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    HL6363MG Price and Stock

    Ushio Opto Semiconductors Inc HL6363MG-A

    640nm / 45mW AlGaInP Laser Diode - Trays (Alt: HL6363MG-A)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas HL6363MG-A Tray 397 18 Weeks 1
    • 1 $55.56
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    HL6363MG-A Tray 12 Weeks, 6 Days 22
    • 1 -
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    • 100 $56.7248
    • 1000 $44.9305
    • 10000 $44.9305
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    Ushio Opto Semiconductors Inc HL6363MG01-A

    Laser Diode AlGaInP 640nm 45mW 3-Pin Through Hole - Bulk (Alt: HL6363MG01-A)
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    Avnet Americas HL6363MG01-A Bulk 25
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    Ushio Opto Semiconductors Inc HL6363MG02

    - Bulk (Alt: HL6363MG02)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas HL6363MG02 Bulk 12 Weeks 50
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    Ushio Opto Semiconductors Inc HL6363MG98-A

    LASER DIODE - Rail/Tube (Alt: HL6363MG98-A)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas HL6363MG98-A Tube 10
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    HL6363MG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HL6363MG OpNext Low Operating Current Visible Laser Diode Original PDF

    HL6363MG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HL6362MG/63MG ODE2026-00 M Rev.0 Aug. 01, 2008 Low Operating Current Visible Laser Diode Description The HL6362MG/63MG are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser display, laser scanners and optical equipment for measurement.


    Original     		PDF HL6362MG/63MG HL6362MG/63MG ODE2026-00 HL6362MG/63MG: HL6362MG HL6363MG

    HL6362MG

    Abstract: HL6363MG
    Text: HL6362MG/63MG ODE-208-011E Z Rev.5 Apr. 14, 2006 Low Operating Current Visible Laser Diode Description The HL6362MG/63MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser display, laser scanners and optical equipment for measurement.


    Original     		PDF HL6362MG/63MG ODE-208-011E HL6362MG/63MG HL6362MG/63MG: HL6362MG HL6363MG HL6362MG HL6363MG

    Untitled

    Abstract: No abstract text available
    Text: HL6362MG/63MG ODE-208-011F Z Rev.6 Feb. 01, 2008 Low Operating Current Visible Laser Diode Description The HL6362MG/63MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser display, laser scanners and optical equipment for measurement.


    Original     		PDF HL6362MG/63MG ODE-208-011F HL6362MG/63MG HL6362MG/63MG: HL6362MG HL6363MG

    LD5033

    Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
    Text: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet


    Original     		PDF OPD-010908 LD5033 opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G

    Untitled

    Abstract: No abstract text available
    Text: HL6362MG/63MG ODE-208-011E Z Rev.5 Apr. 14, 2006 Low Operating Current Visible Laser Diode Description The HL6362MG/63MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser display, laser scanners and optical equipment for measurement.


    Original     		PDF HL6362MG/63MG HL6362MG/63MG ODE-208-011E HL6362MG/63MG: HL6362MG HL6363MG

    HL6362MG

    Abstract: HL6363MG 63MG
    Text: HL6362MG/63MG ODE-208-011E Z Rev.5 Apr. 14, 2006 Low Operating Current Visible Laser Diode Description The HL6362MG/63MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser display, laser scanners and optical equipment for measurement.


    Original     		PDF HL6362MG/63MG ODE-208-011E HL6362MG/63MG HL6362MG/63MG: HL6362MG HL6363MG HL6362MG HL6363MG 63MG

    laser diode 940 nM 200mW

    Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package
    Text: opnext 2005 / 2006 HITACHI OPTODEVICES Powered by opnext Powered by HITACHI Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, Opnext offers unique leading-edge optodevices in such areas as fiber optic communications, optical storage, and measuring instruments and encoders. Constant refinement of established technologies offer cutting-edge solutions to a wide variety of needs, providing the power to reshape our world and


    Original     		PDF 200mW laser diode 940 nM 200mW LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package

    HL6362MG

    Abstract: HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG
    Text: Oct. 2007 Guide for Red & Infrared Laser Diodes Line up Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and /or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a laser diode or collimated


    Original     		PDF 2008B D-85622 HL6362MG HL6355MG hl6344g HL6366DG HL6750MG HL6545MG HL6348MG opnext l HL6354MG HL8341MG