HMBT5551
Abstract: No abstract text available
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6838 Issued Date : 1994.07.29 Revised Date : 2002.10.25 Page No. : 1/3 HMBT5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT5551 is designed for general purpose applications requiring high Breakdown Voltages.
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Original
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HE6838
HMBT5551
HMBT5551
OT-23
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PDF
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HMBT5551
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6838 Issued Date : 1994.07.29 Revised Date : 2004.09.07 Page No. : 1/4 MICROELECTRONICS CORP. HMBT5551 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT5551 is designed for general purpose applications requiring high Breakdown Voltages.
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Original
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HE6838
HMBT5551
HMBT5551
OT-23
200oC
183oC
217oC
260oC
245oC
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PDF
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RD SOT-23
Abstract: HMBT5401 HMBT5551
Text: HI-SINCERITY Spec. No. : HE6819 Issued Date : 1993.06.30 Revised Date : 2004.09.07 Page No. : 1/4 MICROELECTRONICS CORP. HMBT5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT5401 is designed for general purpose applications requiring high breakdown voltages.
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Original
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HE6819
HMBT5401
HMBT5401
OT-23
HMBT5551
183oC
217oC
260oC
RD SOT-23
HMBT5551
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PDF
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HMBT5401
Abstract: HMBT5551
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6819 Issued Date : 1993.06.30 Revised Date : 2002.10.25 Page No. : 1/3 HMBT5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT5401 is designed for general purpose applications requiring high breakdown voltages.
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Original
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HE6819
HMBT5401
HMBT5401
OT-23
HMBT5551
HMBT5551
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PDF
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