Untitled
Abstract: No abstract text available
Text: H I T A C H I / O P T O E L E C T R O N IC S 51E D • m ib B O S Q011023 ■ H IT M T - a P i'lS GN6020C Silicon N Channel IGBT HITACHI Application Mar. 1992 TO-3P High speed power switching Features • High speed switching tf = 200 ns typ, 400 ns max
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Q011023
GN6020C
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GN6030C
Abstract: No abstract text available
Text: HITACHI/ OPTOELECTRONICS SIE D GD11D30 WÊ «HIT4 ' T ^ 3 c ì - 1Z b GN6030C Silicon N Channel IGBT HITACHI Application Mar. 1992 TO—3P High speed power switching Features • High speed switching tf —200 ns typ, 400 ns max • Low on saturation voltage
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1b205
GN6030C
001103b
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GN6020C
Abstract: No abstract text available
Text: HITACHI / OPTOELECTRONICS 51E B m MMSbaOS GG11023 7‘t‘l • H I T M GN6020C Silicon N Channel IGBT HITACHI Application Mar. 1992 TO-3P High speed power switching Features • High speed switching tf = 200 ns typ, 400 ns max • Low on saturation voltage
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GG11023
GN6020C
T011020
001102T
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GN6050E
Abstract: Hitachi Scans-001
Text: HITACHI/< O P T O E L E C T R O N I C S SIE 1> • MM'ibSOS 0 0 1 1 0 3 7 S33 ■ H I T 4 13 <?-/& GN6050E Silicon N Channel IGBT HITACHI Application Mar. 1992 TO-3PL High speed power switching Features • High speed switching tf = 200 ns typ, 400 ns max
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GN6050E
TibH05
GG11042
GN6050E
DD11DM3
Hitachi Scans-001
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
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Untitled
Abstract: No abstract text available
Text: HITACHI/ O P T O E L E C T R O N I C S SIE D WÊ MMI b SO S G D 1 1 0 3 0 TAT • H I T 4 GN6030C Silicon N Channel IGBT HITACHI Application Mar. 1992 T O -3 P High speed power switching Features • High speed switching tf = 200 ns typ, 400 ns max • Low on saturation voltage
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GN6030C
OG11Q33
HIT47
GN6030C_
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