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4SS14S3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
macrocell ecl Abstract: 4S514 Contextual Info: HONEYWELL DIGITAL PRODUCT bb dË J 4SS14S3 0000D43 *=1 T-42-11-13 JUNE 1985 ECL GATE ARRAY HE8000 PRO DUCT DESCRIPTION The HE8000 Gate Array Figure 1 is a 250 picosecond, 8000 equivalent gate density Very Large Scale Integra tion (VLSI) monolithic integrated circuit built using	OCR Scan	4SS14S3 0000D43 T-42-11-13 HE8000 HE8000 10K/KH macrocell ecl 4S514	PDF
U904 Abstract: U902 Contextual Info: - ;-:-ff HONEYWELL DIGITAL PRODUCT Lb D E 4SS14S3 OODOIOD b \| • ’ LSTTL GATE ARRAY —-:-_ T-42-11-15 MARCH 1985 HT5000 PRODUCT DESCRIPTION The HT5000 G ate A rray (Figure 1 is a 600 picosecond, 5000 equivalent gate density Very Large	OCR Scan	4SS14S3 T-42-11-15 HT5000 HT50Q0 QDD0117 T-42-11-15 085--March U904 U902	PDF
64 PIN CERDIP Contextual Info: HONEYWELL DIGITAL PRODUCT bb D E * 4SS14S3 0000050 b • ■ ■ RAD HARD ECL/TTL GATE ARRAY PRODUCT DESCRIPTION The HM1000R Gate Array Figure 1 is an 800 pico second, 1000 equivalent gate density LSI monolithic integrated circuit built using Honeywell’s radiation	OCR Scan	4SS14S3 T-42-11-15 HM1000R 10K/KH 45S14S3 HM1000R 64-Pin 64 PIN CERDIP	PDF
HM3500 Contextual Info: HONEYüJELL D I G I T A L P R O D U C T bt De \| 4 S S m S 3 □□0DD73 7 \| T-42-11-15 MAY 1985 HM3500 ECL/TTL GATE ARRAY PRELIMINARY PRODUCT DESCRIPTION The HM3500 Figure 1 is a 400 picosecond, 3500 equivalent gate density VLSI monolithic integrated circuit using Honeywell’s ADB-II fabrication process.	OCR Scan	0DD73 T-42-11-15 HM3500 10K/KH HM3500	PDF