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    BS616LV2021AC Search Results

    BS616LV2021AC Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS616LV2021AC Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable Original PDF
    BS616LV2021AC-10 Brilliance Semiconductor SRAM Chip, Asynchronous, 2Mbit, SDR, 3.3V|5V Supply, Commercial, BGA, 48-Pin Original PDF
    BS616LV2021AC-100 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 128K x 16 or 256k x 8 bit switchable Original PDF
    BS616LV2021AC-100 Brilliance Semiconductor SRAM Chip, Asynchronous, 2Mbit, 3.3V|5V Supply, Commercial, BGA, 48-Pin Original PDF
    BS616LV2021AC-70 Brilliance Semiconductor SRAM Chip, Asynchronous, 2Mbit, SDR, 3.3V|5V Supply, Commercial, BGA, 48-Pin Original PDF
    BS616LV2021AC-70 Brilliance Semiconductor Very Low Power/Voltage CMOS SRAM 128K x 16 or 256k x 8 bit switchable Original PDF

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    TBA 1404

    Abstract: BGA-48-0608 BS616LV2021 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2021 „ DESCRIPTION „ FEATURES The BS616LV2021 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits or 262,144 bytes by 8 bits selectable by CIO pin and operates from a wide


    Original     		PDF BS616LV2021 BS616LV2021 70/100ns R0201-BS616LV2021 TBA 1404 BGA-48-0608 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI

    BGA-48-0608

    Abstract: BS616LV2021 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI
    Text: BSI Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable BS616LV2021 „ FEATURES „ DESCRIPTION • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade: 25mA (Max.) operating current


    Original     		PDF BS616LV2021 BS616LV2021 R0201-BS616LV2021 100ns -40oC BGA-48-0608 BS616LV2021AC BS616LV2021AI BS616LV2021DC BS616LV2021DI