HN1B01F Search Results

HN1B01F Price and Stock

Filter by Manufacturer


Rochester Electronics LLC HN1B01FDW1T1G TRANS NPN/PNP 50V 200MA SC74
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN1B01FDW1T1G	Bulk	39,182		7,474	1 - 10 - 100 - 1000 - 10000 $0.04	Buy Now
Rochester Electronics LLC HN1B01FDW1T1 TRANS NPN/PNP 50V 200MA SC74
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN1B01FDW1T1	Bulk	17,980		11,539	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Toshiba America Electronic Components HN1B01FU-Y(L,F,T) TRANS NPN/PNP 50V 150MA US6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	HN1B01FU-Y(L,F,T)	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	HN1B01FU-Y(L,F,T)	Digi-Reel			1	1 $0.31 10 $0.31 100 $0.31 1000 $0.31 10000 $0.31	Buy Now
	HN1B01FU-Y(L,F,T)	Cut Tape			1	1 $0.31 10 $0.31 100 $0.31 1000 $0.31 10000 $0.31	Buy Now
onsemi SHN1B01FDW1T1G Trans GP BJT NPN/PNP 50V 0.2A 6-Pin SC-74 T/R - Tape and Reel (Alt: SHN1B01FDW1T1G)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SHN1B01FDW1T1G	Reel		0 Weeks, 2 Days	20,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SHN1B01FDW1T1G	Reel		8 Weeks	21,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	SHN1B01FDW1T1G		3,428			1 $0.26 10 $0.16 100 $0.1 1000 $0.064 10000 $0.038	Buy Now
Newark	SHN1B01FDW1T1G	Reel			9,000	1 - 10 - 100 - 1000 - 10000 $0.054	Buy Now
Rochester Electronics	SHN1B01FDW1T1G		1,000		1	1 $0.034 10 $0.034 100 $0.032 1000 $0.0289 10000 $0.0289	Buy Now
Avnet Asia	SHN1B01FDW1T1G			8 Weeks	21,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Avnet Silica	SHN1B01FDW1T1G			9 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	SHN1B01FDW1T1G			10 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	SHN1B01FDW1T1G		272,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi HN1B01FDW1T1G Trans GP BJT NPN/PNP 50V 0.2A 6-Pin SC-74 T/R - Tape and Reel (Alt: HN1B01FDW1T1G)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	HN1B01FDW1T1G	Reel		10 Weeks	18,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	HN1B01FDW1T1G		5,052			1 $0.29 10 $0.175 100 $0.11 1000 $0.072 10000 $0.043	Buy Now
Verical	HN1B01FDW1T1G		204,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.0397	Buy Now
	HN1B01FDW1T1G		21,000		9,147	1 - 10 - 100 - 1000 - 10000 $0.041	Buy Now
	HN1B01FDW1T1G		15,000		9,147	1 - 10 - 100 - 1000 - 10000 $0.041	Buy Now
Newark	HN1B01FDW1T1G	Cut Tape	1,988		5	1 $0.26 10 $0.18 100 $0.123 1000 $0.123 10000 $0.123	Buy Now
	HN1B01FDW1T1G	Reel			6,000	1 - 10 - 100 - 1000 - 10000 $0.061	Buy Now
Onlinecomponents.com	HN1B01FDW1T1G					1 - 10 - 100 - 1000 - 10000 $0.0381	Buy Now

Bristol Electronics	HN1B01FDW1T1G		23,171			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	HN1B01FDW1T1G		18,536			1 $0.275 10 $0.275 100 $0.275 1000 $0.275 10000 $0.055	Buy Now
Rochester Electronics	HN1B01FDW1T1G		39,182		1	1 $0.0386 10 $0.0386 100 $0.0363 1000 $0.0328 10000 $0.0328	Buy Now
Chip 1 Exchange	HN1B01FDW1T1G		2,096			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	HN1B01FDW1T1G		6,000	10 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.04825	Buy Now
Avnet Silica	HN1B01FDW1T1G			11 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	HN1B01FDW1T1G		51,000	12 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	HN1B01FDW1T1G		200,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	HN1B01FDW1T1G		42,000		1	1 - 10 - 100 - 1000 - 10000 $0.15	Buy Now
Vyrian	HN1B01FDW1T1G		19,642			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Wuhan P&S	HN1B01FDW1T1G		1,613		1	1 $0.097 10 $0.097 100 $0.0619 1000 $0.0469 10000 $0.0469	Buy Now

Find more HN1B01F price and stock on Findchips.com

HN1B01F Datasheets (43)

Part	Manufacturer	Description	Datasheet Type	PDF
HN1B01F	Toshiba	Complementary Monolithic Transistor Pair	Original	PDF
HN1B01F	Toshiba	HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3N1A, SM6, 6 PIN, BIP General Purpose Small Signal	Original	PDF
HN1B01F	Toshiba	Japanese - Transistors	Original	PDF
HN1B01F	Toshiba	Transistors	Original	PDF
HN1B01FDW1T1	On Semiconductor	Complementary Dual General Purpose Amplifier Transistor	Original	PDF
HN1B01FDW1T1	On Semiconductor	Complementary Dual General Purpose Amplifier Transistor	Original	PDF
HN1B01FDW1T1-D	On Semiconductor	Complementary Dual General Purpose Amplifier Trans	Original	PDF
HN1B01FDW1T1G	On Semiconductor	Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount	Original	PDF
HN1B01F-GR	Toshiba	HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3N1A, SM6, 6 PIN, BIP General Purpose Small Signal	Original	PDF
HN1B01FGRTE85L	Toshiba	HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
HN1B01F-GR(TE85L,F	Toshiba	Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN PNP/NPN -50V -0.15A SM6	Original	PDF
HN1B01FGRTE85N	Toshiba	HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
HN1B01FGRTE85R	Toshiba	HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
HN1B01FTE85L	Toshiba	HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF

HN1B01FTE85N	Toshiba	HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
HN1B01FTE85R	Toshiba	HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal	Original	PDF
HN1B01FU	Toshiba	Silicon NPN Epitaxial Type (PCT Process)	Original	PDF
HN1B01FU	Toshiba	Japanese - Transistors	Original	PDF
HN1B01FU	Toshiba	NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)	Scan	PDF
HN1B01FUGR	Toshiba	TRANS GP BJT PNP NPN 50V 0.15A 6(2-2J1A)	Original	PDF

HN1B01F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
HN1B01F Abstract: No abstract text available Text: HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio-Frequency General-Purpose Amplifier Applications Unit: mm Q1: z High voltage and high current : VCEO = −50 V, IC = −150 mA (max)	Original	HN1B01F HN1B01F	PDF
HN1B01FU Abstract: No abstract text available Text: HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: z High voltage and high current : VCEO = −50V, IC = −150mA (max)	Original	HN1B01FU -150mA 150mA HN1B01FU	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A TO SH IB A TRANSISTOR HN1B01FU SILICON PNP E PITA XIA L TYPE PCT PROCESS SILICON NPN E P ITA X IA L TYPE (PCT PROCESS) H N 1 B 01 F U Unit in mm A U D IO FR E Q U E N C Y G E N E R A L PURPOSE A M P L IF IE R A P P L IC A T IO N S . 2 . 1± 0.1	OCR Scan	HN1B01FU 150mA	PDF
Untitled Abstract: No abstract text available Text: HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: High voltage and high current : VCEO = −50V, IC = −150mA (max)	Original	HN1B01FU -150mA 150mA 100mA,	PDF
HN1B01FDW1T1 Abstract: 318F SMD310 Text: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A	Original	HN1B01FDW1T1 200X400 HN1B01FDW1T1/D HN1B01FDW1T1 318F SMD310	PDF
Untitled Abstract: No abstract text available Text: HN1B01FDW1T1G, HN1B01FDW1T1G Complementary Dual General Purpose Amplifier Transistor http://onsemi.com PNP and NPN Surface Mount Features • • • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1	Original	HN1B01FDW1T1G, SHN1B01FDW1T1G 200X400 AEC-Q101 SC-74 HN1B01FDW1T1/D	PDF
transistor con HFE 400 Abstract: No abstract text available Text: TOSHIBA TOSHIBA TRANSISTOR HN1B01F SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) H N 1 B0 1 F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER + 0.2 2.8-0.3 APPLICATIONS. + 0.2 1 .6 - 0 .1 3- Ql : • High Voltage and High Current	OCR Scan	HN1B01F 150mA CL25L HN1B01F transistor con HFE 400	PDF
Untitled Abstract: No abstract text available Text: HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio-Frequency General-Purpose Amplifier Applications Unit: mm Q1: z High voltage and high current : VCEO = −50 V, IC = −150 mA (max)	Original	HN1B01F	PDF
Untitled Abstract: No abstract text available Text: HN1B01FDW1T1G, HN1B01FDW1T1G Complementary Dual General Purpose Amplifier Transistor http://onsemi.com PNP and NPN Surface Mount Features • • • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1	Original	HN1B01FDW1T1G, SHN1B01FDW1T1G 200X400 HN1B01FDW1T1/D	PDF
318F Abstract: HN1B01FDW1T1 SMD310 Text: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating – Human Body Model: 3A	Original	HN1B01FDW1T1 200X400 r14525 HN1B01FDW1T1/D 318F HN1B01FDW1T1 SMD310	PDF
HN1B01FU Abstract: No abstract text available Text: HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: z High voltage and high current : VCEO = −50V, IC = −150mA (max)	Original	HN1B01FU -150mA 150mA HN1B01FU	PDF
ic audio axign Abstract: No abstract text available Text: TOSHIBA HN1B01F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HN1RÍ11F AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. Ql ! High Voltage and High C urrent ». Axign u : VC E O = - 50V> IC = -1 5 0 m A (Max.)	OCR Scan	HN1B01F 150mA ic audio axign	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA TOSHIBA TRANSISTOR HN1B01F SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HN1B01F U nit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER 2 .8 APPLICATIONS. 1. 6 + 0.2 - 0.3 + 0.2 - 0.1 !• Ql : oo t-EB 2 High Voltage and High C urrent	OCR Scan	HN1B01F 150mA	PDF
Untitled Abstract: No abstract text available Text: HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: High voltage and high current : VCEO = −50V, IC = −150mA (max) High hFE : hFE = 120~400	Original	HN1B01F -150mA 150mA 000707EAA2	PDF

Untitled Abstract: No abstract text available Text: HN1B01FU SILICON PNP EPITAXIAL PLANAR TYPE SILICON NPN EPITAXIAL PLANAR TYPE U n it in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. Q1 : • High Voltage and High Current : V q e o = -5 0 V , I q = - 150mA Max. • High hpE : ^FE = 120~400	OCR Scan	HN1B01FU 150mA	PDF
HN1B01FU Abstract: No abstract text available Text: HN1B01FU 東芝トランジスタシリコンPNP･NPNエピタキシャル形 PCT方式 HN1B01FU ○ 低周波増幅用単位: mm Q1 z z z z 高耐圧です。 : VCEO = －50V コレクタ電流が大きい。 : IC = －150mA (最大) 電流増幅率が高い。	Original	HN1B01FU 150mA 100mA, HN1B01FU	PDF
318F Abstract: HN1B01FDW1T1 HN1B01FDW1T1G Text: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features • • • • • 6 High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1	Original	HN1B01FDW1T1 200X400 SC-74 HN1B01FDW1T1/D 318F HN1B01FDW1T1 HN1B01FDW1T1G	PDF
Untitled Abstract: No abstract text available Text: HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit: mm Q1: z High voltage and high current : VCEO = −50V, IC = −150mA (max)	Original	HN1B01FU 150mA	PDF
TRANSISTOR MARKING TE US6 Abstract: 125H HN1B01FU Text: T O S H IB A TOSHIBA TRANSISTOR HN1B01FU SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) H N 1 B 01 FU Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2 . 1± 0.1 Q1 : • High Voltage and High Current : VCEO = —50V, I q = —150mA (Max.)	OCR Scan	HN1B01FU 150mA TRANSISTOR MARKING TE US6 125H HN1B01FU	PDF
HN1B01F Abstract: No abstract text available Text: HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: l High voltage and high current : VCEO = −50V, IC = −150mA (max)	Original	HN1B01F -150mA 150mA 000707EAA2 HN1B01F	PDF
HN1B01F Abstract: No abstract text available Text: HN1B01F 東芝トランジスタシリコンPNP・NPNエピタキシャル形 PCT方式 HN1B01F ○ 低周波増幅用単位: mm Q1 z z z z 高耐圧です。 : VCEO = －50V コレクタ電流が大きい。 : IC = －150mA (最大) 電流増幅率が高い。	Original	HN1B01F 150mA 100mA, HN1B01F	PDF
HN1B01F Abstract: No abstract text available Text: HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio-Frequency General-Purpose Amplifier Applications Unit: mm Q1: z High voltage and high current : VCEO = −50 V, IC = −150 mA (max)	Original	HN1B01F HN1B01F	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TOSHIBA TRANSISTOR HN1B01FU SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) H N 1 R fl 1 F 11 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2.1± 0.1 1.2 5 ±0.1 Q1 : • High Voltage and High. Current	OCR Scan	HN1B01FU --50V, --150mA 150mA	PDF
On Semiconductor MARKING DIAGRAM SOD-123 Abstract: No abstract text available Text: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A	Original	HN1B01FDW1T1 200X400 SC-74 On Semiconductor MARKING DIAGRAM SOD-123	PDF

HN1B01F Search Results

HN1B01F Price and Stock

Rochester Electronics LLC HN1B01FDW1T1G

Rochester Electronics LLC HN1B01FDW1T1

Toshiba America Electronic Components HN1B01FU-Y(L,F,T)

onsemi SHN1B01FDW1T1G

onsemi HN1B01FDW1T1G

HN1B01F Datasheets (43)

HN1B01F Datasheets Context Search

HN1B01F

HN1B01FU

Untitled

Untitled

HN1B01FDW1T1

Untitled

transistor con HFE 400

Untitled

Untitled

318F

HN1B01FU

ic audio axign

Untitled

Untitled

Untitled

HN1B01FU

318F

Untitled

TRANSISTOR MARKING TE US6

HN1B01F

HN1B01F

HN1B01F

Untitled

On Semiconductor MARKING DIAGRAM SOD-123