HM100 Search Results

Contextual Info: HM100484-10 Preliminary 4096-wrod x 4-bit Fully Decoded Random Access Memory The H M 100484 is E C L 100k com patible, 4096-words by 4-bits read/write random access memory developed fo r high speed systems such as acratch pads and control/b uffer storage.

Contextual Info: HM100504 Series- Preliminary 65,536-Words x 4-Bit Random Access Memory • DESCRIPTION The Hitachi HM100504 is ECL 100k compatible, 65,536 words by 4 bits read/write random access memory developed for high speed systems such as cache and control/buffer storage.

Contextual Info: HM100500 Seríes P r e lim in a r y 262,144-Word x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM100500CG-18 is EC L 100K compatible, 262,144-word x 1-bit, read/write random access memory developed for high speed systems such as main memories for super computers.

64 PIN CERDIP

Contextual Info: HONEYWELL DIGITAL PRODUCT bb D E * 4SS14S3 0000050 b • ■ ■ RAD HARD ECL/TTL GATE ARRAY PRODUCT DESCRIPTION The HM1000R Gate Array Figure 1 is an 800 pico­ second, 1000 equivalent gate density LSI monolithic integrated circuit built using Honeywell’s radiation

Fairchild F8

Contextual Info: HM100474-8, HM100474-10-HM100474F-8, HM100474F-10 1 0 2 4 - w ord X 4 - b i t Fully D eco ded R andom Access M em o ry The H M 1 0 0 4 7 4 is ECL 100k com patible, 1024-words x 4-bit, read H M 1 0 0 4 7 4 -8 , H M 1 0 0 4 7 4 -1 0 w rite, random access m em ory developed fo r high speed systems such

Contextual Info: H M 100470 4 0 9 6 - word x 1-b it Fully Decoded Random A ccess Memory The HM100470 is a 4096-words x 1-bit, read/write, random access memory developed for high speed systems such as scratch pads and control buffer storages. The fabrication process is the Hitachi's low capacitance, oxide

Contextual Info: HM100470 4 0 9 6 - w o rd * 1 - b i t Fully D e co d e d Ra n d o m Access M e m o r y The H M 1 0 0 4 7 0 is a 4096-w ords x 1-bit, read /w rite, random access m em ory developed fo r high speed systems such as scratch pads and control bu ffer storages. The fabrication

D1323

Abstract: 100484
Contextual Info: HM100484-10 Preliminary 4096-wrod x 4-bit Fully Decoded Random Access Memory The H M 100484 is E C L 100k compatible, 4096-words by 4-bits read/write random access memory developed for high speed systems such as acratch pads and control/buffer storage. Features

HI431

Abstract: DELL power supply diagram
Contextual Info: HM100514 Series -Preliminary 262,144-words x 4-bit Fully Decoded Random Access Memory • DESCRIPTION The HM100514 is ECL 100k compatible, 262,144words by 4-bits read/write random access memory developed for high speed systems such as scratch pads and control/buffer storage.

HM101494-10

Abstract: HM101494-12
Contextual Info: HM100494/HM101494 Series 16384-word x 4-bit Fully Decoded Random Access Memory The HM100494/HM101494 are ECL 100K compatible, 16384-word by 4-bit read/write random access memory developed for high speed systems such as scratch pads and control/buffer storage.

Contextual Info: H M 1 0 0 5 1 0 S e r i e s - Preliminary 1,046,576-words x 1-Bit Random Access Memory • DESCRIPTION The Hitachi HM100510 is ECL 100k compatible, 1,048,576 w ords by 1 bit read/write random access m em ory developed for high speed systems.

Contextual Info: HM100494 Series 16384-word x 4-blt Fully Decoded Random Access Memory Description The HM 100494 is ECL 100K compatible, 16384-word by 4-bits read/write random access memory developed for high speed systems such as scratch pads and control/buffer storage. Features

Contextual Info: HM100490 Series —P re lim in a ry 65536-Words x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM100490 is ECL 100K compatible, 65536-words by 1-bit read/write random access memory developed for high speed sys­ tems such as scratch pads and control/buffer storage.

FG20D

Contextual Info: HM1004-80-15, HM100480F-15 16,384-words x 1-bit Fully Decoded Random Access Memory The HM 100480-15 is ECL 100K compatible, 16,384-words x 1-bit, read/write random access memory developed for high speed systems such as scratch pads and control/buffer storages.

100480

Contextual Info: HM100480, HM100480F Preliminary 1 6 ,3 8 4 -w o r d s x i-b it Fully Decoded Random A ccess Memory The H M 100480 is ECL 100K compatible, 16,384-words x 1-bit, read/write random access memory developed for high speed systems such as scratch pads and control/buffer storages.

Contextual Info: HM100-251R0LF summary material content, BI Technologies Corporation Index Item Material Name E CORE Iron Powder I CORE Iron Powder 1 2 3 4 ADHESIVE COIL SOLDER Epoxy Resin Enamelled Copper Wire Lead Free Solder Element Composition CAS No Fe2O3 MnO ZnO Others

Contextual Info: H M 10 0 5 0 0 C G “1 8 — P relim inary 262,144-Word x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM100500CG-18 is ECL 100K compatible, 262,144-word x 1-bit, read/write random access memory developed for high speed systems such as main memories for super computers.

EC 9410

Abstract: 12HM EC 9410 -F
Contextual Info: HM100404 S rÌ©S — Preliminary 16384-word x 4-bit Fully Decoded Random Access Memory The HM10 0 4 9 4 is EC L 100K compatible, 16384-w ord by 4-bits read/write random access memory developedfor high speed systems such as scratch pads and control/buffer storage.

Contextual Info: HM100500 Series Preliminary 262,144-Word x 1-Bit Fully Decoded Random Access Memory • DESCRIPTION The HM100500CG-18 is ECL 100K compatible, 262,144-word x 1-bit, read/write random access memory developed for high speed systems such as main memories for super computers.

00422

Abstract: hitachi ha-1
Contextual Info: HM100422,HM 100422 F HM 100422CG 2 5 6 - w o r d x 4 - b i t Fully D e coded Random Access M e m o r y The HM100422 is ECL 100K compatible, 256-word x 4-bit, read write, random access memory developed for high speed system such as scratch pads and control/buffer storages.

RTF20

Contextual Info: HM100514 Series -Preliminary 262,144-words x 4-bit Fully Decoded Random Access Memory • DESCRIPTION The HM100514 is ECL 100k compatible, 262,144words by 4-bits read/write random access memory developed for high speed systems such as scratch pads and control/buffer storage.

Contextual Info: HM100490-15- Preliminary 65536-words x 1-bit Fully Decoded Random Access Memory HM100490-15 is ECL 100k compatible, 65536-words % 1-bit, read/write random access memory developed for high speed systems such as main memories for super computers.

15ASTOP

Abstract: HM100
Contextual Info: HITACHI/ LOGIC/ARRAYS/MEM S'lE D • 4M=ib203 OOlbbb'l 3 ■ H M 1 0 0 5 0 4 F - 1 0 / 1 2 — Preliminary 65536-Words x 4-Bit Fully Decoded Random A ccess Memory ■ PIN A R R A N G EM EN T ■ DE SC R IPTIO N The HM100504 is E C L 100K compatible, 65536-words by 4-bits

Contextual Info: HM100422.HM100422F HM 100422CG 2 5 6 - w o rd x 4 -b it Fully Decoded Random A c c e ss Memory HM100422 The HM100422 is ECU 100K compatible, 256-word x 4-bit, read write, random access memory developed for high speed system such as scratch pads and control/buffer storages.