IAM TRANSISTOR Search Results

i8042

Abstract: IAM-81028 IAM-81008 I8082 i40220 I40420 AN-S013 IAM-82008 I80220 I80820
Contextual Info: AB-0013: SPICE Models for the IAM- 81 and IAM-82 Active Mixers Revised February, 1999 Introduction The IAM81 and IAM82 mixers are offered in a number of packages. IAM-81000 and IAM-82000 are chip form; IAM-81008 and IAM-82008 are SO-8 plastic packaged versions, and IAM-81028 and IAM-82028

active double balanced mixer

Abstract: 180MIL hic an005
Contextual Info: HEW LETT PACKARD IAM-81000 MagIC Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/IF Amplifer Chip Features • • • • • • • • IAM-81000 Chip Outline 8 dB RF-IF Conversion Gain From 0.05 to 5 GHz IF Output From DC to 1 GHz with Gain

IAM82018

Abstract: IAM-81018 gilbert cell differential pair IAM-82018 signal path designer Gilbert Cell
Contextual Info: IAM-8 Series Active Mixers Application Note S013 Introduction Hewlett-Packard’s IAM-8 products are Gilbert cell based double balanced active mixers capable of accepting RF inputs up to 5 GHz and producing IF outputs up to 2 GHz. They feature conversion gain, insensitivity to mismatch, and superior isolation in a very compact format.

IAM-81018

Abstract: IAM-82018 gilbert cell sum IAM-82 IAM-82028 IAM82018 IAM-81 IAM-81028 IAM-8-82028 59802-1
Contextual Info: IAM-8 Series Active Mixers Application Note S013 Introduction Agilent Technologies’ IAM-8 products are Gilbert cell based double balanced active mixers capable of accepting RF inputs up to 5 GHz and producing IF outputs up to 2 GHz. They feature conversion gain, insensitivity to mismatch, and superior isolation in a very compact format.

IAM-81000

Abstract: IAM transistor
Contextual Info: HEWLETT-PACKARD/ CMP N T S blE J> m M447SA4 aOCH'nb fl5b IAM-81000 MagIC Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/IF Amplifer Chip Thai HEW LETT W!HA PACKARD IAM-81000 Chip Outline Features • • • • • • • • I HPA 8 dB RF-IF Conversion Gain From 0.05 to 5 GHz

Contextual Info: PACKAGING CODES STANDARD ANTI-STATIC PACKAGE PACKAGE CODE CODES PACKAGING DESCRIPTION 1 51 Bulk 2 3 4 4A 4B 4C 4D 5 52 53 54 D O -2 1 4 /2 1 5 A A SM B , 12m m Tape, 7" D iam eter Plastic Reel 26m m Horizontal Taping and Am m o Box Packing 52.4m m Horizontal Tape, 13” D iam eter P aper R eel C lass I

JESD22-A114-B

Abstract: transistor A114 IAM-91563 M2003 M2004 MTTF transistor 107 A
Contextual Info: Agilent MGA-8xxxx Series IAM-91563 GaAs MMIC Devices Reliability Data Sheet Description The devices referenced on this data sheet are made using the Agilent Technologies Pseudomorphic High Electron Mobility Transistor PHEMPT A process. Life Tests The following cumulative test

TDA3654

Abstract: ac voltage stabilizer circuit diagram TDA3654AU TDA3654U LG flyback flyback data pin diagram QDM7234 sot131b sot157b toa25
Contextual Info: NAPC/ SIGNE TIC S IflE » • Signetics TDA3654 bb53*iaM 0QM7235 Ö ■ SIC3_ T -7 7 -0 -7 -1 Vertical Deflection Output Circuit Product Specification Linear Products PIN CONFIGURATION DESCRIPTION FEATURES The TDA3654 is a full-performance verti­ cal deflection output circuit in a 9-lead,

Contextual Info: data sheet '332. MagIC Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/IF Amplifer Chip July, 1991 Features • • • • • • • • IAM-8100 Chip Outline 8 dB RF-IF Conversion Gain From 0.05 to 5 GHz IF Output From DC to 1 GHz with Gain

ck 77-1 3 94v

Abstract: MAX1771 15VInput MAX1771CPA
Contextual Info: 72V o r A djustable, High-Efficiency, L o w Iq , S t e p - U p DC- DC C o n t r o l l e r Description This controller uses m iniature external com ponents. Its high sw itching fre q u e n cy up to 300kH z allow s surface-m ount m agnetics of 5mm height and 9mm d iam e­

la1385

Abstract: vertical deflection circuit
Contextual Info: SANYO SEMICONDUCTOR 7997076 SANYO CORP 7b SEMICONDUCTOR DE 7^707^ CORP O D G iam 76C LA1385 01841 ^ Îl-o f ô ° T D T’ 77-'Ö7~11 C IR C U IT D R A W I N G N o .a O S 6 monolithic linear IC VERTICAL DEFLECTION CIRCUIT OF B / W TV 3018A The L A 1 3 8 5 , which is an IC fo r vertical deflection

smd transistor 2f

Abstract: 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z
Contextual Info: Basic Ordering and Packing Form Explanation of Packing Lists I.Type No. Exam ple 1 D 1N □ Exam ple 2 2 S K 2663 - Reverse voltage X l/1 0 . I -JEITA No. -JEITA Classification. 2SA, 2SB, 2SC, 2SD: Transistor 2SJ, 2SK: M OSFFT 2.C ode No. The code specify each packing form.

2n4427

Abstract: 2N3866 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640
Contextual Info: b5E D 711Dfl2b 00L3b7fl CHG • PHIN 2N3866 2N4427 PHILIPS INTERNATIONAL SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits.

BFS22A

Contextual Info: PHILIPS bSE IN TE RNA TI ONA L T> m 711002b O D b S b n bbS I PHIN B FS 2 2 A V.H.F. POW ER TRAN SISTO R N-P-N epitaxial planar transistor intended fo r use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every tran­

2N3924

Abstract: inductor 4312 020 36640 2N3927 7z08 4312 020 36640 2N3926 aTO-39 842 ic Silicon Epitaxial Planar Transistor philips cl 100 hie
Contextual Info: b'ìE T> • 2N3924 2N3926 2N3927 b b S B ' m 002*1700 Tb7 BiAPX N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS T he 2 N 3 9 2 4 is an n-p-n o verlay tra nsistor in a T O -3 9 m etal envelope w ith the c o lle c to r connected to the case.

Transistor hall s41

Abstract: s41 230 hall effect s41 hall effect sensor 1756-QS105 HEIDENHAIN endat 2.1 2094-EN02D-M01-S1 hall effect sensor s41 s53 optocoupler 2094-BM01-M 1783-ETAP
Contextual Info: Kinetix 6200 and Kinetix 6500 Modular Multi-axis Servo Drives User Manual Catalog Numbers 2094-BC01-MP5-M, 2094-BC01-M01-M, 2094-BC02-M02-M, 2094-BMP5-M, 2094-BM01-M, 2094-BM02-M, 2094-SE02F-M00-S0, 2094-SE02F-M00-S1, 2094-EN02D-M01-S0, 2094-EN02D-M01-S1,

BSS59

Abstract: bss 97 transistor
Contextual Info: BSS59 Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Verstärker und schnelle Schalter Applications: A m piifier and high speed switches Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

BFS22A

Abstract: J22 transistor 27Z60 BFS22
Contextual Info: J b^E J> N AUER PHILIPS/DISCRETE bbS3^31 DDSÔ7BE Ifi? I IAPX BFS22A V.H.F. POWER TRANSISTOR N-P-N e p itaxia l planar tra n sisto r intended fo r use in class-A, B and C operated m obile, industrial and m ilita ry tra n s m itte rs w ith a supply voltage o f 13,5 V . The tra n sisto r is resistance stabilized. Every tra n ­

TFK BC

Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Contextual Info: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:

2N929

Abstract: 2N930 929-2N
Contextual Info: 2 N 929 • 2 N 930 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: Rauscharme NF-Verstärker Applications: Low noise AF am plifiers Besondere Merkmale: Features: • Besonders rauscharm bei kleinen Kollektorström en

tr 2n2160

Abstract: 2N167 2N1471 2n1671a 2n2160 unijunction
Contextual Info: TYPES 2N1671, 2N1671A, 2N1671B. ¿mm P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS B U L L E T IN N O . D L S 6 8 3 1 8 9 , O C T O B E R 1 9 6 2 - R E V t S E D M A Y 1 96 8 Designed for Medium-Power Switching/ Oscillator and Pulse Timing Circuits • Highly Stable Negative Resistance

bly91a

Contextual Info: PHILIPS INTERNATIONAL MA I N T E N A N C E TYPE MIE D E3 7110fl2b O Q 2 7 c377 S B 3 R H I N JL II BLY91A T '3 3 - 0 7 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and

tlk 94

Abstract: 2N2193 High Speed Switches C4752 tfk s 220
Contextual Info: 4M> Nicht für Neuentwicklungen Not for new developments 2 N 2193 'W Silizium-NPN-Epitaxial-Pianar-Schalttransistor Silicon NPN Epitaxial Planar Switching Transistor Anwendungen: HF-Verstärker und schnelle Schalter Applications: RF am plifiers and high speed switches

BLY94

Abstract: vhf power transistor 50W philips Trimmer 60 pf transistor TT 2222 BLY94 application notes BLY94 a class D 50w 50w rf power transistor sot55 SOT-55
Contextual Info: b'ìE » N AMER PHILIPS/DISCRETE • bbS3131 ÜÜSTTSfl 22T IAPX B LY94 V .H .F . P O W E R T R A N S IS T O R N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 28 V . The transistor is resistance stabilized. Every tran­