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    HAT1127H-EL-E Renesas Electronics Corporation Pch Single Power Mosfet -30V -40A 4.5Mohm Lfpak Visit Renesas Electronics Corporation

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    HAT1127H

    Abstract: hat1127h-el-e P Channel Power MOS FET Power Switching hat1127hele
    Text: HAT1127H Silicon P Channel Power MOS FET Power Switching REJ03G1330-0500 Rev.5.00 Jan 20, 2006 Features • • • • Capable of –4.5 V gate drive Low drive current High density mounting Ultra Low on-resistance RDS on = 3.6 mΩ typ. (at VGS = –10 V)


    Original     		PDF HAT1127H REJ03G1330-0500 PTZZ0005DA-A HAT1127H hat1127h-el-e P Channel Power MOS FET Power Switching hat1127hele

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    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    hat1127

    Abstract: HAT1127H
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF