bfr96 equivalent
Abstract: MCE544 bfr96 equivalent TRANSISTORS MC1343 transistor equivalent bfr96 2N5031 equivalent TRANSISTOR PNP 5GHz MRF630 MRF544 microsemi MRF237
Text: MCE545 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MCE545 is a high breakdown, high gain, discrete PNP silicon bipolar transistor, shipped in waffle pack. ! High Breakdown BVCEO = 70V ! Gold Back Metal
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MCE545
Symb333
SD1127/MRF237
MS1649/MRF630
MRF837/MRF8372
MRF559
400mA
200mA
bfr96 equivalent
MCE544
bfr96 equivalent TRANSISTORS
MC1343
transistor equivalent bfr96
2N5031 equivalent
TRANSISTOR PNP 5GHz
MRF630
MRF544
microsemi MRF237
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BF569
Abstract: BF569R
Text: BF569/BF569R Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3
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BF569/BF569R
BF569
BF569R
D-74025
20-Jan-99
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EN4625
Abstract: transistor 2sA1815 2SA1815 2SC4432
Text: Ordering number:EN4625 PNP Epitaxial Planar Silicon Transistor 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB f=100MHz . · High cutoff frequency ; fT=750MHz typ.
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EN4625
2SA1815
100MHz)
750MHz
2SC4432.
2SA1815]
EN4625
transistor 2sA1815
2SA1815
2SC4432
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2SA1815
Abstract: 2SC4432 ITR04747 ITR04748
Text: Ordering number:ENN4625 PNP Epitaxial Planar Silicon Transistors 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency General-Purose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB f=100MHz . · High cutoff frequency ; fT=750MHz typ.
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ENN4625
2SA1815
100MHz)
750MHz
2SC4432.
2018B
2SA1815]
2SA1815
2SC4432
ITR04747
ITR04748
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EN4644
Abstract: 2SA1857 2SC4400 marking 7T transistor
Text: Ordering number:EN4644 PNP Epitaxial Planar Silicon Transistor 2SA1857 FM, RF, MIX, IF Amplifier High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB typ f=100MHz . · High cutoff frequency : fT=750MHz typ.
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EN4644
2SA1857
100MHz)
750MHz
2SC4400.
2SA1857]
EN4644
2SA1857
2SC4400
marking 7T transistor
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EN4644
Abstract: 2SA1857 2SC4400 MarKING JS 46441 AX SANYO
Text: Ordering number:EN4644 PNP Epitaxial Planar Silicon Transistor 2SA1857 FM, RF, MIX, IF Amplifier High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB typ f=100MHz . · High cutoff frequency : fT=750MHz typ.
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EN4644
2SA1857
100MHz)
750MHz
2SC4400.
2SA1857]
EN4644
2SA1857
2SC4400
MarKING JS
46441
AX SANYO
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BF979
Abstract: No abstract text available
Text: BF979 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features D High cross modulation performance D High power gain
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BF979
BF979
D-74025
20-Jan-99
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BF979
Abstract: No abstract text available
Text: BF979 Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features D High cross modulation performance D High power gain
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BF979
BF979
D-74025
20-Jan-99
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Untitled
Abstract: No abstract text available
Text: BF979 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features D High cross modulation performance D High power gain
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BF979
BF979
30ake
D-74025
20-Jan-99
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Untitled
Abstract: No abstract text available
Text: BF569 / BF569R VISHAY Vishay Semiconductors Silicon PNP Planar RF Transistor 1 Features • High gain • Low noise BF569 2 Applications 3 1 For selfoscillating RF mixer stages. BF569R Mechanical Data 3 Typ: BF569 Case: SOT-23 Plastic case Weight: approx. 8.0 mg
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BF569
BF569R
BF569
OT-23
BF569R
D-74025
19-Aug-04
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MRF545
Abstract: No abstract text available
Text: MRF545 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon PNP, high Frequency, high breakdown, To-39 packaged, Transistor • Maximum Unilateral Gain = 14 dB typ @ f = 200 MHz • High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
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MRF545
To-39
25Vdc,
MRF545
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telefun
Abstract: transistor Bf 979 BF979
Text: BF 979 TELEFUNKEN Semiconductors Silicon PNP RF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low modulation Features D High cross modulation performance D High power gain D Low noise D High reverse attenuation 3 2 1 BF979 Marking
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BF979
D-74025
telefun
transistor Bf 979
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Untitled
Abstract: No abstract text available
Text: BF979 VISHAY Vishay Semiconductors Silicon PNP Planar RF Transistor Features • • • • High cross modulation performance High power gain Low noise High reverse attenuation 3 2 1 Applications UHF/VHF uncontrolled prestages with low noise and low modulation.
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BF979
BF970
D-74025
20-Aug-04
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BF569
Abstract: BF569R
Text: BF569/BF569R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3 BF569 Marking: LH
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BF569/BF569R
BF569
BF569R
D-74025
20-Jan-99
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BF569
Abstract: BF569R
Text: BF569/BF569R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3 BF569 Marking: LH
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BF569/BF569R
BF569
BF569R
D-74025
20-Jan-99
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TO50 transistor
Abstract: No abstract text available
Text: Not for new design, this product will be obsoleted soon BF979 Vishay Semiconductors Silicon PNP Planar RF Transistor Features • • • • • • 3 High cross modulation performance High power gain e3 Low noise High reverse attenuation Lead Pb -free component
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BF979
2002/95/EC
2002/96/EC
BF970
18-Jul-08
TO50 transistor
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MRF545
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF545 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon PNP, high Frequency, high breakdown Transistor • Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz
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MRF545
MRF545
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Untitled
Abstract: No abstract text available
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF545 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon PNP, high Frequency, high breakdown Transistor • Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz
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MRF545
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transistor BF 509
Abstract: transistor BF 298 bf509 TRANSISTOR bf 297 EE50 to 92 z Kleine
Text: BF 509 Silizium-PNP-HF-Transistor Silicon PNP RF Transistor Anwendungen: Regelbare VHF-Eingangsstufen Applications: Gain controlled VHF input stages Besondere Merkmale: • Hohe Leistungsverstärkung Features: • High p o w e r gain • Kleine Rauschzahlen
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Untitled
Abstract: No abstract text available
Text: VfSMAY _ BF569/BF569R ▼ Vishay Telefunken Silicon PNP Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications For selfoscillating RF m ixer stages. Features • High gain •
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BF569/BF569R
BF569
BF569R
D-74025
20-Jan-99
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transistor BF 509
Abstract: l43 transistor c328 transistor BF509 transistor sr 61 transistor 3s4 transistor marking l43 Transistor Marking C3 sot-23 TRANSISTOR MARKING 76 bc238c
Text: TELEFUNKEN filC D ELECTRONIC • fiTEDD^b D0DS21b 4 « A L G 6 BF 509 YIIUKPtlDMKdKM electronic Creative Technologies Silicon PNP RF Transistor Applications: Gain controlled VHF input stages Features: • High power gain • Low noise figure • High reverse attenuation
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000521b
ft-11
569-GS
000s154
hal66
if-11
transistor BF 509
l43 transistor
c328 transistor
BF509
transistor sr 61
transistor 3s4
transistor marking l43
Transistor Marking C3
sot-23 TRANSISTOR MARKING 76
bc238c
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BF509S
Abstract: transistor BF 509 BF509 marking code 3h transistor creative 6.1 6 T 3H sot-23 TRANSISTOR MARKING 76 marking U12
Text: TELEFUNKEN ELECTRONIC filC D WÊ fi^EOO^b 000521^ T • ALG6 7~' 3 t - n BF 509 S ITimiPtMl&GItM electronic Creative Technologies Silicon PNP RF Transistor Applications! Gain controlled VHF Input stages Features: • High power gain • Low noise figure High reverse attenuation
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7-31-tl
ft-11
569-GS
000s154
hal66
if-11
BF509S
transistor BF 509
BF509
marking code 3h transistor
creative 6.1
6 T 3H
sot-23 TRANSISTOR MARKING 76
marking U12
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581 transistor motorola
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR4957LT1 PNP Silicon High-Frequency Transistor . . . designed for high-gain, low-noise amplifier oscillator and mixer applications. Specifically packaged for thick and thin-film circuits using surface mount
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MMBR4957LT1
MMBR4957LT1
581 transistor motorola
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2sc377
Abstract: No abstract text available
Text: S 4 P IV O VERY HIGH-FREQUENCY TRANSISTOR SERIES fcl Use * * * * Wide-band amplifiers UHF, VHF TV tuners CATV converters RF modulators Features * High power gain * Small noise figure * High cutoff frequency ( ):Marking on MCP. CP, PCP. For PNP, (-)sign is omitted.
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250mm
2SC3771
2SC3772
2SC3773
2SC377
2SC3775
2SC4269
2SC4270
2SC4364
2SC4365
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