I80M Search Results

008MP

Contextual Info: R E V I S I O N S THIS DRAMIN6 IS THE PROPERTY OF NATIONAL SEMICONDUCTOR CORPORATION. NO USE THEREOF SHALL BE MAOE OTWEF. THAN AS A REFERENCE FOR PROPOSALS AS SUBMITTED TO NATIONAL SEMICONDUCTOR CORPORATION FOR JOBS TO BE EXECUTED IN CONFOfKXTY WITH SUCH PROPOSALS UNLESS THE CONSENT OF SAIO NATIONAL SEMICONDUCTOR CORP­

L5002

Contextual Info: EL2160C é la n te c e u iô o c 180MHz Current Feedback Amplifier h!ghpERfORSMSŒANALositiTEGRÂTEQctRcutTs Features General Description 130M H z 3dB bandw idth Av =+2 180M H z 3dB bandw idth (Av =+1) 0.01% differential gain, RL=500£2 0.01° differential phase, R L=500£2

FLM0910-8C

Abstract: i80m
Contextual Info: FLM0910-8C Fuffrsu Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • High Output Power: P-idg = 38.5dBm Typ. High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Broad Band: 9.5 ~ 10.5GHz Impedance Matched Zin/Zout = 50Q

FEI Microwave

Contextual Info: FLM7785-SC Internally Matched Power iaAs FEI's ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V 42.8 w Total Power Dissipation Tc Pt = 25°C Storage Temperature

EHP14

Contextual Info: NJG1304E G a A s POWER A M P L I F I E R 1C • GENERAL DESCRIPTION NJG1304E is a GaAs MM IC designed mainly for driver ■ PACKAGE OUTLINE amplifier of PHS base station in Japan. This is a variable gain type with 20dB dynamic range. It features very low distortion and P « = d is

FLM8596-8C

Contextual Info: FLM8596-8C Internally Matched Power GaAs l E I s ABSOLUTE MAXIMUM RATING Am bient Tem perature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage VGS -5 V 42.8 w °c °c Total Power Dissipation Tc = 25°C Pt Storage Temperature

Contextual Info: F LM 7177-81 Internally Matched Power ìaAs I E ! s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) -Condition item Symbol Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 42.8 w Total Power Dissipation Tc = 25°C Pt Storage Temperature

i80m

Abstract: FLM7785-8C
Contextual Info: F |rUJI,çPI ,U. FLM7785-8C j Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G -j^B = 6.0dB (Typ.) High PAE: r iadd = 27% (Typ.) Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q

FLM7177-8D

Abstract: i80m
Contextual Info: FLM7177-8D FimTÇII rU JI Ij U Internally M a tc h e d P o w e r G aA s F E T s FEATURES • • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 29% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 7.1 ~ 7.7GHz

GaAs FETs

Abstract: FLM4450-8E
Contextual Info: F| .fjW-,. J FLM4450-8E Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G -j^B = 10.0dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q

FLM3742-8E

Contextual Info: pi itrrci I FLM3742-8E Internally M a tc h e d P o w e r G aA s F E T s *" ^ FEATURES • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G -^ g = 11dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 3.7 ~ 4.2GHz

Contextual Info: F L M 6472-HD Internally Matched Power GaAs ¡ E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 42.8 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature

NJG1302

Abstract: NJG1302V SSOP14 radio ic
Contextual Info: NJG1302 TRANSMITTING GaAs POWER AMPLIFIER IC • GENERAL DESCRIPTION NJG1302 is a GaAs MMIC designed mainly for final stage power amplifier of PHS in Japan. This is a variable gain type with 20dB dynamic range. It has input and output matching circuits internally

Contextual Info: C O IL S RC TYPE Series TEST INSTRUMENTS: L : HP 4342A Q Meter IDC : HP 4261A Digital LCR Meter PRODUCT IDENTIFICATION RC 05 13 A -100 M- D2 Material Tolerance M:±20% Inductance IO^xH T:Tube pack $T:Tappmg pack B Dim. A Dim. CHOKECOILS RCTYPE DIMENSIONS

FLM1011-8D

Contextual Info: FLM1011-8D F im T Ç II r U J I 1j U Internally M a tc h e d P o w e r G a A s F E T s FEATURES • High Output Power: P-idg = 38.5dBm Typ. • High Gain: G-j^B = 5.0dB (Typ.) • High PAE: r iadd = 22% (Typ.) • Low IM 3 = -45dBc@Po = 28dBm • Broad Band: 10.7 ~ 11.7GHz

PI054-33OL

Abstract: CH102 pi0105 P1043 PI043-4R7M PI073-120M O73-680K PIO75-331K CH-102
Contextual Info: m • pio P I O S E R I E S POWER INDUCTOR • FEATURES V a r i o u s h i g h power s u r f a c e m o u n t a b le ty p e in d u c to rs are s u p e rio r to h ig h s a t u r a t i o n . • APPLICATION P o rta b le co m m u n ica tio n Notebook Com puter

LQN21

Abstract: Feme CST A PFBF455JR CSB250D feme cst a 100 21 FEME CST A 200 DFC2R CFBF455 sfeca CDAC10.7
Contextual Info: •MINIMUM QUANTITY GUIDE Quantity pc& {mm} Products Name T 0.5 0.5 10,000 50,000 1,000” TZVX2 2,000 10,000 500 0.8 4,000 10,000 1,000’> TZV02 2,000 8,000 500 0.7 4,000 10,000 1,000" TZC03 1,000 4,000 500 1.25 1.0 4,000 10,000 1,000 TZBX4 500 2,500 1.25