HIGH GAIN PNP RF TRANSISTOR Search Results

transistor BF 509

Abstract: transistor BF 298 bf509 TRANSISTOR bf 297 EE50 to 92 z Kleine
Contextual Info: BF 509 Silizium-PNP-HF-Transistor Silicon PNP RF Transistor Anwendungen: Regelbare VHF-Eingangsstufen Applications: Gain controlled VHF input stages Besondere Merkmale: • Hohe Leistungsverstärkung Features: • High p o w e r gain • Kleine Rauschzahlen

bfr96 equivalent

Abstract: MCE544 bfr96 equivalent TRANSISTORS MC1343 transistor equivalent bfr96 2N5031 equivalent TRANSISTOR PNP 5GHz MRF630 MRF544 microsemi MRF237
Contextual Info: MCE545 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MCE545 is a high breakdown, high gain, discrete PNP silicon bipolar transistor, shipped in waffle pack. ! High Breakdown BVCEO = 70V ! Gold Back Metal

Contextual Info: VfSMAY _ BF569/BF569R ▼ Vishay Telefunken Silicon PNP Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications For selfoscillating RF m ixer stages. Features • High gain •

transistor BF 509

Abstract: l43 transistor c328 transistor BF509 transistor sr 61 transistor 3s4 transistor marking l43 Transistor Marking C3 sot-23 TRANSISTOR MARKING 76 bc238c
Contextual Info: TELEFUNKEN filC D ELECTRONIC • fiTEDD^b D0DS21b 4 « A L G 6 BF 509 YIIUKPtlDMKdKM electronic Creative Technologies Silicon PNP RF Transistor Applications: Gain controlled VHF input stages Features: • High power gain • Low noise figure • High reverse attenuation

BF569

Abstract: BF569R
Contextual Info: BF569/BF569R Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3

BF509S

Abstract: transistor BF 509 BF509 marking code 3h transistor creative 6.1 6 T 3H sot-23 TRANSISTOR MARKING 76 marking U12
Contextual Info: TELEFUNKEN ELECTRONIC filC D WÊ fi^EOO^b 000521^ T • ALG6 7~' 3 t - n BF 509 S ITimiPtMl&GItM electronic Creative Technologies Silicon PNP RF Transistor Applications! Gain controlled VHF Input stages Features: • High power gain • Low noise figure High reverse attenuation

EN4625

Abstract: transistor 2sA1815 2SA1815 2SC4432
Contextual Info: Ordering number:EN4625 PNP Epitaxial Planar Silicon Transistor 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB f=100MHz . · High cutoff frequency ; fT=750MHz typ.

581 transistor motorola

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR4957LT1 PNP Silicon High-Frequency Transistor . . . designed for high-gain, low-noise amplifier oscillator and mixer applications. Specifically packaged for thick and thin-film circuits using surface mount

2SA1815

Abstract: 2SC4432 ITR04747 ITR04748
Contextual Info: Ordering number:ENN4625 PNP Epitaxial Planar Silicon Transistors 2SA1815 FM, RF, MIX, IF Amplifier, High-Frequency General-Purose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB f=100MHz . · High cutoff frequency ; fT=750MHz typ.

EN4644

Abstract: 2SA1857 2SC4400 marking 7T transistor
Contextual Info: Ordering number:EN4644 PNP Epitaxial Planar Silicon Transistor 2SA1857 FM, RF, MIX, IF Amplifier High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB typ f=100MHz . · High cutoff frequency : fT=750MHz typ.

EN4644

Abstract: 2SA1857 2SC4400 MarKING JS 46441 AX SANYO
Contextual Info: Ordering number:EN4644 PNP Epitaxial Planar Silicon Transistor 2SA1857 FM, RF, MIX, IF Amplifier High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB typ f=100MHz . · High cutoff frequency : fT=750MHz typ.

BF979

Contextual Info: BF979 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features D High cross modulation performance D High power gain

BF979

Contextual Info: BF979 Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features D High cross modulation performance D High power gain

Contextual Info: BF979 Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features D High cross modulation performance D High power gain

MRF545

Contextual Info: MRF545 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon PNP, high Frequency, high breakdown, To-39 packaged, Transistor • Maximum Unilateral Gain = 14 dB typ @ f = 200 MHz • High Collector Base Breakdown Voltage - BVCBO = 100 V (min)

telefun

Abstract: transistor Bf 979 BF979
Contextual Info: BF 979 TELEFUNKEN Semiconductors Silicon PNP RF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low modulation Features D High cross modulation performance D High power gain D Low noise D High reverse attenuation 3 2 1 BF979 Marking

Contextual Info: BF979 VISHAY Vishay Semiconductors Silicon PNP Planar RF Transistor Features • • • • High cross modulation performance High power gain Low noise High reverse attenuation 3 2 1 Applications UHF/VHF uncontrolled prestages with low noise and low modulation.

BF569

Abstract: BF569R
Contextual Info: BF569/BF569R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3 BF569 Marking: LH

BF979

Contextual Info: BF979 Silicon PNP RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation Features D High cross modulation performance D High power gain D Low noise D High reverse attenuation

BF569

Abstract: BF569R
Contextual Info: BF569/BF569R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For selfoscillating RF mixer stages. Features D High gain D Low noise 1 1 13 581 13 581 94 9280 2 9510527 3 3 BF569 Marking: LH

2sc377

Contextual Info: S 4 P IV O VERY HIGH-FREQUENCY TRANSISTOR SERIES fcl Use * * * * Wide-band amplifiers UHF, VHF TV tuners CATV converters RF modulators Features * High power gain * Small noise figure * High cutoff frequency ( ):Marking on MCP. CP, PCP. For PNP, (-)sign is omitted.

TO50 transistor

Contextual Info: Not for new design, this product will be obsoleted soon BF979 Vishay Semiconductors Silicon PNP Planar RF Transistor Features • • • • • • 3 High cross modulation performance High power gain e3 Low noise High reverse attenuation Lead Pb -free component

MRF545

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF545 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon PNP, high Frequency, high breakdown Transistor • Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF545 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon PNP, high Frequency, high breakdown Transistor • Maximum Unilateral Gain = 14 dB (typ) @ f = 200 MHz