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HUF76121S3ST Price and Stock

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Rochester Electronics LLC HUF76121S3ST N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HUF76121S3ST	Bulk			606	1 - 10 - 100 - 1000 $0.5 10000 $0.5	Buy Now
Fairchild Semiconductor Corporation HUF76121S3ST 47A, 30V, 0.028ohm, N-Channel Power MOSFET, TO-263AB '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HUF76121S3ST		4,000		1	1 $0.4767 10 $0.4767 100 $0.4481 1000 $0.4052 10000 $0.4052	Buy Now

HUF76121S3ST Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
HUF76121S3ST		Fairchild Semiconductor	47 A, 30 V, 0.021 ohm, N-Channel, Logic Level UltraFET Power MOSFET		Original	PDF

HUF76121S3ST Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FQPF*7N65C APPLICATIONS Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM	Original	PDF	UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
76121P Abstract: 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334 Text: HUF76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	PDF	HUF76121P3, HUF76121S3S 1999ucts 76121P 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334
12SnOFC Abstract: PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532 Text: Date Created: 12/30/2003 Date Issued: 1/15/2004 PCN # 20040002 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will	Original	PDF	fairchildF76143S3S HUF76145S3S HUF76419S3ST HUF76432S3S HUF76439S3S HUF76445S3ST HUF76639S3S HUF76645S3ST ISL9N303AS3 ISL9N306AS3ST 12SnOFC PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532
76121P Abstract: 133E-9 Text: HUF76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	PDF	HUF76121P3, HUF76121S3S 76121P 133E-9
76121P Abstract: 121P3 HUF76121P3 HUF76121S3S HUF76121S3ST TB334 76121S 25E5 Text: HUF76121P3, HUF76121S3S Semiconductor Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs [ /Title are manufactured using the HUF76 innovative UltraFET process. 121P3, This advanced process technology	Original	PDF	HUF76121P3, HUF76121S3S HUF76 121P3, HUF76 121S3S low30V, HUF76121 76121P 121P3 HUF76121P3 HUF76121S3S HUF76121S3ST TB334 76121S 25E5
76121p Abstract: No abstract text available Text: HUF76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	PDF	HUF76121P3, HUF76121S3S 2002lopment. 76121p
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	PDF	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
76121P Abstract: 76121 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334 Text: HUF76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	PDF	HUF76121P3, HUF76121S3S 76121P 76121 76121S HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334
76121P Abstract: 76121S 76121 HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334 97E4 Text: HUF76121P3, HUF76121S3S Data Sheet 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	Original	PDF	HUF76121P3, HUF76121S3S 76121P 76121S 76121 HUF76121P3 AN9321 AN9322 HUF76121S3S HUF76121S3ST TB334 97E4
thermistor KSD201 Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM	Original	PDF	TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
76121S Abstract: 76121P TA761 Text: HUF76121P3, HUF76121S3, HUF76121S3S Semiconductor Data Sheet 49A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	PDF	HUF76121P3, HUF76121S3, HUF76121S3S O-263AB HUF76121S3S O-263AB 76121S 76121P TA761
76121P Abstract: 76121S Text: in t e la i I HUF76121P3, HUF76121S3S D a ta S h e e t 47A, 30V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channei power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	PDF	HUF76121P3, HUF76121S3S HUF76121S3S AN7254 AN7260. 76121P 76121S
76121P Abstract: No abstract text available Text: HUF76121P3, HUF76121S3S S em iconductor Data Sheet 47A, 30 V, 0.021 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,	OCR Scan	PDF	HUF76121P3, HUF76121S3S HUF76121 76121P