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    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY51V17805B Series 2M X 8-bit CMOS DRAM with Burst EDO PRELIMINARY DESCRIPTION The HY51V17805B is the new generation and fast dynam ic RAM organized 2 ,097,152x8-bit. The HY51V17805B utilized Hyundai's C M OS silicon gate process technology as well as advenced circuit techniques to prove wide


    OCR Scan     		PDF HY51V17805B 152x8-bit. 1AD62-004 HY51V17805BJC HY51V17805BTC HY51V17805BRC

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan     		PDF HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260

    Untitled

    Abstract: No abstract text available
    Text: HY51V17805B Series •«HYUNDAI 2M X 8-bit CMOS DRAM with Burst EDO PRELIMINARY DESCRIPTION The HY51V17805B is the new generation and fast dynamic RAM organized 2,097,152x8-bit. The HY51V17805B utilized Hyundai’s CMOS silicon gate process technology as well as advenced circuit techniques to prove wide


    OCR Scan     		PDF HY51V17805B 152x8-bit. HY51V17805B 1AD62-00-MAY95 HY51V17805BJC HY51V17805BTC HY51V17805BRC