HGTD8P50G1S9A Search Results

TRANZORB

Abstract: HGTD8P50G1 HGTD8P50G1S
Contextual Info: HGTD8P50G1, HGTD8P50G1S S E M I C O N D U C T O R 8A, 500V P-Channel IGBTs March 1997 Features Package JEDEC TO-251AA • 8A, 500V • 3.7V VCE SAT • Typical Fall Time - 1800ns EMITTER COLLECTOR GATE • High Input Impedance (FLANGE) COLLECTOR • TJ = +150oC

EM- 546 motor

Abstract: G8P50G 2S2A
Contextual Info: HGTD8P50G1, HGTD8P50G1S HARRIS S E M I C O N D U C T O R 8A, 5 0 0 V P - C h a n n e l I G B T s March 1997 Features Pa ckage JEDEC TO-251 AA • 8A, s o o v • 3.7V V CE SAT EMITTER COLLE CTO R GATE • T y p ic a l Fall T i m e - 1 8 0 0 n s • H ig h I n p u t I m p e d a n c e

Contextual Info: HGTD8P50G1, HGTD8P50G1S H A R R IS S E M I C O N D U C T O R 8A, 500V P-Channel IGBTs March 1997 Features Package JEDEC TO-251AA • 8A, 500V • 3.7V V ce sat EMITTER COLLECTOR GATE • Typical Fall Time - 1800ns • High Input Impedance (FLANGE) COLLECTOR

G8P50G

Abstract: tranzorb diode P channel IGBT tranzorb 400v TA49015 TRANZORB HGTD8P50G1 HGTD8P50G1S HGTD8P50G1S9A
Contextual Info: HGTD8P50G1, HGTD8P50G1S 8A, 500V P-Channel IGBTs March 1997 Features Package JEDEC TO-251AA • 8A, 500V • 3.7V VCE SAT • Typical Fall Time - 1800ns EMITTER COLLECTOR GATE • High Input Impedance (FLANGE) COLLECTOR • TJ = +150oC Description JEDEC TO-252AA

tranzorb diode

Abstract: G8P50G TRANZORB P channel IGBT HGTD8P50G1S HGTD8P50G1
Contextual Info: HGTD8P50G1, HGTD8P50G1S S E M I C O N D U C T O R 8A, 500V P-Channel IGBTs May 1996 Features Package JEDEC TO-251AA • 8A, 500V • 3.7V VCE SAT • Typical Fall Time - 1800ns EMITTER COLLECTOR GATE • High Input Impedance (FLANGE) COLLECTOR • TJ = +150oC