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    HY57V164010

    Contextual Info: -H Y U N D A I - • H Y 57V 164010D 2 Banks X ZU X 4 Bit Synchronous DRAM DESCRIPTION Preliminary The Hyundai HY57V164010D is a 16, 777, 216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010D is organized as 2banks of


    OCR Scan     		164010D HY57V164010D 216-bits 152x4. 400mil 44pin 40-10-M HY57V164010 PDF

    hy57v16

    Abstract: HY57V164010D-10
    Contextual Info: HY57V164010D 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010D is organized as 2banks of


    Original     		HY57V164010D HY57V164010D 216-bits 152x4. 400mil 44pin hy57v16 HY57V164010D-10 PDF