HN3C17F Search Results

Contextual Info: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)

HN3C17

Contextual Info: HN3C17F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C17F Unit in mm VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS 2.8 CHIP : fT = 16GHz series • Including Two Devices in SM6 (Super Mini Type with 6 Leads) + 0.2 0.3 - + 0.2 1 .6 -0 .1

HN3C17FU

Contextual Info: TOSHIBA HN3C17FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU V H F -U H F LO W NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain : |S2l e|2= 9.0dB (f=2GHz) M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : NF=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)

HN3C17F

Abstract: TOSHIBA IC 2803 E33 marking
Contextual Info: TOSHIBA TENTATIVE HN3C17F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C 17F VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Including Two Devices in SM6 (Super Mini Type with 6 Leads) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TOSHIBA TENTATIVE HN3C17FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF=1.3dB (f=2GHz) • High Gain : |S2 l e|2= 9.0dB (f=2GHz) 2.1 +0.1 MAXIMUM RATINGS (Ta = 25°C)

HN3C17FU

Contextual Info: TO SH IBA TENTATIVE HN3C17FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU VHF-UHF LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain : |S2l e|2= 9.0dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C)

Silicon NPN Epitaxial Planar Type

Contextual Info: TOSHIBA HN3C17FU TENTATIVE TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU V H F -U H F LO W NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain : |S2l e|2= 9.0dB (f=2GHz) M A X IM U M RATINGS (Ta = 25°C)

2SK3075 equivalent

Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Contextual Info: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz