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    Abstract: No abstract text available
    Text: BVDSS = 600 V RDS on typ = 2.0 Ω HFW5N60S / HFI5N60S ID = 4.5 A 600V N-Channel MOSFET D2-PAK I2-PAK FEATURES  Originative New Design HFW5N60S  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFI5N60S 1.Gate 2. Drain 3. Source


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