Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR H Y M 5 8 1 O O O A S e rie s 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000A is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM.
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HYM581000A
HY514400
HYM581000AM
50nYCLE
1BB03-20-MAY93
061MAX.
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HYM591000AM
Abstract: bb04 HY531000
Text: •HYUNDAI SEMICONDUCTOR HYM591000A Series 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000A is a 1M x 9-bit Fast page mode CM O S DRAM module consisting of two HY514400 and one HY531000 in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted
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HYM591000A
HY514400
HY531000
HYM591000AM
tWCHf31)
BB04-20-M
04-20-M
bb04
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U351
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM581000A Series 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000A is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. Q.22fiF decoupling capacitor Is mounted for each DRAM.
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OCR Scan
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PDF
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HYM581000A
HY514400
22fiF
HYM581000AM
1BB03-20-MAY93
1BB03-20-MAYS3
U351
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