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    onsemi SHN1B01FDW1T1G

    TRANS NPN/PNP 50V 0.2A SC74
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    onsemi HN1B01FDW1T1G

    TRANS NPN/PNP 50V 0.2A SC74
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    Toshiba America Electronic Components HN1B01FU-Y,LXHF

    AUTO AEC-Q PNP + NPN TR VCEO:-50
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    Toshiba America Electronic Components HN1B01FU-GR,LXHF

    AUTO AEC-Q PNP + NPN TR VCEO:-50
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    Toshiba America Electronic Components HN1B01FU-GR,LF

    TRANS NPN/PNP 50V 0.15A US6-PLN
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    HN1B01F Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN1B01F Toshiba Complementary Monolithic Transistor Pair Original PDF
    HN1B01F Toshiba HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3N1A, SM6, 6 PIN, BIP General Purpose Small Signal Original PDF
    HN1B01F Toshiba Japanese - Transistors Original PDF
    HN1B01F Toshiba Transistors Original PDF
    HN1B01FDW1T1 On Semiconductor Complementary Dual General Purpose Amplifier Transistor Original PDF
    HN1B01FDW1T1 On Semiconductor Complementary Dual General Purpose Amplifier Transistor Original PDF
    HN1B01FDW1T1-D On Semiconductor Complementary Dual General Purpose Amplifier Trans Original PDF
    HN1B01FDW1T1G On Semiconductor Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount Original PDF
    HN1B01F-GR Toshiba HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3N1A, SM6, 6 PIN, BIP General Purpose Small Signal Original PDF
    HN1B01FGRTE85L Toshiba HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1B01F-GR(TE85L,F Toshiba Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN PNP/NPN -50V -0.15A SM6 Original PDF
    HN1B01FGRTE85N Toshiba HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1B01FGRTE85R Toshiba HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1B01FTE85L Toshiba HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1B01FTE85N Toshiba HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1B01FTE85R Toshiba HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    HN1B01FU Toshiba Silicon NPN Epitaxial Type (PCT Process) Original PDF
    HN1B01FU Toshiba Japanese - Transistors Original PDF
    HN1B01FU Toshiba NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) Scan PDF
    HN1B01FUGR Toshiba TRANS GP BJT PNP NPN 50V 0.15A 6(2-2J1A) Original PDF

    HN1B01F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HN1B01F

    Abstract: No abstract text available
    Text: HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio-Frequency General-Purpose Amplifier Applications Unit: mm Q1: z High voltage and high current : VCEO = −50 V, IC = −150 mA (max)


    Original
    PDF HN1B01F HN1B01F

    HN1B01FU

    Abstract: No abstract text available
    Text: HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: z High voltage and high current : VCEO = −50V, IC = −150mA (max)


    Original
    PDF HN1B01FU -150mA 150mA HN1B01FU

    Untitled

    Abstract: No abstract text available
    Text: HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: High voltage and high current : VCEO = −50V, IC = −150mA (max)


    Original
    PDF HN1B01FU -150mA 150mA 100mA,

    HN1B01FDW1T1

    Abstract: 318F SMD310
    Text: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A


    Original
    PDF HN1B01FDW1T1 200X400 HN1B01FDW1T1/D HN1B01FDW1T1 318F SMD310

    Untitled

    Abstract: No abstract text available
    Text: HN1B01FDW1T1G, HN1B01FDW1T1G Complementary Dual General Purpose Amplifier Transistor http://onsemi.com PNP and NPN Surface Mount Features • • • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1


    Original
    PDF HN1B01FDW1T1G, SHN1B01FDW1T1G 200X400 AEC-Q101 SC-74 HN1B01FDW1T1/D

    Untitled

    Abstract: No abstract text available
    Text: HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio-Frequency General-Purpose Amplifier Applications Unit: mm Q1: z High voltage and high current : VCEO = −50 V, IC = −150 mA (max)


    Original
    PDF HN1B01F

    Untitled

    Abstract: No abstract text available
    Text: HN1B01FDW1T1G, HN1B01FDW1T1G Complementary Dual General Purpose Amplifier Transistor http://onsemi.com PNP and NPN Surface Mount Features • • • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1


    Original
    PDF HN1B01FDW1T1G, SHN1B01FDW1T1G 200X400 HN1B01FDW1T1/D

    318F

    Abstract: HN1B01FDW1T1 SMD310
    Text: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating – Human Body Model: 3A


    Original
    PDF HN1B01FDW1T1 200X400 r14525 HN1B01FDW1T1/D 318F HN1B01FDW1T1 SMD310

    HN1B01FU

    Abstract: No abstract text available
    Text: HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: z High voltage and high current : VCEO = −50V, IC = −150mA (max)


    Original
    PDF HN1B01FU -150mA 150mA HN1B01FU

    Untitled

    Abstract: No abstract text available
    Text: HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: High voltage and high current : VCEO = −50V, IC = −150mA (max) High hFE : hFE = 120~400


    Original
    PDF HN1B01F -150mA 150mA 000707EAA2

    HN1B01FU

    Abstract: No abstract text available
    Text: HN1B01FU 東芝トランジスタ シリコンPNP・NPNエピタキシャル形 PCT方式 HN1B01FU ○ 低周波増幅用 単位: mm Q1 z z z z 高耐圧です。 : VCEO = -50V コレクタ電流が大きい。 : IC = -150mA (最大) 電流増幅率が高い。


    Original
    PDF HN1B01FU 150mA 100mA, HN1B01FU

    318F

    Abstract: HN1B01FDW1T1 HN1B01FDW1T1G
    Text: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features • • • • • 6 High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1


    Original
    PDF HN1B01FDW1T1 200X400 SC-74 HN1B01FDW1T1/D 318F HN1B01FDW1T1 HN1B01FDW1T1G

    Untitled

    Abstract: No abstract text available
    Text: HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit: mm Q1: z High voltage and high current : VCEO = −50V, IC = −150mA (max)


    Original
    PDF HN1B01FU 150mA

    HN1B01F

    Abstract: No abstract text available
    Text: HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: l High voltage and high current : VCEO = −50V, IC = −150mA (max)


    Original
    PDF HN1B01F -150mA 150mA 000707EAA2 HN1B01F

    HN1B01F

    Abstract: No abstract text available
    Text: HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio-Frequency General-Purpose Amplifier Applications Unit: mm Q1: z High voltage and high current : VCEO = −50 V, IC = −150 mA (max)


    Original
    PDF HN1B01F HN1B01F

    On Semiconductor MARKING DIAGRAM SOD-123

    Abstract: No abstract text available
    Text: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A


    Original
    PDF HN1B01FDW1T1 200X400 SC-74 On Semiconductor MARKING DIAGRAM SOD-123

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TO SH IB A TRANSISTOR HN1B01FU SILICON PNP E PITA XIA L TYPE PCT PROCESS SILICON NPN E P ITA X IA L TYPE (PCT PROCESS) H N 1 B 01 F U Unit in mm A U D IO FR E Q U E N C Y G E N E R A L PURPOSE A M P L IF IE R A P P L IC A T IO N S . 2 . 1± 0.1


    OCR Scan
    PDF HN1B01FU 150mA

    transistor con HFE 400

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR HN1B01F SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) H N 1 B0 1 F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER + 0.2 2.8-0.3 APPLICATIONS. + 0.2 1 .6 - 0 .1 3- Ql : • High Voltage and High Current


    OCR Scan
    PDF HN1B01F 150mA CL25L HN1B01F transistor con HFE 400

    ic audio axign

    Abstract: No abstract text available
    Text: TOSHIBA HN1B01F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HN1RÍ11F AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. Ql ! High Voltage and High C urrent ». Axign u : VC E O = - 50V> IC = -1 5 0 m A (Max.)


    OCR Scan
    PDF HN1B01F 150mA ic audio axign

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TOSHIBA TRANSISTOR HN1B01F SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HN1B01F U nit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER 2 .8 APPLICATIONS. 1. 6 + 0.2 - 0.3 + 0.2 - 0.1 !• Ql : oo t-EB 2 High Voltage and High C urrent


    OCR Scan
    PDF HN1B01F 150mA

    transistor 1047 BL 1

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TY PE HN1B01F U nit in mm A U D IO FREQU ENCY G ENERA L PURPOSE AMPLIFIER + 0.2 2.8-0.3 APPLICATIONS. + 0.2 1.6-0.1 Q Q1 : —El2 -E33 • High Voltage and High Current : V q e o = _ 50V, I q = —150mA Max. • High hjrg : h]TE = 120~400


    OCR Scan
    PDF HN1B01F --150mA 150mA transistor 1047 BL 1

    Untitled

    Abstract: No abstract text available
    Text: HN1B01FU SILICON PNP EPITAXIAL PLANAR TYPE SILICON NPN EPITAXIAL PLANAR TYPE U n it in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. Q1 : • High Voltage and High Current : V q e o = -5 0 V , I q = - 150mA Max. • High hpE : ^FE = 120~400


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    PDF HN1B01FU 150mA

    TRANSISTOR MARKING TE US6

    Abstract: 125H HN1B01FU
    Text: T O S H IB A TOSHIBA TRANSISTOR HN1B01FU SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) H N 1 B 01 FU Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2 . 1± 0.1 Q1 : • High Voltage and High Current : VCEO = —50V, I q = —150mA (Max.)


    OCR Scan
    PDF HN1B01FU 150mA TRANSISTOR MARKING TE US6 125H HN1B01FU

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TOSHIBA TRANSISTOR HN1B01FU SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) H N 1 R fl 1 F 11 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2.1± 0.1 1.2 5 ±0.1 Q1 : • High Voltage and High. Current


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    PDF HN1B01FU --50V, --150mA 150mA