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    82N60P Search Results

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    82N60P Price and Stock

    Littelfuse Inc IXFN82N60P

    MOSFET N-CH 600V 72A SOT-227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFN82N60P Tube 288 1
    • 1 $39.95
    • 10 $29.811
    • 100 $27.0236
    • 1000 $27.0236
    • 10000 $27.0236
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    RS IXFN82N60P Bulk 8 Weeks 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $39.71
    • 10000 $38.46
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    Littelfuse Inc IXFB82N60P

    MOSFET N-CH 600V 82A PLUS264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFB82N60P Tube 225 1
    • 1 $30.68
    • 10 $30.68
    • 100 $19.4302
    • 1000 $19.4302
    • 10000 $19.4302
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    Newark IXFB82N60P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $20.37
    • 10000 $20.37
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    RS IXFB82N60P Bulk 8 Weeks 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $28.55
    • 10000 $27.65
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    Littelfuse Inc IXFL82N60P

    MOSFET N-CH 600V 55A ISOPLUS264
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFL82N60P Tube 1
    • 1 $32.82
    • 10 $32.82
    • 100 $21.1424
    • 1000 $21.1424
    • 10000 $21.1424
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    Newark IXFL82N60P Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $22.16
    • 10000 $22.16
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    RS IXFL82N60P Bulk 8 Weeks 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $31.07
    • 10000 $30.08
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    IXYS Corporation IXFN82N60P

    MOSFET Modules DIODE Id82 BVdass600
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFN82N60P 75
    • 1 $39.95
    • 10 $29.81
    • 100 $27.02
    • 1000 $27.02
    • 10000 $27.02
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    Newark IXFN82N60P Bulk 1
    • 1 -
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    TTI IXFN82N60P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $36.03
    • 10000 $36.03
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    TME IXFN82N60P 1
    • 1 $40.73
    • 10 $32.32
    • 100 $32.32
    • 1000 $32.32
    • 10000 $32.32
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    IBS Electronics IXFN82N60P 300
    • 1 -
    • 10 -
    • 100 $38.753
    • 1000 $39.325
    • 10000 $39.325
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    New Advantage Corporation IXFN82N60P 200 1
    • 1 -
    • 10 -
    • 100 $84.21
    • 1000 $77.74
    • 10000 $77.74
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    Vyrian IXFN82N60P 113
    • 1 -
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    IXYS Corporation IXFB82N60P

    MOSFETs 82 Amps 600V 0.75 Ohm Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFB82N60P
    • 1 -
    • 10 -
    • 100 -
    • 1000 $20.94
    • 10000 $20.94
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    TME IXFB82N60P 1
    • 1 $25.75
    • 10 $23.08
    • 100 $21.54
    • 1000 $21.54
    • 10000 $21.54
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    82N60P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 82N60P VDSS = 600 V ID25 = 82 A RDS on ≤ 75 mΩ Ω ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		82N60P PLUS264TM PDF

    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 82N60P VDSS = 600 V ID25 = 82 A RDS on ≤ 75 mΩ Ω ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		82N60P PLUS264TM PDF

    80S23

    Contextual Info: IXFL 82N60P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS = 600 V ID25 = 82 A Ω RDS on ≤ 78 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		82N60P ISOPLUS264TM 80S23 PDF

    41a 049

    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFB 82N60P VDSS = 600 V ID25 = 82 A Ω RDS on ≤ 75 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		82N60P PLUS264TM 41a 049 PDF

    IXFN 82N60P

    Abstract: IXFN82N60P 82N60P
    Contextual Info: IXFN 82N60P PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous ±30


    Original     		82N60P IXFN 82N60P IXFN82N60P 82N60P PDF

    82N60P

    Abstract: uA78 41a 034
    Contextual Info: IXFL 82N60P PolarHVTM HiPerFET Power MOSFET ISOPLUS264TM VDSS = 600 V ID25 = 82 A Ω RDS on ≤ 78 mΩ ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		82N60P ISOPLUS264TM 82N60P uA78 41a 034 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF