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    HE65 Price and Stock

    TE Connectivity SBCHE656RJ

    RES 56 OHM 5% 7W AXIAL
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    DigiKey SBCHE656RJ Bulk 975 1
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    TE Connectivity SBCHE65R6J

    RES 5.6 OHM 5% 7W AXIAL
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    DigiKey SBCHE65R6J Bulk 593 1
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    TE Connectivity SBCHE6560RJ

    RES 560 OHM 5% 7W AXIAL
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    DigiKey SBCHE6560RJ Bulk 369 1
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    TE Connectivity SBCHE65R6K

    RES 5.6 OHM 10% 7W AXIAL
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    DigiKey SBCHE65R6K Bulk 264 1
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    Avnet Americas SBCHE65R6K Reel 23 Weeks, 5 Days 1,000
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    Littelfuse Inc RHE650

    PTC RESET FUSE 16V 6.5A RADIAL
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    HE65 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HSD468

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6535 Issued Date : 1992.11.25 Revised Date : 2006.07.27 Page No. : 1/5 MICROELECTRONICS CORP. HSD468 NPN Epitaxial Planar Transistor Description The HSD468 is designed for general purpose low frequency power amplifier applications.


    Original     		PDF HE6535 HSD468 HSD468 150oC 200oC 183oC 217oC 260oC 245oC 10sec

    HSC1815

    Abstract: diode marking H2
    Text: HI-SINCERITY Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2006.07.28 Page No. : 1/4 MICROELECTRONICS CORP. HSC1815 NPN Epitaxial Planar Transistor Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.


    Original     		PDF HE6523 HSC1815 HSC1815 150oC 200oC 183oC 217oC 260oC 245oC 10sec diode marking H2

    HMBD914

    Abstract: t1s mark sot23 HE65
    Text: HI-SINCERITY Spec. No. : HE6538 Issued Date : 1997.01.18 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HMBD914 HIGH-SPEED SWITCHING DIODE Description SOT-23 The HMBD914 is designed for high-speed switching application in hybrid thick-and


    Original     		PDF HE6538 HMBD914 OT-23 HMBD914 OT-23) 183oC 217oC 260oC t1s mark sot23 HE65

    SD965

    Abstract: equivalent transistor HSD965 HSD965 HSD965 PIN he6537 transistor HSD965 HE6537 data sheet PT10M
    Text: HI-SINCERITY Spec. No. : HE6537 Issued Date : 1992.11.25 Revised Date : 2004.11.30 Page No. : 1/4 MICROELECTRONICS CORP. HSD965 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD965 is suited for use as AF output amplifier and flash unit. TO-92 Absolute Maximum Ratings


    Original     		PDF HE6537 HSD965 HSD965 183oC 217oC 260oC SD965 equivalent transistor HSD965 HSD965 PIN he6537 transistor HSD965 HE6537 data sheet PT10M

    HSD471A

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6518 Issued Date : 1993.02.24 Revised Date : 2004.07.21 Page No. : 1/5 MICROELECTRONICS CORP. HSD471A NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD471A is designed for use in drive and output stage of frequency amplifier applications.


    Original     		PDF HE6518 HSD471A HSD471A 183oC 217oC 260oC

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2004.12.28 Page No. : 1/4 MICROELECTRONICS CORP. HSC1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.


    Original     		PDF HE6523 HSC1815 HSC1815 183oC 217oC 260oC

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6527 Issued Date : 1993.01.15 Revised Date : 2005.02.14 Page No. : 1/4 MICROELECTRONICS CORP. HSC2228Y NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC2228Y is designed for high voltage amplifier applications. TO-92 Absolute Maximum Ratings


    Original     		PDF HE6527 HSC2228Y HSC2228Y 183oC 217oC 260oC

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6501 Issued Date : 1992.08.25 Revised Date : 2005.02.14 Page No. : 1/5 MICROELECTRONICS CORP. HSA1538S PNP EPITAXIAL PLANAR TRANSISTOR Description The HSA1538S is designed for use in high-definition CRT display video output, wide-band amplifier applications.


    Original     		PDF HE6501 HSA1538S HSA1538S 183oC 217oC 260oC

    H7805

    Abstract: H7805AA H7805BA vo 341k
    Text: HI-SINCERITY Spec. No. : HE6549 Issued Date : 1992.11.25 Revised Date : 2001.11.29 Page No. : 1/3 MICROELECTRONICS CORP. H7805AA H7805BA 3-TERMINAL POSITIVE VOLTAGE REGULATOR Description TO-92 These regulators employ internal current-limiting and thermalshutdown, making them essentially indestructible. They can deliver


    Original     		PDF HE6549 H7805AA H7805BA 100mA H7805AA, H7805 H7805AA H7805BA vo 341k

    HSC1815

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6523 Issued Date : 1992.11.25 Revised Date : 2001.06.06 Page No. : 1/3 HSC1815 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification.


    Original     		PDF HE6523 HSC1815 HSC1815

    HSB1426

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6506 Issued Date : 1994.03.25 Revised Date : 2002.02.08 Page No. : 1/3 HSB1426 PNP EPITAXIAL PLANAR TRANSISTOR Description DC-DC Converter Features TO-92 • Low Collector to Emitter Saturation Voltage Absolute Maximum Ratings


    Original     		PDF HE6506 HSB1426 HSB1426

    HSD468

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6535 Issued Date : 1992.11.25 Revised Date : 2002.02.08 Page No. : 1/4 HSD468 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD468 is designed for general purpose low frequency power amplifier applications.


    Original     		PDF HE6535 HSD468 HSD468

    HSD965

    Abstract: equivalent transistor HSD965 HSD965Q HSD965 PIN equivalent transistor HE6537 HE6537 HE6537 data sheet hsd965 equivalent transistor HSD965
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6537 Issued Date : 1992.11.25 Revised Date : 2002.02.22 Page No. : 1/3 HSD965 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD965 is suited for use as AF output amplifier and flash unit. Absolute Maximum Ratings


    Original     		PDF HE6537 HSD965 HSD965 equivalent transistor HSD965 HSD965Q HSD965 PIN equivalent transistor HE6537 HE6537 HE6537 data sheet hsd965 equivalent transistor HSD965

    HSC2228Y

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6527-B Issued Date : 1993.01.15 Revised Date : 2000.10.01 Page No. : 1/3 HSC2228Y NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC2228Y is designed for high voltage amplifier applications. Absolute Maximum Ratings


    Original     		PDF HE6527-B HSC2228Y HSC2228Y

    HSD882S

    Abstract: HSD882
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6544 Issued Date : 1992.11.25 Revised Date : 2002.01.25 Page No. : 1/4 HSD882S NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver.


    Original     		PDF HE6544 HSD882S HSD882S HSD882

    HTL194

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6549-B Issued Date : 1993.04.12 Revised Date : 2000.10.01 Page No. : 1/3 HTL194 PNP EPITAXIAL PLANAR TRANSISTOR Description The HTL194 is designed for high voltage low power switching applications especially for use in telephone and telecommunication


    Original     		PDF HE6549-B HTL194 HTL194

    HSB772S

    Abstract: HE6549
    Text: HI-SINCERITY Spec. No. : HE6549 Issued Date : 1992.11.25 Revised Date : 2004.08.13 Page No. : 1/5 MICROELECTRONICS CORP. HSB772S PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB772S is designed for using in output stage of 0.75W amplifier, voltage regulator, DC-DC converter and driver.


    Original     		PDF HE6549 HSB772S HSB772S 183oC 217oC 260oC HE6549

    HSB647A

    Abstract: HSD667A
    Text: HI-SINCERITY Spec. No. : HE6510 Issued Date : 1996.07.15 Revised Date : 2004.08.16 Page No. : 1/5 MICROELECTRONICS CORP. HSD667A SILICON NPN EPITAXIAL Description Low Frequency Power Amplifier Complementary Pair With HSB647A. TO-92 Absolute Maximum Ratings


    Original     		PDF HE6510 HSD667A HSB647A. 183oC 217oC 260oC HSB647A HSD667A

    HSA733

    Abstract: frequancy
    Text: HI-SINCERITY Spec. No. : HE6507 Issued Date : 1992.12.16 Revised Date : 2006.07.28 Page No. : 1/5 MICROELECTRONICS CORP. HSA733 PNP Epitaxial Planar Transistor Description The HSA733 is designed for use in driver stage of AF amplifier applications. TO-92 Absolute Maximum Ratings


    Original     		PDF HE6507 HSA733 HSA733 150oC 200oC 183oC 217oC 260oC 245oC 10sec frequancy

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6502 Issued Date : 1992.08.25 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HSC3953S NPN EPITAXIAL PLANAR TRANSISTOR Description High-definition CRT display video output, wide-band amplifier applications. TO-92


    Original     		PDF HE6502 HSC3953S 500MHz 183oC 217oC 260oC

    HTL194

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6549 Issued Date : 1993.04.12 Revised Date : 2005.02.15 Page No. : 1/4 MICROELECTRONICS CORP. HTL194 PNP EPITAXIAL PLANAR TRANSISTOR Description The HTL194 is designed for high voltage low power switching applications especially for use in telephone and telecommunication circuits.


    Original     		PDF HE6549 HTL194 HTL194 183oC 217oC 260oC

    HSB1426

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6506 Issued Date : 1994.03.25 Revised Date : 2004.11.30 Page No. : 1/4 MICROELECTRONICS CORP. HSB1426 PNP EPITAXIAL PLANAR TRANSISTOR Description DC-DC Converter TO-92 Features • Low Collector to Emitter Saturation Voltage Absolute Maximum Ratings


    Original     		PDF HE6506 HSB1426 183oC 217oC 260oC HSB1426

    85170

    Abstract: HSD468
    Text: HI-SINCERITY Spec. No. : HE6535 Issued Date : 1992.11.25 Revised Date : 2004.07.21 Page No. : 1/5 MICROELECTRONICS CORP. HSD468 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD468 is designed for general purpose low frequency power amplifier applications.


    Original     		PDF HE6535 HSD468 HSD468 183oC 217oC 260oC 85170

    HSB562

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6513-B Issued Date : 1993.01.15 Revised Date : 2000.10.01 Page No. : 1/4 HSB562 PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB562 is designed for general purpose low frequency power amplifier applications.


    Original     		PDF HE6513-B HSB562 HSB562