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Untitled Abstract: No abstract text available Text: $GYDQFHG 3RZHU 026 7 IRFW/I710A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.6Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V	Original	PDF	IRFW/I710A
Untitled Abstract: No abstract text available Text: IRFW/I710A A dvanced Power MOSEET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 400 V ^ D S o n = 3 . 6 Q. lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 400V	OCR Scan	PDF	IRFW/I710A
EZ-34 Abstract: IRFM120A U2N60 Text: Device List D2 / I 2 IRFW/IZ14A IRFW/IZ24A IRFW/EZ34A IRFW/IZ44A IRFW/I510A ERFW/I520A IRFW/I530A FRFW/I540A IRFWfl550A IRFW/I610A IRFW/I620A IRFW/I630A IRFW/I640A IRFW/I614A IRFW/I624A IRFW/I634A IRFW/I644A IRFW/I710A IRFW/I720A IRFW/I730A IRFW/I740A SSW/I1N50A	OCR Scan	PDF	IRFW/IZ14A IRFW/IZ24A IRFW/EZ34A IRFW/IZ44A IRFW/I510A ERFW/I520A IRFW/I530A FRFW/I540A IRFWfl550A IRFW/I610A EZ-34 IRFM120A U2N60
IRF 344 Abstract: IRF n 30v Text: IRFW/I710A A d van ced Power MOSFET FEATURES B ^D S S - 400 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area 2 A D2-PAK ♦ Lower Leakage Current: 10\|iA (Max.) @ V DS = 400V	OCR Scan	PDF	IRFW/I710A IRF 344 IRF n 30v
IBJT VDS 400V Abstract: i710a Text: IRFW/I710A A dvanced Power MOSFET FEATURES B V DSS — 4 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 3 .6 Î2 2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10\|xA (Max.) @ V DS = 400V	OCR Scan	PDF	IRFW/I710A IBJT VDS 400V i710a
Untitled Abstract: No abstract text available Text: A d v a n c e d P o w e r IRFW/I710A M O S F Ë T FEATURES 4 0 0 B V Ds s • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 iA (Max. @ V DS = 400V	OCR Scan	PDF	IRFW/I710A
M05-fET Abstract: No abstract text available Text: IRFW/I710A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ B BVDss “ 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 uA M ax. @ VDS = 400V	OCR Scan	PDF	IRFW/I710A M05-fET
L02A Abstract: No abstract text available Text: IRFW/T710A Advanced Power MOSFET FEATURES BVdss = 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 m A M ax. @ VDS= 400V	OCR Scan	PDF	IRFW/T710A IRFW/I710A L02A
Untitled Abstract: No abstract text available Text: IRFW /I7 1 0 A A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 3 .6 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = ♦ Improved Gate Charge 2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V	OCR Scan	PDF	IRFW/I710A