HE68 Search Results

HMBTA13

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6842 Issued Date : 1994.07.29 Revised Date : 2002.12.27 Page No. : 1/4 HMBTA13 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor Absolute Maximum Ratings SOT-23 • Maximum Temperatures

SOT23 MARKING

Abstract: HMBTA14 HMBTA64
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2002.10.25 Page No. : 1/3 HMBTA64 PNP SILICON TRANSISTOR Description The HMBTA64 is designed for application requiring extremely high current gain at collector current to 500mA.

HMBT4403

Contextual Info: HI-SINCERITY Spec. No. : HE6818 Issued Date : 1993.06.30 Revised Date : 2004.08.30 Page No. : 1/5 MICROELECTRONICS CORP. HMBT4403 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT4403 is designed for general purpose applications requiring high breakdown voltages.

HBC848

Contextual Info: HI-SINCERITY Spec. No. : HE6843 Issued Date : 1994.07.29 Revised Date : 2008.01.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC848 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.

HMBT6520

Abstract: HMBT6517
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6836 Issued Date : 1994.07.20 Revised Date : 2004.09.08 Page No. : 1/4 HMBT6517 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT6517 is designed for general purpose applications requiring high breakdown voltages.

marking code SN sot23

Abstract: DIODE marking code PB PB40 BAT54 BAT54A BAT54C BAT54S HBAT54 HBAT54A HBAT54C
Contextual Info: HI-SINCERITY Spec. No. : HE6854 Issued Date : 1997.04.28 Revised Date : 2008.07.15 Page No. : 1/5 MICROELECTRONICS CORP. HBAT54 Series Description SOT-23 Silicon Schottky Barrier Double Diodes • HBAT54: Single Diode, also available as double diodes. • HBAT54A: Common Anode.

D9D TRANSISTOR

Abstract: SOT-23 marking D9D HMBT8050 transistor d9d npn D9D D9D SOT D9D sot23 d9d marking code HMBT8550 sot-23 d9d
Contextual Info: HI-SINCERITY Spec. No. : HE6812 Issued Date : 1992.08.25 Revised Date : 2004.08.17 Page No. : 1/4 MICROELECTRONICS CORP. HMBT8050 NPN EPITAXIAL TRANSISTOR Description The HMBT8050 is designed for general purpose amplifier applications. SOT-23 Features • High DC Current hFE=150-400 at IC=150mA

HE6851

Abstract: HBC858
Contextual Info: HI-SINCERITY Spec. No. : HE6851 Issued Date : 1994.09.02 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HBC858 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC858 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits.

HMBTA14

Contextual Info: HI-SINCERITY Spec. No. : HE6841 Issued Date : 1994.07.29 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HMBTA14 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor SOT-23 Absolute Maximum Ratings • Maximum Temperatures

HMBTA13

Contextual Info: HI-SINCERITY Spec. No. : HE6842 Issued Date : 1994.07.29 Revised Date : 2004.09.08 Page No. : 1/4 MICROELECTRONICS CORP. HMBTA13 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor SOT-23 Absolute Maximum Ratings • Maximum Temperatures

Contextual Info: HI-SINCERITY Spec. No. : HE6856 Issued Date : 1994.07.29 Revised Date : 2004.09.07 Page No. : 1/4 MICROELECTRONICS CORP. HMBTA56 PNP SILICON TRANSISTOR Description Amplifier Transistor SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature. -55 ~ +150 °C

HMBT2222A

Abstract: IC380
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6822 Issued Date : 1993.06.30 Revised Date : 2004.09.16 Page No. : 1/5 HMBT2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2222A is designed for general purpose amplifier and high-speed switching, medium-power switching applications.

HBC807

Contextual Info: HI-SINCERITY Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2004.08.30 Page No. : 1/4 MICROELECTRONICS CORP. HBC807 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBC807 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.

HMBT8599

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6811 Issued Date : 1997.12.31 Revised Date : 2002.10.25 Page No. : 1/3 HMBT8599 PNP EPITAXIAL PLANAR TRANSISTOR Description Amplifier Transistor Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature . -55 ~ +150 °C

HMBT5088

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6824 Issued Date : 1993.08.27 Revised Date : 2002.10.25 Page No. : 1/3 HMBT5088 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT5088 is designed for low noise, high gain, general purpose amplifier applications.

HMBT5551

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6838 Issued Date : 1994.07.29 Revised Date : 2002.10.25 Page No. : 1/3 HMBT5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT5551 is designed for general purpose applications requiring high Breakdown Voltages.

transistor a4y

Abstract: A4Y SOT23 HMBT1015
Contextual Info: HI-SINCERITY Spec. No. : HE6804 Issued Date : 1992.08.25 Revised Date : 2002.10.25 Page No. : 1/3 MICROELECTRONICS CORP. HMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification.

HBC817

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6831 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/3 HBC817 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.

HMBT4124

Abstract: ROC SOT 23
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6859 Issued Date : 1998.02.01 Revised Date : 2001.10.25 Page No. : 1/3 HMBT4124 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT4124 is designed for general purpose switching and amplifier applications.

HMBT5087

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6850 Issued Date : 1994.07.29 Revised Date : 2002.10.25 Page No. : 1/3 HMBT5087 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT5087 is designed for low noise, high gain, general purpose amplifier applications.

IC380

Abstract: HMBT2222A HIGH SPEED SWITCHING NPN SOT23
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6822 Issued Date : 1993.06.30 Revised Date : 2002.10.25 Page No. : 1/4 HMBT2222A NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2222A is designed for general purpose amplifier and high-speed switching, medium-power switching applications.

HMBT5086

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6849 Issued Date : 1994.07.29 Revised Date : 2002.10.25 Page No. : 1/3 HMBT5086 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT5086 is designed for low noise , high gain , general purpose amplifier applications.

HMBT2222A

Abstract: HMBT2907A
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6821 Issued Date : 1993.06.23 Revised Date : 2002.10.25 Page No. : 1/3 HMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT2907A is designed for general purpose amplifier and high -speed switching, medium power switching applications.

HLB122J

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6830 Issued Date : 1994.01.25 Revised Date : 2002.05.08 Page No. : 1/4 HLB122J NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122J is a medium power transistor designed for use in