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    S8838A Search Results

    S8838A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S8838A Toshiba MICROWAVE POWER GaAs FET Scan PDF

    S8838A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA S8838A MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 33.5 dBm at f = 8 GHz • High gain - G1dB = 5.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    Original     		PDF S8838A S8838A

    7400A

    Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
    Text: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8838A Power GaAs FETs Chip Form Features • High power - P idB = 33.5 dBm at f = 8 GHz • High gain - G idB = 5.5 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8838A S8838A

    S8838A

    Abstract: No abstract text available
    Text: TOSHIBA M IC R O W A VE POWER GaAs FE T S8838A MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES: • HIGH POWER = 3 3 .5 dBm at f = 8 GHz SUITABLE FOR C-BAND AMPLIFIER ■ HIGH GAIN J1dB = 5.5 dB at f = 8 GHz ION IMPLANTATION RF PERFO RM AN CE S P E C IF IC A T IO N S T a = 25°C


    OCR Scan     		PDF S8838A S8838A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8838A Power GaAs FETs Chip Form Features • High power - P-idB = 33.5 dBm at f = 8 GHz • High gain - G 1dB = 5.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8838A S8838A

    JS8834-AS

    Abstract: No abstract text available
    Text: Microwave Semiconductors Power GaAs FETs J10 Type No. Freq. Band GHz S8834 JS8834-AS S8835 JS8835-AS PicB Typ. GiteTyp. (dBm) (dB) Ids = Idss/2 nadd Typ. (%) Ftest (GHz ) Vos (V) 21 9 27 8 10 24 8 26 8 10 29.5 7.5 30 8 10 32 7 28 8 10 33.5 5.5 25 8 10 36


    OCR Scan     		PDF S8834 JS8834-AS S8835 JS8835-AS S8836A S8836B JS8836A-AS S8837A JS8837A-AS S8838A

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


    OCR Scan     		PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P