HGTD7N60C3S9A Search Results

Contextual Info: HAFRFRIS S E M I C O N D U C T O R HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBTs January 1997 Packaging Features j e d e c t o - 22oab • 14A, 600V at Tc = 25°C • 600V Switching SOA Capability • Typical Fall T i m e . 140ns at T j = 150°C

G7N60C3

Abstract: g7n60c HGTD7N60C3S9A HGTD7N60C3S HGTP7N60C3 LD26 RHRD660
Contextual Info: HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

G7N60C3

Abstract: G7N60 g7n60c HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 RHRD660
Contextual Info: HGTD7N60C3S, HGTP7N60C3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state

G7N60C3

Contextual Info: HGTD7N60C3S, HGTP7N60C3 Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

g7n60c

Abstract: G7N60 G7N60C3 HGTD7N60C3 HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 RHRD660
Contextual Info: HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT June 1996 Features Packaging • 14A, 600V at TC = +25oC • • • • JEDEC TO-220AB EMITTER 600V Switching SOA Capability Typical Fall Time - 140ns at TJ = +150oC

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

G7N60

Abstract: G7N60C3 G7N60C HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 LD26 RHRD660
Contextual Info: HGTD7N60C3S, HGTP7N60C3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the

g7n60c

Abstract: G7N60 G7N60C3 HGTD7N60C3 HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 RHRD660
Contextual Info: HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBTs January 1997 Features Packaging • 14A, 600V at TC = 25oC • • • • JEDEC TO-220AB EMITTER 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC

G7N60C3

Abstract: g7n60c G7N60 TA49115 HGTD7N60C3S HGTD7N60C3S9A HGTP7N60C3 LD26 RHRD660
Contextual Info: HGTD7N60C3S, HGTP7N60C3 in t e r r ii J a n u a ry . m i D ata S h eet 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have