Untitled
Abstract: No abstract text available
Text: HZ12LHB1 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage12.6 @I(Z) (A) (Test Condition)500u Tolerance (%)2 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.80 Temp Coef pp/10k Maximum Operating Temp (øC)175õ
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HZ12LHB1
Voltage12
pp/10k
StyleDO-35
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Untitled
Abstract: No abstract text available
Text: HZ12LHC1 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage13.4 @I(Z) (A) (Test Condition)500u Tolerance (%)2 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.80 Temp Coef pp/10k Maximum Operating Temp (øC)175õ
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HZ12LHC1
Voltage13
pp/10k
StyleDO-35
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Untitled
Abstract: No abstract text available
Text: HZ12LHB3 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage13.1 @I(Z) (A) (Test Condition)500u Tolerance (%)2 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.80 Temp Coef pp/10k Maximum Operating Temp (øC)175õ
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HZ12LHB3
Voltage13
pp/10k
StyleDO-35
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HZ15L2
Abstract: HZ7LB-2 HZ11LC3 HZ16L-2 HZ16L3 HZ24-2L HZ24L HZ11LC2 HZ30-2L HZ7LB-3
Text: HZ…L Series SILICON EPITAXIAL PLANER ZENER DIODES FOR LOW NOISE APPLICATION Features • Diode noise level of this series is approximately 1/3 – 1/10 lower than the Hz series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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HZ12B2L
HZ15L2
HZ7LB-2
HZ11LC3
HZ16L-2
HZ16L3
HZ24-2L
HZ24L
HZ11LC2
HZ30-2L
HZ7LB-3
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ECG 177 zener diode
Abstract: B2 Zener HZ6L Hitachi DSA002721 Zener do35 marking code a2 Zener do35 marking code 9 a2
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-118A Z Rev 1 November 1996 Features • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-118A
DO-35
-55Hitachi
ECG 177 zener diode
B2 Zener
HZ6L
Hitachi DSA002721
Zener do35 marking code a2
Zener do35 marking code 9 a2
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HZ9LB3
Abstract: HZ11LC2 HZ36L1 HZ9LC-3 zener 7.2 V HZ6L
Text: HZ…L Series SILICON EPITAXIAL PLANER ZENER DIODES Max. 0.5 for low noise application Min. 27.5 Max. 1.9 Features • Diode noise level of this series is approximately 1/3 – 1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum
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DO-35
HZ12B2L
HZ9LB3
HZ11LC2
HZ36L1
HZ9LC-3
zener 7.2 V
HZ6L
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HZ15L2
Abstract: HZ16L-2 HZ6LA-1 HZ6LB-1 HZ6B2L HZ11LC2 HZ36L1 HZ11LA-1
Text: HZ…L Series SILICON EPITAXIAL PLANER ZENER DIODES FOR LOW NOISE APPLICATION Features • Diode noise level of this series is approximately 1/3 – 1/10 lower than the Hz series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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HZ12B2L
HZ15L2
HZ16L-2
HZ6LA-1
HZ6LB-1
HZ6B2L
HZ11LC2
HZ36L1
HZ11LA-1
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Untitled
Abstract: No abstract text available
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-118A Z Rev 1 Features • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-118A
DO-35
HZ36-2L
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Untitled
Abstract: No abstract text available
Text: HZ6L Series Zener Diodes VZ : 6.0 - 36V PD : 400mW DO - 35 GLASS Features Low leakage, low zener impedance Maximum power dissipation of 400 mW Ideally suited for stabilized power supply, etc. Pb / RoHS Free Mechanical Data Case: DO-35 Glass Case
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400mW
DO-35
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B2 Zener
Abstract: HZ11L HZ12L HZ15L HZ16L HZ18L HZ20L HZ22L HZ24L HZ27L
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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HZ6A1L
Abstract: HZ20L DO-204AH HZ11L HZ12L HZ15L HZ16L HZ18L HZ22L HZ24L
Text: HZ6L Series ZENER DIODES DO - 35 Glass DO-204AH VZ : 6.0 - 36V PD : 400mW FEATURES : 1.00 (25.4) min. 0.079(2.0 )max. * Low leakage, low zener impedance * Maximum power dissipation of 400 mW * Ideally suited for stabilized power supply, etc. * Pb / RoHS Free
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DO-204AH)
400mW
DO-35
HZ20L
HZ22L
HZ24L
HZ27L
HZ30L
HZ33L
HZ36L
HZ6A1L
HZ20L
DO-204AH
HZ11L
HZ12L
HZ15L
HZ16L
HZ18L
HZ22L
HZ24L
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SILICON PLANAR zener diode DO-35
Abstract: BAY 73 diode B2 Zener hz30 hz6a MARK b3 zener diode
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0182-0200Z Previous: ADE-208-118A Rev.2.00 Mar.11.2004 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
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REJ03G0182-0200Z
ADE-208-118A)
DO-35
SILICON PLANAR zener diode DO-35
BAY 73 diode
B2 Zener
hz30
hz6a
MARK b3 zener diode
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B2 Zener
Abstract: A2 9 zener diode zener mark code C1 zener diode B3 Hitachi DSA00776 zener diode c2 HZ16L a3 6 zener zener diode A3 zener diodes color coded
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-118A Z Rev 1 November 1996 Features • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-118A
DO-35
SC-48
B2 Zener
A2 9 zener diode
zener mark code C1
zener diode B3
Hitachi DSA00776
zener diode c2
HZ16L
a3 6 zener
zener diode A3
zener diodes color coded
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HZ18L-2
Abstract: HZ6LB-1 HZ6LA-1 HZ16L-1 HZ11LC2 HZ12LB-1 HZ36L1 HZ6LC-1 HZ7LB-2 HZ11LA-1
Text: HZ…L Series SILICON EPITAXIAL PLANER ZENER DIODES Max. 0.5 for low noise application Min. 27.5 Max. 1.9 Features • Diode noise level of this series is approximately 1/3 – 1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum
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DO-35
HZ12B2L
HZ18L-2
HZ6LB-1
HZ6LA-1
HZ16L-1
HZ11LC2
HZ12LB-1
HZ36L1
HZ6LC-1
HZ7LB-2
HZ11LA-1
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Untitled
Abstract: No abstract text available
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-118A Z Rev 1 November 1996 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-118A
DO-35
DO-35
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diode HZ27L-3
Abstract: hz11l
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-118A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-118A
DO-35
HZ20L
HZ22L
HZ24L
HZ27L
HZ30L
HZ33L
HZ36L
HZ36-3L
diode HZ27L-3
hz11l
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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HZ10E
Abstract: HZ10P HZ11 HZ12 HZ12E HZ12L HZ12P HZ13E HZ13P HZ15
Text: - 230y JF í H Z5. I E H Z5. I P H Z5. 6E H Z5. 6P HZ5L1, HZ5 HZ6 H Z 6 .2 E H Z6. 2P H Z 6 .8 E H Z6. 8P H Z6L HZ6® HZ6®L HZ7 HZ7. 5E HZ7. 5P HZ7L HZ7® HZ7®L H Z8.2E H Z8 .2 P HZ9 HZ9. I E ttZ 9 .IP HZ9L H Z9® HZ9®L HZ10E HZ10P HZ11 HZ11E HZ11L HZ11P
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40insTiMÂ
HZ12E
iS40isT-iMS:
HZ12L
HZ12P
HZ13E
40isT'
HZ13P
HZ10E
HZ10P
HZ11
HZ12
HZ15
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diode 9.1 b3
Abstract: diode Lz 99 zener diode A3 hz6a-2l 5.6 B1 zener diode HZ6L A2 zener diode HITACHI HZ-L ADE-208-118A HZ7L
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-118A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-118A
DO-35
HZ36-3L
diode 9.1 b3
diode Lz 99
zener diode A3
hz6a-2l
5.6 B1 zener diode
HZ6L
A2 zener diode
HITACHI HZ-L
HZ7L
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HZ10E
Abstract: HZ10P HZ11 HZ12 HZ12E HZ12L HZ12P HZ13E HZ13P HZ15
Text: - 230y JFí HZ5. IE HZ5. IP HZ5. 6E HZ5. 6P HZ5L1, H Z 5 HZ6 HZ6.2E HZ6. 2P HZ6.8E HZ6. 8P HZ6L H Z 6® HZ6®L HZ7 HZ7. 5E HZ7. 5P HZ7L HZ7® HZ7®L HZ8.2E HZ8.2P HZ9 HZ9. IE ttZ9.IP HZ9L HZ9® HZ9®L HZ10E HZ10P HZ11 HZ11E HZ11L HZ11P HZ11® H ZU ® L HZ 12
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40insTiMÂ
HZ12E
iS40isT-iMS:
HZ12L
HZ12P
HZ13E
40isT'
HZ13P
HZ10E
HZ10P
HZ11
HZ12
HZ15
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A2 zener diode
Abstract: 5.6 B1 zener diode 9.1 b2 diode rd 9.1 b2 52Y Diode
Text: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-118A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for
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ADE-208-118A
DO-35
HZ24L
HZ27L
HZ30L
HZ33L
HZ36L
HZ36-3L
A2 zener diode
5.6 B1 zener diode
9.1 b2 diode
rd 9.1 b2
52Y Diode
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HZ7L
Abstract: HZ6L
Text: HZ-L Series Silicon Epitaxial Planar Zener Diodes for Low Noise Application Features Outline • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are
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DO-35_
180x1
HZ7L
HZ6L
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