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    SK Hynix Inc HY57V561620FTP-H-C

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    Quest Components HY57V561620FTP-H-C 20
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    SK Hynix Inc HY57V561620TH

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    SK Hynix Inc HY57V561620CT-H

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    SK Hynix Inc HY57V561620CTP-H

    IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
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    Quest Components HY57V561620CTP-H 196
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    SK Hynix Inc HY57V561620BT-H

    IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
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    Quest Components HY57V561620BT-H 72
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    HY57V561620 Datasheets (92)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY57V561620 Hynix Semiconductor 4Banks x 4M x 16-Bit Synchronous DRAM Original PDF
    HY57V561620B Hynix Semiconductor 4 Banks x 4M x 16-Bit Synchronous DRAM Original PDF
    HY57V561620B(L/S)T-6 Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-6 Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-7 Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-7 Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-8 Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-8 Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-H Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-H Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-K Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-K Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-P Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-P Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-S Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L/S)T-S Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620BLT Hynix Semiconductor 4 Banks x 4M x 16-Bit Synchronous DRAM Original PDF
    HY57V561620B(L)T-6(I) Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620B(L)T-6(I) Hynix Semiconductor SDRAM - 256Mb Original PDF
    HY57V561620BLT-6I Hynix Semiconductor 4 Banks x 4M x 16-Bit Synchronous DRAM Original PDF

    HY57V561620 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HY57V561620T

    Abstract: HY57V561620
    Text: HY57V561620T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V561620 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V561620 is organized as 4 banks of


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    HY57V561620T 16Bit HY57V561620 456bit 304x16. 400mil 54pin HY57V561620T PDF

    Untitled

    Abstract: No abstract text available
    Text: IC INFORMATION Function DRAM CMOS Type HY57V561620BLT-H Model AVIC-DRV150 VDD1 1 54 VSS3 DQ0 2 53 DQ15 VDDQ1 3 52 VSSQ4 DQ1 4 DQ2 5 VSSQ1 6 DQ3 7 DQ4 8 VDDQ2 9 DQ5 10 DQ6 11 J 1/1 E 51 DQ14 A0-A11 : Address input BA0-BA1 : Bank select address DQ0-DQ15 : Data input/output


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    HY57V561620BLT-H AVIC-DRV150 A0-A11 DQ0-DQ15 A10/AP PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V561620B L T-I 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B-I is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16.


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    HY57V561620B 16Bit HY57V561620B-I 456bit 304x16. 400mil 54pin PDF

    54PIN

    Abstract: 54pin TSOP HY57V561620C HY57V561620CT HY57V561620ctp
    Text: HY57V561620C L T(P) 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C(L)T(P) Series is organized as 4banks of 4,194,304x16.


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    HY57V561620C 16Bit 456bit 304x16. 400mil 54pin 54pin TSOP HY57V561620CT HY57V561620ctp PDF

    HY57V561620

    Abstract: HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-HP HY57V561620T HY57V561620T-8 HY57V561620T-H HY57V561620T-HP HY57V561620T-P HY57V561620T-S
    Text: HY57V561620 L T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16.


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    HY57V561620 16Bit HY57V561620T 456bit 304x16. 400mil 54pin HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-HP HY57V561620T-8 HY57V561620T-H HY57V561620T-HP HY57V561620T-P HY57V561620T-S PDF

    HY57V561620C

    Abstract: HY57V561620CT
    Text: HY57V561620C L T(P) 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C(L)T(P) Series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C(L)T(P) Series is organized as 4banks of 4,194,304x16.


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    HY57V561620C 16Bit 456bit 304x16. 400mil 54pin HY57V561620CT PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V561620 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V561620 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of


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    HY57V561620 16Bit HY57V561620 456bit 304x16. 400mil 54pin PDF

    HY57V561620A

    Abstract: HY57V561620AT-H HY57V561620AT
    Text: HY57V561620AT 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V561620A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620A is organized as 4banks of 4,194,304x16.


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    HY57V561620AT 16Bit HY57V561620A 456bit 304x16. 400mil 54pin HY57V561620AT-H HY57V561620AT PDF

    HY57V561620CT-6

    Abstract: HY57V561620C HY57V561620CLT-6 HY57V561620CLT-H HY57V561620CLT-K HY57V561620CT-8 HY57V561620CT-H HY57V561620CT-K HY57V561620CT-P HY57V561620CT-S
    Text: HY57V561620C L T 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16.


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    HY57V561620C 16Bit 456bit 304x16. 400mil 54pin HY57V561620CT-6 HY57V561620CLT-6 HY57V561620CLT-H HY57V561620CLT-K HY57V561620CT-8 HY57V561620CT-H HY57V561620CT-K HY57V561620CT-P HY57V561620CT-S PDF

    HY57V561620B

    Abstract: HY57V561620BT-H
    Text: HY57V561620B L/S T 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16.


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    HY57V561620B 16Bit 456bit 304x16. 400mil 54pin HY57V561620BT-H PDF

    HY57V561620B

    Abstract: HY57V561620BT-H
    Text: HY57V561620B L T 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16.


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    HY57V561620B 16Bit 456bit 304x16. 400mil 54pin HY57V561620BT-H PDF

    HY57V561620HT

    Abstract: No abstract text available
    Text: HY57V561620H L T 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620HT is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620HT is organized as 4banks of 4,194,304x16.


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    HY57V561620H 16Bit HY57V561620HT 456bit 304x16. 400mil 54pin PDF

    HY57V561620CT-6

    Abstract: HY57V561620CT-6 datasheet HY57V561620CT-8 27ns refresh logic
    Text: HY57V561620C L T 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16.


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    HY57V561620C 16Bit 456bit 304x16. 400mil 54pin HY57V561620CT-6 HY57V561620CT-6 datasheet HY57V561620CT-8 27ns refresh logic PDF

    HY57V561620CT-7

    Abstract: HY57V561620ct-6 hy57v561620ctp
    Text: HY57V561620C L T 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16.


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    HY57V561620C 16Bit 456bit 304x16. 400mil 54pin HY57V561620CT-7 HY57V561620ct-6 hy57v561620ctp PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V561620T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V561620 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of


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    HY57V561620T 16Bit HY57V561620 456bit 304x16. 400mil 54pin PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V561620C L T 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16.


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    HY57V561620C 16Bit 456bit 304x16. 400mil 54pin PDF

    HY57V561620

    Abstract: HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-HP HY57V561620T HY57V561620T-8 HY57V561620T-H HY57V561620T-HP HY57V561620T-P HY57V561620T-S
    Text: HY57V561620 L T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16.


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    HY57V561620 16Bit HY57V561620T 456bit 304x16. 400mil 54pin HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-HP HY57V561620T-8 HY57V561620T-H HY57V561620T-HP HY57V561620T-P HY57V561620T-S PDF

    HY57V561620

    Abstract: HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-HP HY57V561620T HY57V561620T-8 HY57V561620T-H HY57V561620T-HP HY57V561620T-P HY57V561620T-S
    Text: HY57V561620 L T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16.


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    HY57V561620 16Bit HY57V561620T 456bit 304x16. 400mil 54pin HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-HP HY57V561620T-8 HY57V561620T-H HY57V561620T-HP HY57V561620T-P HY57V561620T-S PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V561620B L/S T 4 Banks x 4M x 16Bit Synchronous DRAM Doucment Title 4 Bank x 4M x 16Bit Synchronous DRAM Revision History Revision No. History Draft Date 1.4 143MHz Speed Added July 14. 2003 Remark This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for


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    HY57V561620B 16Bit 143MHz 456bit PDF

    HY57V561620

    Abstract: HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-S HY57V561620T-8 HY57V561620T-H HY57V561620T-S
    Text: HY57V561620 L T 4Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16.


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    HY57V561620 16Bit 456bit 304x16. 400mil 54pin HY57V561620LT-8 HY57V561620LT-H HY57V561620LT-S HY57V561620T-8 HY57V561620T-H HY57V561620T-S PDF

    refresh logic

    Abstract: No abstract text available
    Text: HY57V561620H 4 Banks x 4M x 16Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V561620H is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620H is organized as 4banks of 4,194,304x16.


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    HY57V561620H 16Bit HY57V561620H 456bit 304x16. 400mil 54pin refresh logic PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V561620HT 16Mx16-bit, SK Ref., 4Banks, 3.3V DESCRIPTION The HY57V561620HT is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620HT is organized as 4banks of 4,194,304x16.


    OCR Scan
    HY57V561620HT 16Mx16-bit, HY57V561620HT 456bit 304x16. 400mil 54pin PDF

    256MO

    Abstract: No abstract text available
    Text: HY57V561620 L T 16Mx16-blt, 8K Ref., 4Banks, 3.3V DESCRIPTION The H Y 5 7 V 5 6 16 2 0 is a 2 68,435,456b it C M O S Synchronous DRA M , ideally suited for the main memory applications which require large m em ory density and high bandwidth. H Y 5 7 V 5 6 16 2 0 is organized as 4 banks of 4 ,1 9 4,30 4 x 16 .


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    HY57V561620 16Mx16-blt, 256M-bit 400mil 54pin 256MO PDF

    hynix hy

    Abstract: 57v561620
    Text: HY57V561620 L T-I 16Mx16-bitf 8K Ref., ABanks, 3.3V DESCRIPTION The Hynix HY 57V 561 620 is a 2 6 8 , 4 3 5 , 4 5 6 b i t C M O S S y n c h r o n o u s D R A M , i d e a l l y s u i t e d f o r t he M o b i l e a p p l i c a t i o n s which require low power co nsum ption


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    HY57V561620 16Mx16-bitf 304x16. 16Mx16-bft, 400mi SJ32JU hynix hy 57v561620 PDF