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    Untitled

    Abstract: No abstract text available
    Text: HLXSR01608 2M x 8 STATIC RAM The monolithic 2M x 8 Radiation Hardened Static RAM is a high performance 2,097,152 word x 8-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low


    Original     		PDF HLXSR01608 150nm ADS-14218

    HLXSR01608

    Abstract: No abstract text available
    Text: HLXSR01608 HLXSR01608 2M x 8 STATIC RAM 1.5V Core VDD The HLXSR01608 radiation hardened 16Mbit Static proprietary design, layout and process hardening Random Access Memory SRAM is a monolithic techniques. There is no internal EDAC implemented. SRAM fabricated with Honeywell’s 150nm silicon-oninsulator CMOS (S150) technology. The 2M x 8 bit


    Original     		PDF HLXSR01608 HLXSR01608 16Mbit 150nm 110mW 40MHz

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Made changes to Table IA, parameters: IDDDOP3 , IDDDOP1, IDDDOPW1, IDDOPW40, IDDDOPW40, IDDOPR1, IDDDOPR1, IDDOPR40, IDDDOPR40, CINA, CINC. ksr 08-12-12 Robert M. Heber B Made changes to Table IA, parameters: Standby current CS disabled


    Original     		PDF IDDOPW40, IDDDOPW40, IDDOPR40, IDDDOPR40, MIL-PRF-38535 andLXSR01608-AQH 5962H0820202VXC HLXSR01608-AVH