HIGH VOLTAGE POWER SOURCE Search Results
HIGH VOLTAGE POWER SOURCE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
GC321AD7LP153KX18D | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
![]() |
||
GC331BD7LP473KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
![]() |
||
GC332DD7LP154KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
![]() |
||
GC343DD7LQ154KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
![]() |
||
GC355DD7LQ334KX18L | Murata Manufacturing Co Ltd | High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive |
![]() |
HIGH VOLTAGE POWER SOURCE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Automotive ecm
Abstract: interleave flyback controller buck current mode controller lm5035 active clamp controller LM5026 LM5008 LM5000 LM5020 lm5025a LM5107
|
Original |
LM5000 LM5104 LLP-10 LM5105 LM5106 MSOP-10, Automotive ecm interleave flyback controller buck current mode controller lm5035 active clamp controller LM5026 LM5008 LM5020 lm5025a LM5107 | |
IX2127
Abstract: DS-IX2127-R01 EIA-481-2 VB-12 FLUORESCENT ballast 12v
|
Original |
IX2127 IX2127 DS-IX2127-R01 DS-IX2127-R01 EIA-481-2 VB-12 FLUORESCENT ballast 12v | |
"high voltage" amplifier
Abstract: high voltage diodes 171J
|
Original |
100dB l00dB "high voltage" amplifier high voltage diodes 171J | |
Contextual Info: IX2127 High-Voltage Power MOSFET & IGBT Driver Driver Characteristics Parameter VOFFSET IO +/- Source/Sink Description Rating Units 600 V 250/500 mA VCSth 250 mV tON / tOFF (Typical) 100 ns The IX2127 is a high-voltage, high-speed power MOSFET and IGBT driver. High-voltage level-shift |
Original |
IX2127 IX2127 DS-IX2127-R02 | |
IX2127
Abstract: J-STD-033 VB-12
|
Original |
IX2127 IX2127 DS-IX2127-R02 J-STD-033 VB-12 | |
Contextual Info: IX2127 High-Voltage Power MOSFET & IGBT Driver Driver Characteristics Parameter VOFFSET IO +/- Source/Sink Description Rating Units 600 V 250/500 mA VCSth 250 mV tON / tOFF (Typical) 100 ns The IX2127 is a high-voltage, high-speed power MOSFET and IGBT driver. High-voltage level-shift |
Original |
IX2127 IX2127 DS-IX2127-R02 | |
MJE4353 equivalent
Abstract: equivalent transistor K 3634 to220 amps 1200 v BU108 SDT9207 "cross reference" BU100 D45H11 cross reference cross reference bd830 2SD1815 "cross reference" 2sd1815 cross reference
|
Original |
MJE4342 MJE4352 MJE4343 MJE4353 TIP73B TIP74 MJE4353 equivalent equivalent transistor K 3634 to220 amps 1200 v BU108 SDT9207 "cross reference" BU100 D45H11 cross reference cross reference bd830 2SD1815 "cross reference" 2sd1815 cross reference | |
2953AContextual Info: HIGH VOLTAGE POWER SYSTEMS 7 HCP SERIES Floating Output High Voltage Power System The HCP Series of high-voltage rack mount and bench-top power systems is a fully-featured chassis that enables users to reach higher levels of power, up to 15kW. The broad range of voltage |
Original |
-RS232 -RS422 -I10I -10PPM 5HCP115-FL2 2953A | |
2N5631 equivalent
Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
|
Original |
2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator | |
power IGBT MOSFET transistor GTO SCR di
Abstract: MOSFET IGBT THEORY AND APPLICATIONS gto thyristor driver ic Hockey Puck scr 1000a gto Gate Drive circuit gct thyristor 6 thyristor driver circuit GTO thyristor driver MITSUBISHI GATE TURN-OFF THYRISTOR scr powerex snubber capacitor
|
Original |
||
Contextual Info: SGNC320MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 55.0dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 16.5dB(typ.) @ f=0.9GHz Proven Reliability Only For peak stage of Doherty amplifier DESCRIPTION |
Original |
SGNC320MK 25deg 42dBm | |
MG650
Abstract: MG655 MG750-15 MP900 MV217 MV228 MV234 MV261 mv2342 mg750 caddock
|
Original |
50Range 750Tel: 44caddock medical20electronics. countryderating870 MG680 MG710 IL110 MG650 MG655 MG750-15 MP900 MV217 MV228 MV234 MV261 mv2342 mg750 caddock | |
Contextual Info: HIGH VOLTAGE POWER SYSTEMS 21 MCP SERIES Floating Output High Voltage Power System The MCP Series of high-voltage rack mount and bench-top power systems is a fully-featured chassis that enables users to reach higher levels of power, up to 15kW. The broad range |
Original |
-RS232 -RS422 -I10I -10PPM 125MCP115-FL2 | |
Contextual Info: SGN21C105MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.3dBm typ. @ Psat High Efficiency: 60%(typ.) @ Psat Power Gain :17dB(typ.) @ f=2.1GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater |
Original |
SGN21C105MK 25deg JESD22-A114) JEIA/ESD22-A115) | |
|
|||
IX2127Contextual Info: IX2127 High-Voltage Power MOSFET & IGBT Driver INTEGRATED CIRCUITS DIVISION Driver Characteristics Parameter VOFFSET IO +/- Source/Sink Description Rating Units 600 V 250/500 mA VCSth 250 mV tON / tOFF (Typical) 100 ns The IX2127 is a high-voltage, high-speed power |
Original |
IX2127 IX2127 DS-IX2127-R03 | |
BU108
Abstract: 2SA1046 BDX54 BU326 BU100
|
Original |
2N5745 2N4398) 2N5758 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 2SA1046 BDX54 BU326 BU100 | |
EKZE101Contextual Info: EGN21C210I2D GaN-HEMT 210W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 53.0dBm typ. @ Psat -High Efficiency: 68%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater |
Original |
14GHz EGN21C210I2D /-10MHz 48dBm /-10MHz EKZE101 | |
B4846
Abstract: S21 Package GRM188B11H102KA01D CS3376C
|
Original |
14GHz EGN21C105I2D /-10MHz 45dBm /-10MHz B4846 S21 Package GRM188B11H102KA01D CS3376C | |
adjustable pwm voltage regulatorContextual Info: Chapter 1, Section 5 High Voltage Linear/Switchmade Power Supply ICs §5. High Voltage Linear/Switchmade Power Supply ICs SMPS Start-Up/Linear Regulator ICs % LR8 - High Input Voltage Adjustable 3-Terminal Linear R egulator. |
OCR Scan |
AN-H40 HV9605C AN-H41 HV9605C) HV9606 HV9904 HV9906 SR036/SR037 adjustable pwm voltage regulator | |
Contextual Info: Panasonic Power F-MOS FETs 2SK2660 Tentative Silicon N-Channel Power F-MOS Unit : rmn • Features • High-speed switching • High drain-source voltage (V qss) ■Applications • High-speed switching Absolute Maximum Ratings (Tc = 25°C) Parameter Drain-Source breakdown voltage |
OCR Scan |
2SK2660 SC-63 | |
EGN28B400M1B-R
Abstract: JESD22-A114 Sumitomo 1076
|
Original |
EGN28B400M1B-R 44dBm) EGN28B400M1B-R JESD22-A114 Sumitomo 1076 | |
Contextual Info: Panasonic Power F-MOS FETs 2SK2660 Tentative Silicon N-Channel Power F-MOS Unit : mm • Features • High-speed switching • High drain-source voltage (V d s s ) ■ Applications • High-speed switching Absolute Maximum Ratings Parameter Drain-Source breakdown voltage |
OCR Scan |
2SK2660 SC-63 | |
MARK PSRI
Abstract: "Analog Multiplier" PSRI MAX4210 MAX4210AETT-T MAX4210AEUA MAX4211 COUT27
|
Original |
MAX4210/MAX4211 MAX4210 MAX4210A/B/C MAX4210D/E/F MAX4210/MAX4211 MARK PSRI "Analog Multiplier" PSRI MAX4210AETT-T MAX4210AEUA MAX4211 COUT27 | |
Contextual Info: 19-3285; Rev 1; 5/05 KITS ATION EVALU ABLE AVAIL High-Side Power and Current Monitors The MAX4210/MAX4211 low-cost, low-power, high-side power/current monitors provide an analog output voltage proportional to the power consumed by a load by multiplying load current and source voltage. The |
Original |
MAX4210/MAX4211 MAX4210 MAX4210A/B/C MAX4210D/E/F MAX4210/MAX4211 |