HYMD564M646C Search Results

HYMD564M646C

Contextual Info: HYMD564M646C P 6-D43/J/K/H SERIAL PRESENCE DETECT Rev. 0.0 -D43 Byte Function described Function support Number of Bytes written into serial memory at module manufacturer 128 Bytes 1 Total Number of Bytes in SPD device 256 Bytes 2 Fundmetal Memory Type DDR SDRAM

Contextual Info: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered

Contextual Info: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered

HYMP512S64CP8-Y5

Abstract: HYMP564S64CP6-Y5 H5TQ1G63BFR-H9C h5ps2g83afr-s6c H5PS1G63EFR-Y5C H5TQ1G83BFR-H9C HYMP564S64CP6-C4 HY5PS121621Cfp-y5 H5PS1G63EFR-S5C HY5PS12821CFP-Y5
Contextual Info: Q3’2009 Databook C omputing Memory DDR3 SDRAM : Component VDD DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL. 1.5V 1Gb 256Mx4 DDR3 1333 H5TQ1G43AFP-H9C FBGA 78ball 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43BFR-H9C FBGA(78ball) 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43TFR-H9C

Contextual Info: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered

HYMD564M646C

Abstract: d431 DDR266 DDR266B DDR333 DDR400 DDR400B HYMD532M646C hynix ddr hynix ddr sdram
Contextual Info: 200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. TSOP This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb C ver. DDR SDRAMs in 400mil TSOP II packages on a 200pin glass-epoxy substrate. This Hynix 512Mb C ver. based unbuffered