HW11Y Search Results

TLS2271

Abstract: 32H6742 schematic diagram of seagate hard disk pcb tls2270 TLS2247 TLS2251 TLS2245 1575R SP4107A 32H6910
Contextual Info: TABLE OF CONTENTS How to use the Data CD-ROM Texas Instruments Storage Products Overview Alpha/Numeric Index 2000 Short Form Catalog Discontinued Parts List DSP and ASIC Quality and Technology HDD Read/Write Amplifiers MR Head Read/Write Thin-Film Head Read/Write

Contextual Info: VM 61214 VTC Inc. Value the C ustom er 14-CHANNEL, MAGNETO-RESISTIVE HEAD, READ/WRITE PREAMPLIFIER WITH SERVO WRITE 950801 ADVANCE INFORMATION F E A TU R ES • High Performance - Read Voltage Gain = 200 V/V Typical - Input Noise = 0.65 nV/VHz Typical

Contextual Info: SSI 32R1576AR ±5 V 10-Channel MR Read/Write Device Prototype March 1998 FEATURES The SSI 32R1576AR is a BiCMOS monolithic integrated circuit designed for use with four-terminal magneto-resistive recording heads. The reader architecture is MR current bias/voltage sense and will

SR1578AAAC

Contextual Info: SR1578AAAC ±5 V 12-Channel MR Read/Write Device DESCRIPTION FEATURES The SR1578AAAC is a BiCMOS monolithic integrated circuit designed for use with four-terminal MagnetoResistive recording heads. The reader architecture is MR current bias/voltage sense and will support a user

2171.75

Abstract: 74350
Contextual Info: VTC Inc. Value the Customerr* V M 6 1 0 1 2 12-CHANNEL, HIGH-PERFORMANCE, MAGNETO-RESISTIVE HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY F E A TU R ES Read Gain = 450 V/V MR Bias Current Range = 8 - 1 8 mA Low Input Noise = 0.55 nV/VHz Maximum Write Current Range = 10 - 35 mA

AN 17823

Contextual Info: WM4 V TC VM 6160 S eries Inc. V a lu e th e C u s to m e rn MAGNETO-RESISTIVE HEAD, PROGRAMMABLE READ/WRITE PREAMPLIFIER with SERVO WRITE August, 1997 FE A T U R E S • G e n e ra l BLOCK DIAGRAM VEE VCC V PO S VNEG VGND - Designed for Use With Four-Terminal MR Heads

rdn 240

Contextual Info: VM61214/VM61214M V TC Inc. Vêtue the Customer 960601 FEATURES 14-CHANNEL, MAGNETO-RESISTIVE HEAD, READ/WRITE PREAMPLIFIER WITH SERVO WRITE AND MIRRORED DIE PRELIM INARY_ DIE PAD DIAGRAM • High Performance - Read Voltage Gain = 200 V/V Typical

AN 15525

Abstract: HR11P HR3N hr2p
Contextual Info: É ü V M 6 1 2 1 4 /V M 6 1 2 1 4 M V TC Inc. Value the Customer FEATURES 14-CHANNEL, MAGNETO-RESISTIVE HEAD, READ/WRITE PREAMPLIFIER WITH SERVO WRITE AND MIRRORED DIE PRELIMINARY DIE PAD DIAGRAM • High Performance • Read Voltage Gain = 200 V/V Typical

HW4X

Abstract: HW4X 3.8 cgt 50 sy hr6y
Contextual Info: SSI 32R1570AR +5, -5 V, 12-Channel MR Head Read/Write Device Preproduction February 1997 FEATURES The SSI 32R1570AR is a BiCMOS monolithic integrated circuit designed for use with four-terminal Magneto-Resistive recording heads. The reader architecture is MR current bias/voltage sense. A

hard disk head preamp

Abstract: hard drive preamp circuit VM6202 56728
Contextual Info: Value the Customer VM 6202 Series MAGNETO-RESISTIVE HEAD, PROGRAMMABLE READ/WRITE PREAMPLIFIER PRELIMINARY FEATURES • General - Requires Only One External Component Rext - Designed for Use With Four-Terminal MR Heads - 2-Line Serial Interface (Provides Programmable Bias Current, Write Current,

AN 17823 A

Abstract: AN 17823 hard disk head preamp 107-327 UCl 21
Contextual Info: w V M 6 1 6 0 S e rie s VTC Inc. Value the Customer MAGNETO-RESISTIVE HEAD, PROGRAMMABLE READ/WRITE PREAMPLIFIER with SERVO WRITE 960601 PRELIMINARY FEATURES BLOCK DIAGRAM • August,1996 G eneral - Designed for Use With Four-Terminal MR Heads - 3-Line Serial Interface

HR11N

Abstract: HR04 HR05N 74744 63701 HR07n HR01P HW05X HW06X 85039
Contextual Info: Value the Custom ern MR MAGNETO-RESISTIVE HEAD, HIGH PERFORMANCE, READ/WRITE PREAMPLIFIER August. 1997 FEATURES • G e n e ra l BLOCK DIAGRAM GND - Designed for Use With Four-Terminal MR Heads Operates from +5V and -4.5V Power Supplies Power Supply Fault Protection

Contextual Info: VM 61214M V T C In c. Value the C ustom er 14-CHANNEL, MAGNETO-RESISTIVE HEAD, READ/WRITE PREAMPLIFIER WITH SERVO WRITE Mirror Version 950801 ADVANCE INFORMA TION FE A T U R E S • High Performance - Read Voltage Gain = 200 V/V Typical - Input Noise = 0.65 nV/VHz Typical

philips ecg master replacement guide

Abstract: smd transistor WW1 ecg philips semiconductor master book ww1 transistor smd philips ecg replacement guide fcs 9013 ECG transistor replacement guide book free data sheet NPN 9013 smd marking hry 32R2024
Contextual Info: STORAGE PRODUCTS REFERENCE GUIDE Market Number Channels Flip Flop Input Type Noise nV/Hz Write Current, mA Input Cap, pF Servo Enable Voltage Gain Damp Resistor Bandwidth MHz, Min. Package Min. Head Swing Vp-p R 5 & 12 Volt Thin Film Read/Write Preamps Rise time 7 ns, Head Swing 11 Vp-p, Power 235 mW