Untitled
Abstract: No abstract text available
Text: IX2204 Dual Low Side IGBT Gate Driver INTEGRATED CIRCUITS DIVISION Features Description • • • • • • • • The IX2204 is a dual high current gate driver specifically designed to drive the gates of high current IGBTs. The IX2204 provides two high current outputs
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Original
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IX2204
IX2204
DS-IX2204-R02
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PDF
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IXEP1400
Abstract: CPC1706 CPC1020N
Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.
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Original
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CH-2555
N1016,
IXEP1400
CPC1706
CPC1020N
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PDF
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Untitled
Abstract: No abstract text available
Text: GA03JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID @ Tc=150°C hFE Tc=25°C Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area
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Original
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GA03JT12-247
O-247AB
GA03JT12
01E-49
00E-27
37E-10
97E-10
00E-3
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PDF
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IXEP1400
Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
Text: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.
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Original
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CH-2555
N1016,
IXEP1400
CPC7601
CPC1907B
CPC1106N
CPC1004N
CPC1006N
CPC1009N
CPC1114N
CPC1333
IX21844
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PDF
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Untitled
Abstract: No abstract text available
Text: GA06JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID @ Tc=150°C hFE Tc=25°C Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area
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Original
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GA06JT12-247
O-247AB
GA06JT12
08E-47
26E-28
73E-10
86E-10
90E-2
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PDF
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HCPL-322J
Abstract: No abstract text available
Text: GA08JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity
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Original
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GA08JT17-247
O-247AB
GA08JT17
73E-47
50E-27
77E-10
23E-10
50E-3
HCPL-322J
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PDF
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Untitled
Abstract: No abstract text available
Text: Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation GA15IDDJT22-FR4 VISO,min PDrive, cont PDrive,switch fMAX Features Package • RoHS Compliant Requires single 12 V voltage supply Two-voltage level topology with low drive losses
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Original
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GA15IDDJT22-FR4
GA50JT12-247
GA50SICP12-227
GA100SICP12-227
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PDF
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