HIGH-SPEED ACCESS TIME Search Results

A3738

Abstract: CA1023 8kx8 sram
Contextual Info: ^EDI _ EDI8808CB Electronic Designs Inc High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory • Access Times 20,25,35, and 45ns

HM65256B-12

Abstract: HM65256 HM68 HM65256BLP-10 HM65256B-20 65256B
Contextual Info: HM65256B Series 32768-word X 8-bit High Speed Pseudo Static RAM • FEATURES HM65256BP Series • • Single 5V ±10% High Speed Access Time CE Access T im e . 100/120/150/200ns Address Access T im e .50/60/75/100ns

Contextual Info: I: HIGH SPEED 128K 8K x 16 BIT IDT70825S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) jdt) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • The ID T70825 is a high-speed 8K x 16bit Sequential Access Random Access Memory (SARAM). The SARAM

HM65256

Contextual Info: HM65256B Series 32768-word X 8-bit High Speed Pseudo Static RAM • FEA T U R ES • Single 5V ±10% • High Speed Access Time CE Access T im e . 100/120/150/200ns Address Access T im e. 50/60/75/100ns

MSA1020

Abstract: sc 6700 Mitsubishi flash
Contextual Info: L-61103-0A MITSUBISHI ELECTRIC REV Features of Mitsubishi MCP Loaded DINOR Flash 1/2 16Mb -> 32Mb -> 64Mb 2. High Speed Access Time DINOR realizes high speed random access at low voltage. 3. High Speed Erase Fastest Erase Time of all Flash Memories (40ms/Block;Typical)

Contextual Info: jAT&T Data Sheet January 1992 ATT7C186 ' Microelectronics High-Speed CMOS SRAM 64 Kbit 8K x 8 , Flash Clear Features • High-speed read-access time — 12 ns maximum access time ■ High-speed flash clear ■ Automatic powerdown during long cycles ■ Advanced CMOS technology

HM65256BFP-12T

Abstract: HM65256BLP-10 HM65256BLSP-10 HM65256BLSP10
Contextual Info: HMGS2S6B Series 32768-word X 8-bit High Speed Pseudo Static R A M • FE A T U R ES • Single 5V ±10% • High Speed Access Time CE Access T im e . 100/120/150/200ns Address Access Tim e. 50/60/75/100ns

Contextual Info: IDT70824S/L HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features * * High-speed access - Military: 35/45ns (max.) - Commercial:20125135145ns (max.) Low-power operation - IDT70824S Active: 775mW(typ.) Standby: 5mW (typ.)

Contextual Info: W D EDI88128CS \ 128Kx8 Monolithic Static Ram ELECTRONIC DESIGNS, INC. Features 128Kx8 Monolithic High Speed CMOS Static RAM 128Kx8 bit CMOS Static Random Access Memory Fast Access Times: 15*, 17*, 20,25,35,45, and 55ns The EDI88128CS is a high speed, high performance,

EDI88128CS45CB

Abstract: EDI88128LPS35TB EDI88128CS25CI A71E EDI88128CS25CB EDI88128CS25LB EDI88128LPS55TB p 32 lcc 300 r EDI88128CS EDI88128CS15CI
Contextual Info: W5X EDI88128CS ELECTRONIC DESIGNS, INC 128Kx8 Monolithic Static Ram Features 128Kx8 Monolithic High Speed CMOS Static RAM 128Kx8 bit CMOS Static Random Access Memory Fast Access Times: 15*, 17* 20,25,35,45, and 55ns The EDI88128CS is a high speed, high performance,

Contextual Info: BAY 6 19S2 Data Sheet March 1992 L % AT&T Microelectronics ATT7C186 High-Speed CMOS SRAM 64 Kbits 8K x 8 , Flash Clear Features • High-speed read-access time — 12 ns maximum access time Plug-compatible with IDT7165 ■ High-speed flash clear Low-power operation

P4C174

Contextual Info: P4C174 P4C174 HIGH SPEED 8K x 8 CACHE TAG STATIC RAM FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time Data Retention at 2V for Battery Backup Operation Advanced CMOS Technology High-Speed Read-Access Time Low Power Operation — Active: 750 mW Typical at 25 ns

Contextual Info: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Integrated Device Technology, Inc. FEATURES: • High-speed access - Military: 35/45ns (max.) - Commercial: 20/25/35/45ns (max.) • Low-power operation - IDT70825S

Contextual Info: September 1990 Edition 1.0 - — - 1 . DATASHEET FUJITSU MB82B009-2S 1.152M-BIT HIGH-SPEED BiCMOS SRAM 128K Words x 9 Bits BiCMOS High-Speed Static Random Access Memory The Fujitsu MB82B009 is a high-speed static random access memory organized as

Contextual Info: FT6175 HIGH SPEED 8Kx8 CACHE TAG STATIC RAM FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time Data Retention at 2V for Battery Backup Operation High-Speed Read-Access Time Advanced CMOS Technology – 8/10/12/15/20/25 ns Commercial – 15/20/25 ns (Military)

Contextual Info: P4C174 HIGH SPEED 8K x 8 CACHE TAG STATIC RAM FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time • Data Retention at 2V for Battery Backup Operation ■ Advanced CMOS Technology High-Speed Read-Access Time ■ Low Power Operation — Active: 750 mW Typical at 25 ns

Contextual Info: P4C174 HIGH SPEED 8K x 8 CACHE TAG STATIC RAM FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time Data Retention at 2V for Battery Backup Operation High-Speed Read-Access Time Advanced CMOS Technology – 8/10/12/15/20/25 ns Commercial – 15/20/25 ns (Military)

Contextual Info: P4C174 HIGH SPEED 8K x 8 CACHE TAG STATIC RAM FEATURES • High Speed Address-To-Match - 8 ns Maximum Access Time ■ Data Retention at 2V for Battery Backup Operation ■ Advanced CMOS Technology ■ High-Speed Read-Access Time ■ Low Power Operation — Active: 750 mW Typical at 25 ns

Contextual Info: P4C174 HIGH SPEED 8K x 8 CACHE TAG STATIC RAM FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time Data Retention at 2V for Battery Backup Operation High-Speed Read-Access Time Advanced CMOS Technology – 8/10/12/15/20/25 ns Commercial – 15/20/25 ns (Military)

FT6175

Abstract: Memory
Contextual Info: FT6175 High Speed 8K x 8 Cache Tag Static Ram FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time Data Retention at 2V for Battery Backup Operation High-Speed Read-Access Time Advanced CMOS Technology – 8/10/12/15/20/25 ns Commercial – 15/20/25 ns (Military)

Contextual Info: P4C174 HIGH SPEED 8K x 8 CACHE TAG STATIC RAM FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time Data Retention at 2V for Battery Backup Operation High-Speed Read-Access Time Advanced CMOS Technology – 8/10/12/15/20/25 ns Commercial – 15/20/25 ns (Military)

Contextual Info: P4C174 HIGH SPEED 8K x 8 CACHE TAG STATIC RAM FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time Data Retention at 2V for Battery Backup Operation High-Speed Read-Access Time Advanced CMOS Technology – 8/10/12/15/20/25 ns Commercial – 15/20/25 ns (Military)

P4C174

Contextual Info: P4C174 HIGH SPEED 8K x 8 CACHE TAG STATIC RAM FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time Data Retention at 2V for Battery Backup Operation High-Speed Read-Access Time Advanced CMOS Technology – 8/10/12/15/20/25 ns Commercial – 15/20/25 ns (Military)

cache tag Static RAM

Contextual Info: FT6175 High Speed 8K x 8 Cache Tag Static Ram FEATURES High Speed Address-To-Match - 8 ns Maximum Access Time Data Retention at 2V for Battery Backup Operation High-Speed Read-Access Time Advanced CMOS Technology – 8/10/12/15/20/25 ns Commercial – 15/20/25 ns (Military)