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    HIGH CURRENT IGBT Search Results

    HIGH CURRENT IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    HIGH CURRENT IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IX2204 Dual Low Side IGBT Gate Driver INTEGRATED CIRCUITS DIVISION Features Description • • • • • • • • The IX2204 is a dual high current gate driver specifically designed to drive the gates of high current IGBTs. The IX2204 provides two high current outputs


    Original     		PDF IX2204 IX2204 DS-IX2204-R02

    PMB2123330

    Abstract: PMB2124100 PMB2124200 PMB2124150 smps ap 2400 PMB2303330 RMB1854560 PMB2203100 PMB1704100 PMB2203560
    Text: PMB / RMB Metallized polypropylene film capacitor MKP - Snubber/pulse - High current - RMB: small size Main applications Snubber, energy conversion and control in power semiconductor circuits, IGBT modules protection and SMPS protection circuits, high voltage, high current and high pulse applications


    Original     		PDF PMB2303470* RMB2303680* RMB2303820* 100kHz, 100kHz PMB2123330 PMB2124100 PMB2124200 PMB2124150 smps ap 2400 PMB2303330 RMB1854560 PMB2203100 PMB1704100 PMB2203560

    205PMB122

    Abstract: capacitor snubber Polypropylene 1 uf IGBT 3kv
    Text: Polypropylene Film Capacitors for Power Semiconductors Circuits PMB • Snubber Capacitor for Energy Conversion • High Voltage • High Current • High Pulse Current Applications Power Semiconductor Circuits • SMPS Protection Circuits • IGBT Module Protection


    Original     		PDF 100VDC 5x50x35 824PMB122K 475PMB700K# 824PMB202K# 5x45x30 505PMB700K# 824PMB252K# 205PMB122 capacitor snubber Polypropylene 1 uf IGBT 3kv

    IGBT 3kv

    Abstract: No abstract text available
    Text: Polypropylene Film Capacitors for Power Semiconductors Circuits PMB • Snubber Capacitor for Energy Conversion • High Voltage • High Current • High Pulse Current Applications Power Semiconductor Circuits • SMPS Protection Circuits • IGBT Module Protection


    Original     		PDF 100VDC IGBT 3kv

    SCHEMATIC igbt dimmer

    Abstract: SCHEMATIC dimmer igbt gd5nb igbt dimmer GD5NB120SZ JESD97 STGD5NB120SZ STGD5NB120SZ-1 STGD5NB120SZT4 igbt dimmer applications circuit diagram
    Text: STGD5NB120SZ 5 A - 1200 V - low drop internally clamped IGBT Features • Low on-voltage drop VCE(sat ■ High current capability ■ Off losses include tail current ■ High voltage clamping 3 3 2 1 Applications DPAK ■ Light dimmer ■ Inrush current limitation


    Original     		PDF STGD5NB120SZ STGD5NB120SZ-1 GD5NB120SZ STGD5NB120SZT4 SCHEMATIC igbt dimmer SCHEMATIC dimmer igbt gd5nb igbt dimmer GD5NB120SZ JESD97 STGD5NB120SZ STGD5NB120SZ-1 STGD5NB120SZT4 igbt dimmer applications circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: YD8316 YOUDA INTEGRATED CIRCUIT IGBT GATE DRIVER—YD8316 DESCRIPTION The YD8316 is a dedicated IC integrating IGBT gate drive circuits on a single chip. A high current directly drives IGBT FEATURES *Can directly control from a micro-controller, *Can directly drive the IGBT gate using a high current. Source current: -200mA max , sink current 1A(max),


    Original     		PDF YD8316 YD8316 -200mA

    STGP7NB60H

    Abstract: No abstract text available
    Text: STGP7NB60H N-CHANNEL 7A - 600V - TO-220 PowerMESH IGBT TYPE STGP7NB60H VCES VCE sat IC 600 V < 2.8 V 7A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION


    Original     		PDF STGP7NB60H O-220 50kHz STGP7NB60H

    STGW12NB60H

    Abstract: No abstract text available
    Text: STGW12NB60H N-CHANNEL 12A - 600V − TO-247 PowerMESH IGBT TYPE STGW12NB60H VCES VCE sat IC 600 V < 2.8 V 12 A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION


    Original     		PDF STGW12NB60H O-247 50kHz STGW12NB60H

    smps control ic 393

    Abstract: STGP12NB60H
    Text: STGP12NB60H N-CHANNEL 12A - 600V − TO-220 PowerMESH IGBT TYPE STGP12NB60H VCES VCE sat IC 600 V < 2.8 V 12 A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION


    Original     		PDF STGP12NB60H O-220 50kHz smps control ic 393 STGP12NB60H

    STGE50NB60HD

    Abstract: STGY50NB60HD
    Text: STGE50NB60HD N-CHANNEL 50A - 600V - ISOTOP PowerMESH IGBT TYPE STGY50NB60HD VCES VCE sat IC 600 V < 2.8 V 50 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION


    Original     		PDF STGE50NB60HD STGY50NB60HD 120kHz STGE50NB60HD STGY50NB60HD

    IC 2030 schematic diagram

    Abstract: STGY50NB60HD 2030 ic circuit diagram
    Text: STGY50NB60HD N-CHANNEL 50A - 600V - Max247 PowerMESH IGBT TYPE STGY50NB60HD VCES VCE sat IC 600 V < 2.8 V 50 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION


    Original     		PDF STGY50NB60HD Max247 50kHz IC 2030 schematic diagram STGY50NB60HD 2030 ic circuit diagram

    STGB7NB60HD

    Abstract: STTA506 05 LE 10 c-E
    Text: STGB7NB60HD N-CHANNEL 7A - 600V DPAK PowerMESH IGBT TYPE V CES V CE sat IC STGB7NB60HD 600 V < 2.8 V 7A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT


    Original     		PDF STGB7NB60HD O-263) O-263 STGB7NB60HD STTA506 05 LE 10 c-E

    Untitled

    Abstract: No abstract text available
    Text: TC4451/TC4452 12A High-Speed MOSFET Drivers Features: General Description: • High Peak Output Current: 13A typical • Low Shoot-Through/Cross-Conduction Current in Output Stage • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Continuous Output Current: 2.6A


    Original     		PDF TC4451/TC4452 in-60-4-227-8870

    TC4421AVOA

    Abstract: tc4420 TC4422AVPA TC4422A vat package marking code MOSFET MARK H1 MS-001 TC4421A TC4421AVO tc4422avoa
    Text: TC4421A/TC4422A 9A High-Speed MOSFET Drivers Features General Description • High Peak Output Current: 10A typ. • Low Shoot-Through/Cross-Conduction Current in Output Stage • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Continuous Output Current: 2A (max.)


    Original     		PDF TC4421A/TC4422A TC4420/TC4429 TC4421/TC4422 DS21946A-page TC4421AVOA tc4420 TC4422AVPA TC4422A vat package marking code MOSFET MARK H1 MS-001 TC4421A TC4421AVO tc4422avoa

    TC4421

    Abstract: TC4421CAT TC4421CPA TC4421EPA TC4421MJA TC4422 TC4422CAT TC4422CPA TC4422EPA
    Text: 9A HIGH-SPEED MOSFET DRIVERS TC4421 TC4421 TC4422 TC4422 9A HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ Tough CMOS Construction High Peak Output Current . . . . . . . . . . . . . . . . . . 9A High Continuous Output Current . . . . . . . . 2A Max


    Original     		PDF TC4421 TC4422 30nsec O-220 TC4421 TC4421CAT TC4421CPA TC4421EPA TC4421MJA TC4422 TC4422CAT TC4422CPA TC4422EPA

    Untitled

    Abstract: No abstract text available
    Text: TC4451/TC4452 12A High-Speed MOSFET Drivers Features General Description • High Peak Output Current: 13A typical • Low Shoot-Through/Cross-Conduction Current in Output Stage • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Continuous Output Current: 2.6A (max.)


    Original     		PDF TC4451/TC4452 DS21987B-page

    Untitled

    Abstract: No abstract text available
    Text: TC4421A/TC4422A 9A High-Speed MOSFET Drivers Features General Description • High Peak Output Current: 10A typ. • Low Shoot-Through/Cross-Conduction Current in Output Stage • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Continuous Output Current: 2A (max.)


    Original     		PDF TC4421A/TC4422A

    tc4422avoa

    Abstract: No abstract text available
    Text: TC4421A/TC4422A 9A High-Speed MOSFET Drivers Features General Description • High Peak Output Current: 10A typ. • Low Shoot-Through/Cross-Conduction Current in Output Stage • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Continuous Output Current: 2A (max.)


    Original     		PDF TC4421A/TC4422A TC4420/TC4429 TC4421/TC4422 Thermally-Enh778-366 DS21946B-page tc4422avoa

    STGP10N50A

    Abstract: STGP10N50
    Text: SGS-THOMSON STGP10N50A 1D=0 _ ISOLATED GATE BIPOLAR TRANSISTOR IGBT PRELIMINARY DATA . HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) . VERY LOW ON-VOLTAGE DROP V Ce (s a t ) . HIGH RELIABILITY LEVEL . HIGH CURRENT CAPABILITY . OFF LOSSES INCLUDE TAIL CURRENT


    OCR Scan     		PDF STGP10N50A SC06560 00V/mS 00V//XS 50V/U 00V//is gc25i80 STGP10N50A STGP10N50

    ge 724

    Abstract: GE power DIODE
    Text: 1MBI750LP-060 750A IGBT MODULE ( L series) Fuji Power Module Outline Drawings • Features • High Speed Switching • Low Saturation Voltage • Voltage Drive ■ A p p licatio n s • High Current Motor Drive, such as Electric Vehicle • High Current Inverter


    OCR Scan     		PDF 1MBI750LP-060 GGG22M7 1MBI750LP-060 D00224fl ge 724 GE power DIODE

    1MBI750LN-060

    Abstract: M122 RG242 750a
    Text: 1MBI750LN-060 750A Fuji Power Module IGBT MODULE ( L series) • Features • High Speed Switching • Low Saturation Voltage • Voltage Drive ■ A p plications • High Current for Motor Drive, such as Electric Vehicle • High Current Inverter • Uninterruptible Power Supply


    OCR Scan     		PDF 1MBI750LN-060 1MBI750LN-060 523fl7cl2 DQ052I4L, M122 RG242 750a

    750a

    Abstract: No abstract text available
    Text: 1MBI750LN-060 750A Fuji Power Module IGBT MODULE ( L series) • Features • High Speed Switching • Low Saturation Voltage • Voltage Drive ■ A p plications • High Current for Motor Drive, such as Electric Vehicle • High Current Inverter • Uninterruptible Power Supply


    OCR Scan     		PDF 1MBI750LN-060 223fi7c 750a

    1MBI750LN-060

    Abstract: M122
    Text: 1MBI750LN-060 750A Fuji Power Module IGBT MODULE ( L series) • Features • High Speed Switching • Low Saturation Voltage • Voltage Drive ■ A p plications • High Current for Motor Drive, such as Electric Vehicle • High Current Inverter • Uninterruptible Power Supply


    OCR Scan     		PDF 1MBI750LN-060 1MBI750LN-060 523fl7cl2 DQ052I4L, M122

    RCD snubber

    Abstract: calculation of IGBT snubber IGBT snubber for inductive load snubber CIRCUITS mosfet IGBT snubber AN-984 snubber circuit for mosfet 200a liu Pelly snubber circuit
    Text: Switching Voltage Transient Protection Schemes For High Current IGBT Modules Rahul Chokhawaia, Saed Sobhani International Rectifier Corporation Applications Engineering 233 Kansas St., El Segundo, CA 90245 A bstract: The emergence o f high current an d fa ster


    OCR Scan     		PDF AN-983. AN-984, RCD snubber calculation of IGBT snubber IGBT snubber for inductive load snubber CIRCUITS mosfet IGBT snubber AN-984 snubber circuit for mosfet 200a liu Pelly snubber circuit