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Abstract: No abstract text available
Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode 2000 IXYS All rights reserved C1 - 1
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sd 20n60
Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06
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O-247
PLUS247
ISOPLUS247TM
O-268
O-264
80N06-11
76N07-11
76N07-12
100N10
170N10
sd 20n60
IXFX 44N80
20n80
60n60
9n80
C2625
power mosfet 100n20
IXFH32N50
230N10
8N80
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ZVT full bridge for welding
Abstract: ZVT full bridge arc welding rectifier ixfn56n90p IXFR zvt mosfet full bridge Ac/dc IXFV18N90P IXFV18N90PS IXFH18N90P ixfn*56N90P
Text: POWER Efficiency Through Technology N E W P R O D U C T B R I E F 900V Polar HiPerFETTM Power MOSFETs rugged, energy efficient mosfet solutions for power conversion systems january 2010 OVERVIEW IXYS expands its Polar HiPerFETTM MOSFET product portfolio with the introduction of its new 900V
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E153432)
com/IXAN0022
PBN90POLARHIPERFET
ZVT full bridge for welding
ZVT full bridge
arc welding rectifier
ixfn56n90p
IXFR
zvt mosfet full bridge Ac/dc
IXFV18N90P
IXFV18N90PS
IXFH18N90P
ixfn*56N90P
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Abstract: No abstract text available
Text: Preliminary Technical Information IXFB110N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = 600V 110A 56m 250ns PLUS264TM Symbol Test Conditions Maximum Ratings
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IXFB110N60P3
250ns
PLUS264TM
110N60P3
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Abstract: No abstract text available
Text: Preliminary Technical Information IXFB132N50P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = 500V 132A 39m 250ns PLUS264TM Symbol Test Conditions Maximum Ratings
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IXFB132N50P3
250ns
PLUS264TM
15NanoCoulombs
132N50P3
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Abstract: No abstract text available
Text: Advance Technical Information VDSS ID25 IXFP5N100PM PolarTM HiPerFETTM Power MOSFET RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.3A Ω ≤ 2.8Ω OVERMOLDED (IXFP.M) OUTLINE Symbol Test Conditions Maximum Ratings
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IXFP5N100PM
5N100P
7-13-A
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Abstract: No abstract text available
Text: Preliminary Technical Information IXFK520N075T2 IXFX520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFETs VDSS ID25 = = 75V 520A Ω 2.2mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions VDSS
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IXFK520N075T2
IXFX520N075T2
O-264
520N075T2
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IXFZ520N075T2
Abstract: No abstract text available
Text: Advance Technical Information IXFZ520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 465A Ω 1.3mΩ (Electrically Isolated Tab) DE475 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings
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IXFZ520N075T2
DE475
IXFZ520N075T2
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXFR44N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 25A Ω 154mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions
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IXFR44N50Q3
250ns
ISOPLUS247
E153432
44N50Q3
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32N80Q3
Abstract: No abstract text available
Text: Advance Technical Information IXFR32N80Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 800V 24A Ω 300mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions
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IXFR32N80Q3
300ns
ISOPLUS247
E153432
32N80Q3
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IXFR48N60Q3
Abstract: 6V01
Text: Advance Technical Information IXFR48N60Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 600V 32A Ω 154mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions
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IXFR48N60Q3
300ns
ISOPLUS247
E153432
48N60Q3
IXFR48N60Q3
6V01
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W6 13A Diode
Abstract: IXFA26N50P3 IXFQ26N50 IXFP26N50 ixfh26n50p3
Text: Advance Technical Information IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 Polar3TM HiperFETTM Power MOSFETs VDSS ID25 = 500V = 26A Ω ≤ 230mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) TO-220AB (IXFP)
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O-263
IXFA26N50P3
IXFP26N50P3
IXFQ26N50P3
IXFH26N50P3
O-220AB
O-247
O-220
W6 13A Diode
IXFQ26N50
IXFP26N50
ixfh26n50p3
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Abstract: No abstract text available
Text: Preliminary Technical Information IXFA26N50P3 IXFP26N50P3 IXFQ26N50P3 IXFH26N50P3 Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS ID25 = 500V = 26A 240m RDS on TO-220AB (IXFP) TO-263 AA (IXFA)
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IXFA26N50P3
IXFP26N50P3
IXFQ26N50P3
IXFH26N50P3
O-220AB
O-263
O-247
O-220
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132N50P3
Abstract: 66a 017
Text: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFL132N50P3 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 500V 63A Ω 43mΩ 250ns ISOPLUS264 Symbol Test Conditions
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IXFL132N50P3
250ns
ISOPLUS264
132N50P3
66a 017
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFR44N50Q3 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 25A Ω 154mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions
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IXFR44N50Q3
250ns
ISOPLUS247
E153432
44N50Q3
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Abstract: No abstract text available
Text: Advance Technical Information HiperFETTM Power MOSFET Q3-Class VDSS ID25 IXFR24N100Q3 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 1000V 18A Ω 490mΩ 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions
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IXFR24N100Q3
300ns
ISOPLUS247
E153432
150orward-Bias
24N100Q3
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Abstract: No abstract text available
Text: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFB210N30P3 RDS on trr = = ≤ ≤ 300V 210A Ω 14.5mΩ 250ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS
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IXFB210N30P3
250ns
PLUS264TM
100ms
210N30P3
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IXFK520N075T2
Abstract: 7v150 IXFX520N075T2 PLUS247
Text: Advance Technical Information IXFK520N075T2 IXFX520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = 75V 520A Ω 2.2mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings
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IXFK520N075T2
IXFX520N075T2
O-264
520N075T2
IXFK520N075T2
7v150
IXFX520N075T2
PLUS247
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information Polar3TM HiPerFETTM Power MOSFET IXFL210N30P3 VDSS ID25 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = 300V 108A 16m 250ns ISOPLUS264 Symbol Test Conditions
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IXFL210N30P3
250ns
ISOPLUS264
100ms
210N30P3
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MMIX1F520N075T2
Abstract: IXFZ520N075T2 ixfz520n075
Text: Advance Technical Information MMIX1F520N075T2 TrenchT2TM GigaMOSTM HiperFETTM Power MOSFET VDSS ID25 = = RDS on ≤ 75V 500A Ω 1.6mΩ (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions
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MMIX1F520N075T2
IXFZ520N075T2
MMIX1F520N075T2
IXFZ520N075T2
ixfz520n075
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IXFR44N50Q3
Abstract: 44N50Q3
Text: Preliminary Technical Information IXFR44N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr (Electrically Isolated Tab) = = ≤ ≤ 500V 25A Ω 154mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions
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IXFR44N50Q3
250ns
ISOPLUS247
E153432
44N50Q3
IXFR44N50Q3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXFB210N30P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = 300V 210A 14.5m 250ns PLUS264TM Symbol Test Conditions Maximum Ratings
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IXFB210N30P3
250ns
PLUS264TM
100ms
210N30P3
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1200 volt mosfet
Abstract: 1000 volt mosfet mosfet 300 volt HiperFET IXFN38N100 sot 227b diode fast transistor polar 2R4N120P IXFN44N100P IXFB44N100P
Text: IXYS POWER Efficiency through Technology NE W P R O D UCT B R I E F 1000V to 1200V Polar Standard and HiPerFET Power MOSFETs NEXT GENERATION N-CHANNEL POWER MOSFETS OCTOBER 2007 OVERVIEW These new 1000-1200V Standard and HiPerFETTM additions to the IXYS PolarTM Power MOSFET
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000-1200V
IXFB30N120P
IXFL30N120P
IXFN30N120P
IXFL32N120P
IXFN32N120P
PluS220
IXFV110N10PS
1200 volt mosfet
1000 volt mosfet
mosfet 300 volt
HiperFET
IXFN38N100
sot 227b diode fast
transistor polar
2R4N120P
IXFN44N100P
IXFB44N100P
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IXFB110N60P3
Abstract: No abstract text available
Text: Advance Technical Information IXFB110N60P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 600V 110A Ω 56mΩ 250ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS
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IXFB110N60P3
250ns
PLUS264TM
110N60P3
IXFB110N60P3
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