perform ance and to supp ly the best possible p ro d u c t. Signetics C o rp o ra tio n assumes no re sp o n s ib ility fo r the use o f any c irc u its described herein and

TMP94FD53IF

Abstract: bosch ecu 0 261 200 100 connection diagram TFK E 1024 xz 117 sb900 bosch MA 3.1 ecu tt 4458 IRFP11 TMP94F
Contextual Info: TO S H IB A TMP92CW53IF/TMP92CU53IF TMP94FD53IF Specification Revision 1.8 18 Apr 2002 H istory R e visio n D ate N ote 1.0 29 A p r. 2 0 0 0 In itial d ra ft 1.1 1.2 31 M a v 2 0 0 0 5 J u ly 2 0 0 0 31 A u g . 2 0 0 0 A m is ta k e c o rre c tio n A d d itio n 3 .3 F la sh M e m o ry , 3 .4 S in g le B o o t M o d e T M P 9 4 F D 5 3 F

W65C134

Abstract: ph62 PH61 ph63 PH62 16 ph61 16 LD52 LD48 ld53 62C256
Contextual Info: 6 5 4 3 2 1 REVISI ON RECORD L TR E C O NO: APPROVED: DATE: VCC_ARROW 2 VCC_ARROW J 12 1 J U MPER1 C8 C C7 C C6 C C5 C C4 C C3 C C2 C D[0:7] J9 D EN OUT 8 OSC14A JP1 4 2 2 4 JP2 1 3 J U MPER2 3 1 A [00:23] U7 27C256 A 00 A 01 A 02 A 03 A 04 A 05 A 06 A 07

2N2937

Abstract: 27c03 sp2639 2n760A Jan 2N2453 2N2903A 2N757 2N759AJ 2n2915 203 2n2484
Contextual Info: RAYTHEON/ "ä ? SEMICONDUCTOR 7597360 D eT | 7 5 ^ 7 3 ^ 0 G G D B S a S Ì 27C RAYTHEON CO» D Low Level, Low Noise, High Gain Amplifiers RAYTHEON CL 0353 5 SMALL SIGNAL TRANSISTORS PRODUCT SPECIFICATIONS NPN Popular Types Description General purpose am plifier for low

D27C64

Abstract: intel D27c64 rt 7257 NEC D27C64 ha 11747 D27C64 intel nec A2C 71454 upd27c64
Contextual Info: ì ; SEC OM ,y NEC Electronics Inc. 006074 Pin C onfiguration A d is tin c tiv e fe atu re o f the ¿/PD27C64 is an o u tp u t enable OE separate fro m the c h ip enable (CE). The OE c o n tro l elim ina tes bus c o n te n tio n in m u ltip le -b u s m icro p ro c e s s o r systems. The//P D 27C 6 4 features fast,

msm27c402zb

Contextual Info: O K I Semiconductor MSM27C402ZB : 262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM D E S C R IP TIO N Jlo^nrS^ 27C4<!2f BJ l a 4 Mb CleCtriCally Programmable Read-Only Memory whose configuration can be o n e rlli f d between 262' 144 w ords x 16 bits and 524,288 w ords x 8 bits. The MSM27C402ZB

VF9-VF10

Abstract: 3032B oscillator VF5 LA6358M
Contextual Info: SANYO SEMICONDUCTOR CORP 1SE I _ _ d T| 7 T c] 7 D ? t j DDG3177 . “ LA6358M Monolithic Linear 1C 3032B High-Performance Dual Operational Amplifier Ü 27C The LA6358M consists of two independent, high-performance, internally phase compensated operational amplifiers

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8838A Power GaAs FETs Chip Form Features • High power - P-idB = 33.5 dBm at f = 8 GHz • High gain - G 1dB = 5.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. 27CX321 /27CX322 4,096 X 8-bit CMOS High-Speed Erasable PROM Features Reprogrammablllty Advanced CMOS EPROM Technology — Adds convenience, reduces costs — Windowed package for UV erasure — Allows 100% factory testing

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8838A Power GaAs FETs Chip Form Features • High power - P idB = 33.5 dBm at f = 8 GHz • High gain - G idB = 5.5 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8836A Power GaAs FETs Chip Form Features • High power - P idB = 29.5 dBm at f = 8 GHz • High gain - G 1dB = 7.5 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)

S8837A

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8837A Power GaAs FETs Chip Form Features • High power - P idB = 32 dBm at f = 8 GHz • High gain - G 1dB = 7 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)

M27C1024

Abstract: PLCC44 Q0-Q15
Contextual Info: iiLiisinsMQes SGS-THOMSON M 27C 1024 1 Mb 64K x 16 UV EPROM and OTP EPROM • 5 V ± 1 0 % SUPPLY VOLTAGE in READ OPERATION ■ FAST ACCESS TIME: 35ns ■ LOW POWER CONSUMPTION: - Active Current 35mA - Standby Current IOOjiA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

MSM27C802ZB

Contextual Info: O K I Semiconductor MSM27C802ZB 524,288-W ord x 16-Bit o r 1,048,576-W ord x 8-Bit O ne T im e PRO M D ESCR IPTIO N The M SM 27C802ZB is an 8 Mb electrically Program mable Read-Only M em ory whose configuration can be electrically switched betw een 524,288 words x 16 bits and 1,048,576 words x 8 bits. The M SM 27C802ZB

Contextual Info: >*•« « a u D i a n a l 9 IS M 5M 27C401K-12, -15 4 1 9 4 3 0 4 - B IT 5 2 4 2 8 8 - W 0 R D BY 8 -B IT CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM DESCRIPTION The Mitsubishi M 5 M 2 7 C 4 0 1 K is a high-speed 4 1 9 4 3 0 4 -b it ultraviolet erasable and electrically reprogrammable read

intel 27c512 eprom

Abstract: 27C512-200V10 i27C512 d27c512 27C512-120V10 I27C256 intel 27c512 29022 27C512-1 27C512-2
Contextual Info: INTEL CORP MEMORY/LOGIC 50E D • 4fl2hl7b GObböOH *4 ■ In te l' T -V L -lS -tS 27C512 *T“-V6-/3 -29 512K (64K x 8) CHMOS PRODUCTION AND UV ERASABLE PROMS ■ Software Carrier Capability ■ 120 ns Access Time ■ Two-Line Control ■ Inteligent identifier Mode

27c1000

Contextual Info: E i. SCS-TTIOMSON M 27C 1000 ItLG 1024K 128K x 8 CMOS UV EPROM - OTP ROM INTERCHANGEABLE WITH 1M BIT MASKED ROM (ROM PIN OUT). VERY FAST ACCESS TIME : 120ns. COM PATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO W AIT STATE. LOW "CMOS" POWER COM SUMPTION :