HFE-200 TO-92 NPN Search Results

HFE-200 TO-92 NPN Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
CA3083Z-G	Rochester Electronics LLC	CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN
ADC1038CIWM	Rochester Electronics LLC	ADC, Successive Approximation, 10-Bit, 1 Func, 8 Channel, Serial Access, PDSO20, SOP-20

HFE-200 TO-92 NPN Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SC2001 Abstract: No abstract text available Text: 2SC2001 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High hFE and low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ) Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol	Original	PDF	2SC2001 100mA) 700mA) 100mA 700mA, 30MHz
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SC2001 TRANSISTOR NPN 1. EMITTER FEATURES z High hFE and Low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ) 2. COLLECTOR 3. BASE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)	Original	PDF	2SC2001 100mA) 700mA) 100mA 700mA, 30MHz
2SC2001 Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2001 TO-92 TRANSISTOR NPN FEATURES z High hFE and low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ) 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 MAXIMUM RATINGS(TA=25℃ unless otherwise noted)	Original	PDF	2SC2001 100mA) 700mA) 100mA 700mA, 30MHz 2SC2001
2SJ74 Abstract: 2SC3136 2SK118 2SC1815 2SA1015 2SC1815 2sc2240 equivalent 2SA1349 2SA1015 2SK241 2SC2348 Text: 主要特性一覧表 [2] [ 2 ] 主要特性一覧表 TO-92 タイプ SC-43 1. TO-92 <トランジスタ> 形名 NPN 2SC1815 PNP 2SA1015 O: 70~140 VCEO IC PC (V) (mA) (mW) 50 150 400 Y: 120~240  2SC732TM L L 2SC1815○ 2SA1015○ hFE 70~700/ 400 GR: 200~400	Original	PDF	SC-43) 2SC1815 2SA1015 2SC732TM 2SC1815 2SC2240 2SA970 2SC3381 2SA1349 2SJ74 2SC3136 2SK118 2SC1815 2SA1015 2sc2240 equivalent 2SA1349 2SA1015 2SK241 2SC2348
transistor mpsa 42 Abstract: transistor mpsa 250 transistor mpsa 93 transistor mpsa 92 transistor mpsa 13 MPSA92 transistor mpsa 42 npn mpsa MPSA 92 mpsa 42 Text: MPSA 92 / 93 PNP Silicon Expitaxial Planar Transistor for high voltage switching and amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MPSA 42 and MPSA 43 are recommended.	Original	PDF	20MHz transistor mpsa 42 transistor mpsa 250 transistor mpsa 93 transistor mpsa 92 transistor mpsa 13 MPSA92 transistor mpsa 42 npn mpsa MPSA 92 mpsa 42
transistor mpsa 250 Abstract: transistor mpsa 42 transistor mpsa 92 Text: MPSA 92 / 93 PNP Silicon Expitaxial Planar Transistor for high voltage switching and amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MPSA 42 and MPSA 43 are recommended.	Original	PDF	20MHz transistor mpsa 250 transistor mpsa 42 transistor mpsa 92
transistor mpsa 250 Abstract: transistor mpsa 42 transistor mpsa 93 transistor mpsa 42 npn mpsa 92 42 92 transistor mpsa npn Text: MPSA 92 / 93 PNP Silicon Expitaxial Planar Transistor for high voltage switching and amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MPSA 42 and MPSA 43 are recommended.	Original	PDF	20MHz transistor mpsa 250 transistor mpsa 42 transistor mpsa 93 transistor mpsa 42 npn mpsa 92 42 92 transistor mpsa npn
MPS3904 Abstract: 2N5087 2N5088 2N5089 BC550C BC560C MPS6521 MPS6523 MPSA18 MPS-A63 Text: ON Semiconductor Selector Guide – Discrete Devices Plastic–Encapsulated Transistors continued Table 2. Plastic–Encapsulated Low–Noise and Good hFE Linearity hFE @ IC NPN PNP V(BR)CEO Volts Min Max mA 250 380 500 100 350 450 300 800 800 — 300 —	Original	PDF	226AA BC550C MPSA18 MPS3904 2N5088 2N5089 MPS6521 2N5087 BC560C MPS6523 MPS3904 2N5087 2N5088 BC550C BC560C MPS6521 MPS6523 MPSA18 MPS-A63
MPS651 Abstract: MPS651G MPS651RLRAG MPS651RLRM MPS750 MPS751 MPS650 MPS650G MPS650RLRAG MPS650ZL1G Text: NPN − MPS650, MPS651; PNP − MPS750, MPS751 MPS651 and MPS751 are Preferred Devices Amplifier Transistors Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MPS650; MPS750 MPS651; MPS751	Original	PDF	MPS650, MPS651; MPS750, MPS751 MPS651 MPS751 MPS650; MPS750 MPS651G MPS651RLRAG MPS651RLRM MPS750 MPS650 MPS650G MPS650RLRAG MPS650ZL1G
80515 Abstract: Q62702-Z2035 Q62702-Z2036 Q62702-Z2037 Q62702-Z2038 MARKING 93 Text: NPN Silicon High-Voltage Transistors PZTA 42 PZTA 43 High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: PZTA 92, PZTA 93 PNP ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) PZTA 42	Original	PDF	Q62702-Z2035 Q62702-Z2036 OT-223 80515 Q62702-Z2035 Q62702-Z2036 Q62702-Z2037 Q62702-Z2038 MARKING 93
2N6426 Abstract: No abstract text available Text: 2N6426, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage	Original	PDF	2N6426* 2N6427 2N6426, 2N6426 2N6426G 2N6426RLRA 2N6427 2N6427RLRA 2N6427RLRAG BRD8011/D.
MPS650 Abstract: MPS650RLRA MPS65 MPS650G MPS650RLRAG MPS651 MPS750 MPS751 MPS651G MPS751ZL1G Text: MPS650, MPS651, NPN MPS750, MPS751, PNP MPS651 and MPS751 are Preferred Devices Amplifier Transistors Features • Pb−Free Packages are Available* http://onsemi.com MAXIMUM RATINGS Symbol MPS650 MPS750 MPS651 MPS751 Unit Collector −Emitter Voltage VCE	Original	PDF	MPS650, MPS651, MPS750, MPS751, MPS651 MPS751 MPS650 MPS750 MPS651 MPS751 MPS650 MPS650RLRA MPS65 MPS650G MPS650RLRAG MPS750 MPS651G MPS751ZL1G
mps 222A Abstract: mps2222 equivalent MPS2222A Transistors MPS2222A 222A MPS2 mps2222 Text: MPS2222, MPS2222A MPS2222A is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage Value VCEO MPS2222 MPS2222A Collector–Base Voltage 30 40 MPS2222 MPS2222A 1 EMITTER	Original	PDF	MPS2222, MPS2222A MPS2222A MPS2222 mps 222A mps2222 equivalent Transistors MPS2222A 222A MPS2
Untitled Abstract: No abstract text available Text: NPN − MPS650, MPS651; PNP − MPS750, MPS751 MPS651 and MPS751 are Preferred Devices Amplifier Transistors Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage MPS650; MPS750	Original	PDF	MPS650, MPS651; MPS750, MPS751 MPS651 MPS751 MPS650; MPS750

mps 222A Abstract: mps2222 equivalent mps2222a mps2222 222A MPS2 Transistors MPS2222A MPS2 Text: MPS2222, MPS2222A MPS2222A is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage VCEO MPS2222 MPS2222A Collector −Base Voltage Value 30 40 MPS2222 MPS2222A 1	Original	PDF	MPS2222, MPS2222A MPS2222A MPS2222 mps 222A mps2222 equivalent 222A MPS2 Transistors MPS2222A MPS2
mps 222A Abstract: mps2222 equivalent MPS2222A MPS2222 Transistors MPS2222A MPS2222AG MPS2222RLRPG MPS2222G 222A MPS2 MPS2222ARLG Text: MPS2222, MPS2222A MPS2222A is a Preferred Device General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MPS2222 MPS2222A Collector −Base Voltage	Original	PDF	MPS2222, MPS2222A MPS2222A MPS2222 mps 222A mps2222 equivalent MPS2222 Transistors MPS2222A MPS2222AG MPS2222RLRPG MPS2222G 222A MPS2 MPS2222ARLG
PN5416 Abstract: 2N5415 Text: 18 Small Signal Leaded Devices High Voltage Transistors n Type hFE min @ ^CE sat @ c max (V) (mA) 'c (mA) fT min (MHz) @ 'c Pkg (V) c (mA) TO-39 TO-39 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 350 250 140 160 300 200 350 250 1000 1000 600 600 500 500 1000 1000	OCR Scan	PDF	2N3439 2N5550 2N5551 PSA42 PSA43 PN3439 PN3440 2N5400 2N5401 2N5415 PN5416
TIPI27 Abstract: No abstract text available Text: TOSHIBA {DISCRETE/OPTO! ' ÌQ d \| ^7250 0GlbLH3 5 \| ~ T- z ? - 2 5 K2E3S3S Sm all Signal Transistor Type No, Vceo SOT-23MOD TO-92 V (mA) HFE V ce(V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 100-300 1.0 10 2N3905 YTS3905 -4 0	OCR Scan	PDF	OT-23MOD 2N3903 YTS3903 2N3904 YTS3904 2N3905 YTS3905 2N3906 YTS3906 2N4123 TIPI27
ST3904 Abstract: NS3903 TIS92 2N2926 NS3904 2n2926 ses 2N915 MPQ3904 2N3694 2N2712 Text: NPN Transistors Case Style Vcbo V Min vCEO (V) Min Vebo (V) Min 2N2712 TO-92 (94) 1B 18 2N2714 TO-92 (94) 18 2N2923 TO-92 (94) 2N2924 VCE(SAT) VBE(SAT) A m p lifie r s . C0b (PF) Max a n d S w itc h e s toff (ns) Max NF (dB) Max Test Conditions Process No.	OCR Scan	PDF
PN544 Abstract: TI59 national 2N3859 2N2712 2N915 MPQ2222 MPQ6700 T1890 TN2219 PN101 Text: This NPN Transistors NATL @ . VCE SAT VBE(SAT) (V) (V) c Max Min Max v * C0b (PF) Max * ‘ off (ns) Max NF (dB) Max hFE Min Max 5 500 18 75 225 2 4.5 18 5 500 18 75 225 2 4.5 25 25 5 100 25 90 180 2 (1 kHz) 10 10 10 TO-92 (94) 25 25 5 100 25 150 300	OCR Scan	PDF	T-29-Of T-29-01 PN544 TI59 national 2N3859 2N2712 2N915 MPQ2222 MPQ6700 T1890 TN2219 PN101
Bc23b Abstract: BC207 BC337-16-5 BC237-5 BC320 BC208B BC209C BC237 BC237A BC237B Text: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. V EBO *CBO ^CB (V) (W) (\|iA) @ (V) Min 8Tc=25°c 0.625 45 BC207 50 BC208B 25 (A) 0.015 @ ^CE(SAT) (mA) 0 (V ) Min Max Max 0.1	OCR Scan	PDF	BC207 BC208B O-92-4 BC209C BC237 BC319 BC320 BC32QA BC320B Bc23b BC337-16-5 BC237-5 BC237A BC237B
BC337-16-5 Abstract: BC207 BC208B BC209C BC237 BC237A BC237B BC237C BC238 BC238B Text: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. V EBO *CBO ^CB (V) (W) (\|iA) @ (V) Min 8Tc=25°c 0.625 45 BC207 50 BC208B 25 (A) 0.015 @ ^CE(SAT) (mA) 0 (V ) Min Max Max 0.1	OCR Scan	PDF	BC207 BC208B O-92-4 BC209C BC237 BC319 BC320 BC32QA BC320B BC337-16-5 BC237A BC237B BC237C BC238 BC238B
SC1674 Abstract: bf 194B BF195D 195D 2N3866 2N917 2N918 SC1730 case to-106 Text: TELEVISION/VIDEO DEVICES / SEMICONDUCTORS a I.F./R.F. amplifiers and oscillators NPN PNP . Maximum Ratings TYPE Case: SOT-25 Case: To.92 Case:To.106 P d = 250 mW PD=200mW P d = 150 mW @Tac»25C y /B F i j ^BF BF /B F @ Ta-26C 194A 194B 195C 195D NPN PNP	OCR Scan	PDF	OT-25 Ta-26 O-105 O-106 O-220 100TP. 02U551 SC1674 bf 194B BF195D 195D 2N3866 2N917 2N918 SC1730 case to-106
case to-106 Abstract: SC1674 BF195C 195D 2N4080 2N917 10003 NPN BF194A BF 195D Text: ADVANI OERLIKON/ SEMICOND 3bE D OPblbMfi O Q Q D O n □ • SELI I -T-Z“I-Q\ TELEVISION/VIDEO DEVICES SEMICONDUCTORS a I.F ./R .F . amplifiers and oscillators NPN TYPE PNP Case: To.92 Case: SOT25 Pd = 250 mW PD=200 mW @ T8 25C Case: To.106 Pd = 150 mW	OCR Scan	PDF	OT-25 200mW Ta-26 O-105 O-106 O-220 020INOM. 0J07SI case to-106 SC1674 BF195C 195D 2N4080 2N917 10003 NPN BF194A BF 195D

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HFE-200 TO-92 NPN Search Results

HFE-200 TO-92 NPN Result Highlights (5)

HFE-200 TO-92 NPN Datasheets Context Search

2SC2001

Untitled

2SC2001

2SJ74

transistor mpsa 42

transistor mpsa 250

transistor mpsa 250

MPS3904

MPS651

80515

2N6426

MPS650

mps 222A

Untitled

mps 222A

mps 222A

PN5416

TIPI27

ST3904

PN544

Bc23b

BC337-16-5

SC1674

case to-106