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IXYS Corporation CPC1709J Solid State Relays - PCB Mount DC Only Single Pole i4-PAC
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TTI	CPC1709J	Bulk	7,650		25	1 - 10 - 100 $5.68 1000 $5.2 10000 $5.2	Buy Now
IXYS Corporation CPC1916Y Solid State Relays - PCB Mount 100V Single Pole SIP Power Relay
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TTI	CPC1916Y	Bulk	450		25	1 - 10 - 100 $4.36 1000 $4.36 10000 $4.36	Buy Now
IXYS Corporation CPC1909J Solid State Relays - PCB Mount 60V Single Pole 60V Power Relay
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TTI	CPC1909J	Tube	325		25	1 - 10 - 100 $6.34 1000 $6.21 10000 $6.21	Buy Now
IXYS Corporation CPC1779J Solid State Relays - PCB Mount DC Only Single Pole i4-PAC
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TTI	CPC1779J	Tube	100		25	1 - 10 - 100 $10.54 1000 $9.59 10000 $9.59	Buy Now
IXYS Corporation CPC1727J Solid State Relays - PCB Mount DC Only Single Pole i4-PAC
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TTI	CPC1727J	Tube	75		25	1 - 10 - 100 $9.09 1000 $7.53 10000 $7.53	Buy Now

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ISOPLUS264 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ISOPLUS-264 Abstract: CPC1786J CPC1976Y ISOPLUS264 CPC1708J cpc1909 CPC1906Y CPC1709J CPC1978J CPC1916Y Contextual Info: Power Solid State Relays i4-PAC , ISOPLUS264, and the Power SIP Relays Features • Solid State Reliability • Handle loads up to 15Arms • Voltage ratings from 60V - 1000V • Low On Resistance • Compact i4-PAC™ Package with low thermal resistance and heat sink	Original	ISOPLUS264, 15Arms optically-coup264 Q1-05 ISOPLUS264 ISOPLUS-264 CPC1786J CPC1976Y ISOPLUS264 CPC1708J cpc1909 CPC1906Y CPC1709J CPC1978J CPC1916Y	PDF
70n60 Abstract: IXFL70N60Q2 Contextual Info: Preliminary Technical Information IXFL70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 600V 37A Ω 88mΩ 250ns ISOPLUS264	Original	IXFL70N60Q2 250ns ISOPLUS264 70N60Q2 8-08-A 70n60 IXFL70N60Q2	PDF
ixfn36n100 Contextual Info: HiPerFETTM Power MOSFETs IXFL 34N100 VDSS = 1000 V ID25 = 30 A ISOPLUS264TM RDS on = 0.28 Ω (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions	Original	34N100 ISOPLUS264TM IXFN36N100 728B1 123B1 065B1	PDF
44N80 Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS264TM IXFL 44N80 Electrically Isolated Backside VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions Maximum Ratings	Original	ISOPLUS264TM 44N80 728B1 123B1 728B1 065B1 44N80	PDF
Contextual Info: IXFL 60N80P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 800 V = 40 A Ω RDS on ≤ 150 mΩ ≤ 250 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	60N80P ISOPLUS264TM ISOPLUS264	PDF
132N50P3 Abstract: 66a 017 Contextual Info: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFL132N50P3 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 500V 63A Ω 43mΩ 250ns ISOPLUS264 Symbol Test Conditions	Original	IXFL132N50P3 250ns ISOPLUS264 132N50P3 66a 017	PDF
MOSFET 60n60 Abstract: 60N60 IXFL60N60 Z 728 Contextual Info: HiPerFETTM Power MOSFETs IXFL 60N60 VDSS ISOPLUS264TM = 600 V = 60 A Ω = 80 mΩ ID25 Electrically Isolated Backside RDS(on) Single Die MOSFET Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	60N60 ISOPLUS264TM 728B1 123B1 728B1 065B1 MOSFET 60n60 IXFL60N60 Z 728	PDF
IXFN39N90 Contextual Info: HiPerFETTM Power MOSFETs IXFL 39N90 VDSS ID25 ISOPLUS264TM RDS on t (Electrically Isolated Backside) Single Die MOSFET = 900 V = 34 A Ω = 220 mΩ < ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions	Original	39N90 ISOPLUS264TM IXFN39N90 728B1 123B1 728B1 065B1	PDF
100N50P Abstract: 100n50 S20NF Contextual Info: IXFL 100N50P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 500 V = 70 A Ω RDS on ≤ 52 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C	Original	100N50P ISOPLUS264TM ISOPLUS264 100N50P 100n50 S20NF	PDF
Contextual Info: Preliminary Technical Information Polar3TM HiPerFETTM Power MOSFET IXFL210N30P3 VDSS ID25 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   300V 108A  16m 250ns ISOPLUS264 Symbol Test Conditions	Original	IXFL210N30P3 250ns ISOPLUS264 100ms 210N30P3	PDF
Contextual Info: HiPerFETTM Power MOSFET ISOPLUS264TM VDSS = ID25 = RDS on ≤ IXFL34N100 1000V 30A Ω 280mΩ (Electrically Isolated Tab) Single-Die MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr ISOPLUS264 Symbol Test Conditions VDSS VDGR	Original	ISOPLUS264TM IXFL34N100 ISOPLUS264 IXFN36N100 338B2	PDF
IXFL34N100 Abstract: IXFN36N100 Contextual Info: IXFL34N100 HiPerFETTM Power MOSFET ISOPLUS264TM VDSS = ID25 = RDS on ≤ 1000V 30A Ω 280mΩ (Electrically Isolated Tab) Single-Die MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr ISOPLUS264 Symbol Test Conditions VDSS VDGR	Original	IXFL34N100 ISOPLUS264TM ISOPLUS264 00A/s IXFN36N100 338B2 IXFL34N100	PDF
Contextual Info: IXFL132N50P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   500V 63A  43m 250ns ISOPLUS264 Symbol Test Conditions Maximum Ratings VDSS	Original	IXFL132N50P3 250ns ISOPLUS264 132N50P3 K9-W38) 2-14-A	PDF
Contextual Info: Preliminary Technical Information IXFL132N50P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   500V 63A  43m 250ns ISOPLUS264 Symbol Test Conditions	Original	IXFL132N50P3 250ns ISOPLUS264 132N50P3	PDF

IXGL50N60BD1 Abstract: ixgl50n60 Contextual Info: HiPerFASTTM IGBT ISOPLUS264TM IXGL 50N60BD1 VCES IC25 VCE sat (Electrically Isolated Back Surface) tfi(typ) = 600 V = 75 A = 2.3 V = 85 ns Preliminary data sheet (D1) Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	ISOPLUS264TM 50N60BD1 IC110 ISOPLUS-264TM O-26rr 2x61-06A IXGL50N60BD1 ixgl50n60	PDF
IXFL38N100Q2 Abstract: 38N100 152AA Contextual Info: IXFL38N100Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 1000V 29A Ω 280mΩ 300ns ISOPLUS264TM( IXFL) Symbol Test Conditions Maximum Ratings VDSS	Original	IXFL38N100Q2 300ns ISOPLUS264TM( 38N100Q2 5-27-08-B IXFL38N100Q2 38N100 152AA	PDF
IXFL210N30P3 Contextual Info: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET IXFL210N30P3 VDSS ID25 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 300V 108A Ω 16mΩ 250ns ISOPLUS264 Symbol Test Conditions	Original	IXFL210N30P3 250ns ISOPLUS264 100ms 210N30P3 IXFL210N30P3	PDF
Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS264TM IXFL 44N80 Electrically Isolated Backside VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions Maximum Ratings	Original	ISOPLUS264TM 44N80 150unless 728B1 123B1 728B1 065B1	PDF
Contextual Info: Advance Technical Information Polar3TM HiPerFETTM Power MOSFET VDSS ID25 IXFL210N30P3 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 300V 108A Ω 16mΩ 250ns ISOPLUS264 Symbol Test Conditions	Original	IXFL210N30P3 250ns ISOPLUS264 -55ng 100ms 210N30P3	PDF
80S23 Contextual Info: IXFL 82N60P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS = 600 V ID25 = 82 A Ω RDS on ≤ 78 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	82N60P ISOPLUS264TM 80S23	PDF
60N80P Abstract: 60N80 IXFL60N80P Contextual Info: IXFL 60N80P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS ID25 = 800 V = 40 A Ω RDS on ≤ 150 mΩ ≤ 250 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings	Original	60N80P ISOPLUS264TM ISOPLUS264 60N80P 60N80 IXFL60N80P	PDF
34n100 Abstract: jm 60 ac Contextual Info: HiPerFETTM Power MOSFETs IXFL 34N100 VDSS = 1000 V 30 A ID25 = ISOPLUS 264TM ISOPLUS264 RDS on = 0.28 Ω (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions	Original	34N100 ISOPLUS264 ISOPLUS264TM ISOPLUS-264TM 728B1 jm 60 ac	PDF
80N50Q2 Abstract: IXFL80N50Q2 Contextual Info: IXFL80N50Q2 HiPerFETTM Power MOSFET Q2-Class Electrically Isolated Tab VDSS = ID25 = RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr ISOPLUS264TM( IXFL) Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	IXFL80N50Q2 ISOPLUS264TM( 80N50Q2 5-2-08-G IXFL80N50Q2	PDF
70n60 Abstract: IXFL70N60Q2 Contextual Info: IXFL70N60Q2 HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 600V 37A Ω 92mΩ 250ns ISOPLUS264 Symbol Test Conditions Maximum Ratings	Original	IXFL70N60Q2 250ns ISOPLUS264 26lts 70N60Q2 8-08-A 70n60 IXFL70N60Q2	PDF

ISOPLUS264 Search Results

ISOPLUS264 Price and Stock

IXYS Corporation CPC1709J

IXYS Corporation CPC1916Y

IXYS Corporation CPC1909J

IXYS Corporation CPC1779J

IXYS Corporation CPC1727J

ISOPLUS264 Datasheets Context Search

ISOPLUS-264

70n60

ixfn36n100

44N80

132N50P3

MOSFET 60n60

IXFN39N90

100N50P

IXFL34N100

IXGL50N60BD1

IXFL38N100Q2

IXFL210N30P3

80S23

60N80P

34n100

80N50Q2

70n60