I0004 Search Results

Contextual Info: TERMINAL SHIELD CASE HOUSING tm MATERIAL UL 94V-0 Tts'Jx'HOUSING:LIQUID CRYSTAL POLYMER BLACK UL94V-0 t = 0. 2 5 4 TERMINAL:BRASS(t= 0.254) v -IL K ( t= 0 . 4) SHIELD CASEsCOPPER ALLOY(t=0.4) X 'V + tt# PLATING m DWG. NO. SD~59 I 10-004 _ 8_

memory card reader ckt diagram

Abstract: vl1001 toshiba is 1462 LT 542 seven segment display P04020-XXXS I002 JTMP04020-XXXS 7 SEGMENT DISPLAY LT 543 PIN CONFIGURATION I0003 I0021
Contextual Info: TOSHIBA JTM P04020-XXXS TO SHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC JTMP04020-XXXS CM OS 4 BIT LL MICROCONTROLLER LL : LOW POWER CONSUMPTION & LOW VO LTAGE OPERATION MICROCONTROLLER JTMP04020-XXXS is a high-performance LL microcontroller developed for use in contact-type personal

XP1006-BD

Abstract: XP1006 X-band GaAs pHEMT MMIC Chip GAAS FET AMPLIFIER x-band 10w Chip Advanced Tech
Contextual Info: XP1006-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Rev 01-Sep-10 Features Chip Device Layout • X-Band 10W Power Amplifier • 21.0 dB Large Signal Gain • +40.0 dBm Saturated Output Power • 30% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing

P1006BD

Abstract: P1006-BD XP1006-BD GAAS FET AMPLIFIER x-band 10w Mimix Asia
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier November 2008 - Rev 11-Nov-08 P1006-BD Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

P1014

Abstract: xp1014 84-1LMI XP1006 bonding GHz HPA
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 April 2006 - Rev 14-Apr-06 Features XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit

p1014

Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit

tanaka gold wire

Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

litton

Abstract: litton ac6023 Litton Precision Products ac6023 bax 50
Contextual Info: AC6023 Kompakte Schleifring-Kapsel in vielfältigen Ausführungen ● ● ● ● ● ● ● Schnell lieferbare StandardAusführung Geeignet zur Übertragung von hohen digitalen Datenraten, analogen Signalen und elektrischen Leistungen Ringe und Bürsten vergoldet

W0901

Abstract: W0914 W0915 W090E W0011 W000A w0006 CA850 ID850QB RX850
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

W1346

Abstract: 20/F2MCTM-16 fcc907s
Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM42-00328-1E F²MCTM-16 FAMILY 16-BIT MICROCONTROLLER SOFTUNETM C COMPILER MANUAL F²MCTM-16 FAMILY 16-BIT MICROCONTROLLER SOFTUNETM C COMPILER MANUAL FUJITSU LIMITED PREFACE • Objective of This Manual and Target Readers

U18515EJ1V0UM00

Abstract: W0005 CA850 ID850QB RX850 SM850 W0901 ld850 W090D
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Chip Advanced Tech

Abstract: XP1006 XP1006 bonding
Contextual Info: XP1014-BD 8.5-11.0 GHz GaAs MMIC Power Amplifier Features • XP1006 Driver Amplifier • 18.0 dB Small Signal Gain • +31.0 dBm Saturated Output Power • 35% Power Added Efficiency • On-chip Gate Bias Circuit • 100% On-Wafer RF, DC and Output Power Testing

ATM622-S

Abstract: D10B11 I600C
Contextual Info: S un M icro electro nics July 1997 ATM622-S DATA SHEET Single Chip ATM SAR D e s c r ip t io n The ATM622-S is a single chip ATM solution designed to connect an ATM interface to the host via IEEE 1496-1993 bus standard SBus . The chip is an implementation of the ATM SAR (Segmentation And Reassem­

power transistor gaas x-band

Abstract: mmic AMPLIFIER x-band 10w
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier June 2005 - Rev 05-Jun-05 P1006 Features Chip Device Layout X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

LD 260

Contextual Info: TOSHIBA JTM P04020-XXXS TO SHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC JTMP04020-XXXS CM OS 4 BIT LL MICROCONTROLLER LL : LOW POWER CONSUMPTION & LOW VO LTAGE OPERATION MICROCONTROLLER JTMP04020-XXXS is a high-performance LL microcontroller developed for use in contact-type personal

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

W1269

Abstract: e402 E4010D simple and sample ascii level language programs INC896 LIB896 MB89P935B OPT896 W1078P Kyoritsu
Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM25-00202-2E F2MC-8L/8FX FAMILY 8-BIT MICROCONTROLLER SOFTUNETM C COMPILER MANUAL F2MC-8L/8FX FAMILY 8-BIT MICROCONTROLLER SOFTUNETM C COMPILER MANUAL FUJITSU LIMITED PREFACE • Objective of This Manual and Target Readers

fmc1

Abstract: MB90F553A w1156 W1269 lib902 F2MC-16 F2MC-16LX INC907 INC907C OPT907
Contextual Info: FUJITSU SEMICONDUCTOR CM42-00328-3E CONTROLLER MANUAL F²MC-16 FAMILY SOFTUNE C COMPILER MANUAL F²MC-16 FAMILY SOFTUNE C COMPILER MANUAL FUJITSU LIMITED PREFACE • Objective of This Manual and Target Readers This manual describes the SOFTUNE C compiler hereinafter referred to as the C compiler

Contextual Info: R E V ISIO N S M A D E FR O M D E S C R IP T IO N I C * A/ ¿ T /V / S '- J U L . -7 á > /¿ ./3 0 £ J U L . 7 Cf Vb CM. 2.4-5 + 5 0 . G-J6- i^40Gr03. CN 2 8 4 9 5 0 - A J 10 DEC 86 CM 3 1 4 1 6 A KH 23 FE B 90 CN 3 4 6 3 9 C KH 17 MAY 93 REVISED PER ER22040

Contextual Info: \ 20 RECOMMENDED PCB LAYOUT COMPONENT SIDE / tb_frane_A1_P_ME_T| Rev. D 2004/04/02 | / M K NOTES: 1 MATERIALS: THERMOPLASTIC POLYESTER,GLASS FILLED, UL94V-0.COLOUR: PEBBLE GREY RAL 7032 TERMINAL - PHOSPHOR BRONZE MOUNTING CLIP: STEEL 2) FINISH: TERMINAL:CONTACT AREA

28 pin ic TM 1628 driver display

Abstract: TM 1628 driver display TM 1628 display driver A32F3 A32-F3
Contextual Info: TOSHIBA TMP04CH01 FXXX JTMP04CH01XXXS TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T MP04C H01 FXXX( JT MP04C H01XXXS) CMOS 4BIT LL MICROCONTROLLER (LL : LOW POWER CONSUMPTION & VOLTAGE OPERATION MICROCONTROLLER) ♦ o u t l in e The TMP04CH01FXXX is a high-performance

XP1006-FA-0N00

Abstract: mmic AMPLIFIER x-band 10w MMIC X-band amplifier XP1006-FA
Contextual Info: XP1006-FA 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin Rev 01-Sep-10 RoHS Compliant Features • • • • • • X-Band 10W Power Amplifier Flange Package 21 dB Large Signal Gain +40 dBm Saturated Output Power 30% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing

mmic AMPLIFIER x-band 10w

Abstract: P1006-FA power transistor mimix x-band XP1006-FA-0N00 x-band power amplifier I0004966
Contextual Info: 8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin September 2008 - Rev 10-Sep-08 P1006-FA Features X-Band 10W Power Amplifier Flange Package 21.5 dB Large Signal Gain +40.5 dBm Saturated Output Power 37% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing

power transistor gaas x-band

Abstract: x-band transistor
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier September 2005 - Rev 30-Sep-05 P1006 Features Chip Device Layout X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing