HIGH VOLTAGE 8 AND 16 AMP Search Results

High Voltage 8 and 16 Amp

Abstract: HVSSeries
Contextual Info: Product Brief High Voltage 8 and 16 Amp Schottky Rectifier Series CSHD8 Series 8 Amp 60V, 100V and 200V in the DPAK package CSHDD16 Series (16 Amp) 40V thru 200V Dual Common Cathode in the D2PAK package Typical Electrical Characteristics Central Semiconductor’s CSHD8 series (8 Amp)

KVA-500

Abstract: SB98107 4530 bussmann
Contextual Info: Bussmann Buss High Voltage Fuses HV Series 1000 - 10,000 Volts HVA 1000 Volts Amps 1/16 1/8 1/4 1/10 2/10 3/10 3/8 1/2 CATALOG SYMBOL: HVA, HVB, HVJ, HVL, HVR, HVT, HVU, HVW, AND HVX NON-TIME DELAY 1000 TO 10,000 VOLTS • Non-Time Delay fuses for high voltage instruments and circuits.

LQFP32

Abstract: LQFP44 ST72324BL
Contextual Info: ST72324BLxx-Auto 3.3V range 8-bit MCU for automotive with 16/32 Kbyte Flash or 16 Kbyte ROM, 10-bit ADC, 4 timers, SPI and SCI interfaces Features Memories • 16/32 Kbyte dual voltage high density Flash HDFlash or 16 Kbyte ROM with readout protection capability (in-application

sinus inverter 12V -230V

Abstract: SCT 280 Digital TV transmitter receivers block diagram electromagnetic pulse generator kit icp multiplexer 24 pin MCC 4D mcc 95 08101b scr speed control dc motor TRANSISTOR BC 187 LQFP32
Contextual Info: ST72324BLxx-Auto 3.3V range 8-bit MCU for automotive with 16/32 Kbyte Flash or 16 Kbyte ROM, 10-bit ADC, 4 timers, SPI and SCI interfaces Features Memories • 16/32 Kbyte dual voltage high density Flash HDFlash or 16 Kbyte ROM with readout protection capability (in-application

HS-5 310

Contextual Info: ST72324BLxx-Auto 3.3V range 8-bit MCU for automotive with 16/32 Kbyte Flash or 16 Kbyte ROM, 10-bit ADC, 4 timers, SPI and SCI interfaces Preliminary Data Features ● ● ● ● ● Memories – 16/32 Kbyte dual voltage high density Flash HDFlash or 16 Kbyte ROM with

Contextual Info: CY62157ESL MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical Standby current: 2 A ❐ Maximum Standby current: 8 A

Contextual Info: CY62157EV18 MoBL 8-Mbit 512 K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A

Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A

Contextual Info: CY62157EV18 MoBL 8-Mbit 512 K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A

CY62157DV18

Abstract: CY62157DV20 CY62157EV18
Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A

Contextual Info: CY62157ESL MoBL 8-Mbit 512 K x 16 Static RAM 8-Mbit (512 K × 16) Static RAM Features • Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical Standby current: 2 A ❐ Maximum Standby current: 8 A

Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM 8-bit (512K x 16) Static RAM Features • Very high speed: 55 ns ■ Wide voltage range: 1.65 V–2.25 V ■ Pin compatible with CY62157DV18 and CY62157DV20 ■ Ultra low standby power ❐ Typical Standby current: 2 A

Contextual Info: Positronic Industries connectpositronic.com continued from previous page . . . 8-16 AWG [10.0-1.0mm2] removable solder and crimp power, 0.125 inch [3.18 mm] diameter straight and right angle 90° solder printed board mount, power, ­shielded, high voltage

ltadb

Abstract: LTACY Marking LTC2602 BD01 LTC1661 LTC2612 LTC2622 A1 marking code amplifier
Contextual Info: LTC2602/LTC2612/LTC2622 Dual 16-/14-/12-Bit Rail-to-Rail DACs in 8-Lead MSOP U FEATURES DESCRIPTIO • The LTC 2602/LTC2612/LTC2622 are dual 16-,14- and 12-bit, 2.5V-to-5.5V rail-to-rail voltage-output DACs, in a tiny 8-lead MSOP package. They have built-in high performance output buffers and are guaranteed monotonic.

rcf art

Abstract: CTS256 JEDEC to 243 ST LQFP32 LQFP44 LQFP64 ST72321 ST72324 jrc 2218 ST72P3
Contextual Info: ST72325xxx-Auto 8-bit MCU for automotive with 16 to 60 Kbyte Flash, ADC, CSS, 5 timers, SPI, SCI, I2C interface Features • ■ Memories – 16 to 60 Kbyte dual voltage High Density Flash HDFlash with readout protection capability. In-application programming and

block diagram for RF transmitter AND RECEIVER doc

Contextual Info: ST72325xxx-Auto 8-bit MCU for automotive with 16 to 60 Kbyte Flash, ADC, CSS, 5 timers, SPI, SCI, I2C interface Features • ■ Memories – 16 to 60 Kbyte dual voltage High Density Flash HDFlash with readout protection capability. In-application programming and

TRANSISTOR SMD MARKING CODE 2.T

Abstract: ca6 smd code SMD diode Ca6 SMD JRC DIODE smd marking A4 Diodes smd marking f5 reverse voltage marking code E5 SMD ic SCR TRIGGER PULSE 3 phase sinus inverter 12V -230V ca2 smd code
Contextual Info: ST72325xxx-Auto 8-bit MCU for automotive with 16 to 60 Kbyte Flash, ADC, CSS, 5 timers, SPI, SCI, I2C interface Features Memories • 16 to 60 Kbyte dual voltage High Density Flash HDFlash with readout protection capability. In-application programming and in-circuit

MCU24-1

Abstract: AN1709 LQFP32 LQFP44 LQFP48 LQFP64 SDIP42 ST72321 ST72324 ST72325
Contextual Info: ST72325xxx-Auto 8-bit MCU for automotive with 16 to 60 Kbyte Flash, ADC, CSS, 5 timers, SPI, SCI, I2C interface Features Memories • 16 to 60 Kbyte dual voltage High Density Flash HDFlash with readout protection capability. In-application programming and in-circuit

synergy microwave vco

Abstract: adf4150hv ADu7020 VCO 1ghz from synergy part no DCYS100-200-12 RF 1022 E Top Octave Synthesizer 1.5GHZ VCO cmos 4093 ADF4156 DB31
Contextual Info: High Voltage Fractional-N / Integer-N PLL Synthesizer ADF4150HV Preliminary Technical Data FEATURES GENERAL DESCRIPTION Fractional-N synthesizer and integer-N synthesizer High voltage charge pump: 6 V to 30 V RF bandwidth to 4.4 GHz Programmable divide-by-1/2/4/8 or 16 outputs

BGA-48-0608

Abstract: BS616UV2021 BS616UV2021AC BS616UV2021AI BS616UV2021DC BS616UV2021DI
Contextual Info: BSI Ultra Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616UV2021 „ DESCRIPTION „ FEATURES The BS616UV2021 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide

TBA 1404

Abstract: BGA-48-0608 BS616LV2021 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI
Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2021 „ DESCRIPTION „ FEATURES The BS616LV2021 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide

CY62157DV18

Abstract: CY62157DV20 CY62157EV18
Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Wide voltage range: 1.65V–2.25V

Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are • Very high speed: 55 ns placed in a high impedance state when: • Wide voltage range: 1.65V–2.25V

CY62157DV18

Abstract: CY62157DV20 CY62157EV18
Contextual Info: CY62157EV18 MoBL 8-Mbit 512K x 16 Static RAM Features deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance state when: • Very high speed: 55 ns • Wide voltage range: 1.65V–2.25V