HY5118164B
Abstract: HY5118164BJC HY5116164B
Text: HY5118164B,HY5116164B 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
|
Original
|
HY5118164B
HY5116164B
1Mx16,
16-bit
1Mx16
HY5118164BJC
HY5116164B
|
PDF
|
HY5118164BJC
Abstract: HYM5V72A404 HY514404BJ HY5117404A
Text: QUICK REFERENCE DIMM MODULE 5V Unbuffered DIMM TYPE SIZE 168 Pin 8MB Unbuffered DIMM 16MB 32MB DESCRIPTION 1M X 64 EDO, SL PART NO. HYM564124AR/ATR SPEED REF. 60/70/80 DEVICE USED HEIGHT 1K HY5118164BJC/BTC x 4 S, 1" D, 1" S, 1" IM X 72 EDO, SL HYM572A124AR/ATR
|
OCR Scan
|
HYM564124AR/ATR
HYM572A124AR/ATR
HYM564224AR/ATR
HYM564214AF/ATF
HY5118164BJC/BTC
HY514404BJ/BT
HY5117804BJ/BT
HY5118164BJC
HYM5V72A404
HY514404BJ
HY5117404A
|
PDF
|
HYM532814
Abstract: HY531000AJ HYM532224 hy5118160bjc HYM532214AE60 HY5118160 HYM536A814BM HYM536100AM HY51178048J HY5118160JC
Text: QUICK REFERENCE SIMM MODULE 5V SIMM TYPE SIZE 72 Pin 4MB DESCRIPTION 1M X 32 8 IM M 1Mx36 8M B 2M 2M 16MB 4M 4M 32M B 8M 8M NO TE : 4 X X X X X X 32 36 32 36 32 36 PART NO. SPEED REF. DEVICE USED HEIGHT EDO, S L HYM532124AW/ATW 60/70/80 IK HY5118164BUC/BTC x 2
|
OCR Scan
|
HYM532124AW/ATW
532100AM
HYM532120W/TW
HYMS32120AW/ATW
HY5118164BUC/BTC
HY514400AJ
HY5118160JC/TC
HY5118160BJC/BTC
HY531000AJ
HYM532814
HYM532224
hy5118160bjc
HYM532214AE60
HY5118160
HYM536A814BM
HYM536100AM
HY51178048J
HY5118160JC
|
PDF
|
A8303
Abstract: HY5118164BSLJC HY5118164B 5118164B marking da
Text: •HYUNDAI HY5118164B>HY51161646 1M x 16bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode offers high speed random access of memory cells
|
OCR Scan
|
HY5118164B
HY51161646
HY5118164BJC
HY5118164BSLJC
HY5118164BTC
HY5118164BSLTC
HY5116164BJC
HY5116164BSLJC
HY5116164BTC
HY5116164BSLTC
A8303
5118164B
marking da
|
PDF
|
hy5118164b
Abstract: No abstract text available
Text: “H Y U N D A I HY5118164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5118164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HV5118164B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
|
OCR Scan
|
HY5118164B
16-bit
16-bit.
HV5118164B
12Cjj^
Q004fiBS
1AD58-10-MAY95
|
PDF
|
TIME03
Abstract: No abstract text available
Text: -H YU M Dfll -• HY5118164B,HY5116164B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process
|
OCR Scan
|
HY5118164B
HY5116164B
1Mx16,
16-bit
DG0-DQ15)
TIME03
|
PDF
|
HY5118164B
Abstract: HY5118164BJC60 HY5118164BJC V074 HY5118164BSLRC JD 16 CFt 450 HT
Text: • • H Y U N D A I H Y 5 1 1 8 1 6 4 B S e r ie s 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5118164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
|
OCR Scan
|
16-bit
HY5118164B
16-bit.
Q1480C3
0JJ00
1AD58-10-MA
HY5118164BJC
HY5118164BJC60
V074
HY5118164BSLRC
JD 16
CFt 450 HT
|
PDF
|
Hy5118164B
Abstract: hy51181648 HY5118164C HY5118164
Text: •HYUNDAI H Y 5 1 1 8 1 6 4 B .H Y 5 1 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process
|
OCR Scan
|
HY5118164B
HY5116164B
1Mx16,
16-bit
A0-A11)
DQ0-DQ15)
1Mx16
hy51181648
HY5118164C
HY5118164
|
PDF
|
