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TDK Corporation C1608X7S1A475K080AC Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 10V 4.7uF X7S 10% T: 0.8mm
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TTI	C1608X7S1A475K080AC	Reel	1,256,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.0343	Buy Now
Molex 0430450212 Headers & Wire Housings 2 CKT VERT HEADER
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TTI	0430450212	Tray	75,504		48	1 - 10 - 100 $0.326 1000 $0.326 10000 $0.326	Buy Now
Vishay Intertechnologies CRCW040236K0FKED Thick Film Resistors - SMD 1/16watt 36Kohms 1% 100ppm
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TTI	CRCW040236K0FKED	Reel	60,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.00301	Buy Now
Molex 0022112042 Headers & Wire Housings VERT PCB HDR 4P GOLD FRICTION LOCK
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TTI	0022112042	Bulk	54,041		18	1 - 10 - 100 $0.276 1000 $0.276 10000 $0.263	Buy Now
Molex 0022112092 Headers & Wire Housings VERT PCB HDR 9P GOLD FRICTION LOCK
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TTI	0022112092	Bulk	30,376		6	1 - 10 $0.85 100 $0.85 1000 $0.85 10000 $0.85	Buy Now

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H943 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
H943		Gilway Technical Lamp	R7 Base Lampholders		Original	PDF
H9431		Gilway Technical Lamp	R7 Base Lampholders		Original	PDF
H9435S		Hi-Sincerity Mocroelectronics	30V P-channel MOSFET		Original	PDF

H943 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
H9435S Abstract: No abstract text available Text: HI-SINCERITY Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9435S • P-Channel Enhancement-Mode MOSFET -30V, -5.3A 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment Features	Original	PDF	MOS200509 H9435S H9435S Un150oC 200oC 183oC 217oC 260oC 245oC
"18 AWG" Abstract: H9431 Diode datasheet catalog holder lamp lamp holders Silicones Text: R7 Base Lampholders H943 Lamp Base Holder Maximum Ratings Wire R7s Ceramic 250 Volts 8 Amps 200°C 18 AWG Stranded Silicone Insulation 140mm Wire Length H9431 Lamp Base Holder Maximum Ratings Terminal Telephone: 781-935-4442 Fax: 781-938-5867 R7s Ceramic 250 Volts	Original	PDF	140mm H9431 "18 AWG" H9431 Diode datasheet catalog holder lamp lamp holders Silicones
H9435S Abstract: No abstract text available Text: HI-SINCERITY Spec. No. : MOS200509 # Issued Date : 2005.10.01 Revised Date : 2008.12.04 Page No. : 1/4 MICROELECTRONICS CORP. H9435S/H9435DS • P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment	Original	PDF	MOS200509( H9435S/H9435DS H9435S H9435DS 183oC 217oC 260oC 245oC H9435S H9435DS
H9435S Abstract: SO-8 V 052 Text: HI-SINCERITY Spec. No. : MOS200509 # Issued Date : 2005.10.01 Revised Date : 2010.07.08 Page No. : 1/5 MICROELECTRONICS CORP. H9435S/H9435DS • P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment	Original	PDF	MOS200509( H9435S/H9435DS H9435S H9435DS 217oC 260oC 245oC H9435S H9435DS SO-8 V 052
amplifier circuit diagram 10000 watt Abstract: No abstract text available Text: HMC943LP5E v02.0113 Amplifiers - Linear & Power - SMT GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Typical Applications Features The HMC943LP5E is ideal for: Saturated Output Power: +34 dBm @ 24% PAE • Point-to-Point Radios High Output IP3: +41 dBm	Original	PDF	HMC943LP5E HMC943LP5E amplifier circuit diagram 10000 watt
amplifier circuit diagram 10000 watt Abstract: HMC943LP5E Text: HMC943LP5E v01.0511 Amplifiers - Linear & Power - Chip Amplifiers - Linear & Power - SMT 3 9 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Typical Applications Features The HMC943LP5E is ideal for: Saturated Output Power: +34 dBm @ 24% PAE • Point-to-Point Radios	Original	PDF	HMC943LP5E HMC943LP5E amplifier circuit diagram 10000 watt
H9435S Abstract: h4422 H9435 H943 Text: HI-SINCERITY Spec. No. : MOS200907 Issued Date : 2009.03.09 Revised Date : Page No. : 1/5 MICROELECTRONICS CORP. H4422S • N-Channel Enhancement-Mode MOSFET 30V, 11A 8-Lead Plastic SO-8 Package Code: S H4422S Symbol & Pin Assignment Features • RDS(on)=13.5mΩ@VGS=10V, ID=11A	Original	PDF	MOS200907 H4422S H4422S 183oC 217oC 260oC 245oC H9435S h4422 H9435 H943
autotransformer starter medium voltage Abstract: H9208 relay HM 810 Text: www.toshiba.com/ind 2013 Toshiba International Corporation • Rev. 130222 Industrial Catalog 2013 13131 W. Little York Road • Houston, TX 77041 Tel: 713-466-0277 Fax: 713-466-8773 US: 800-231-1412 Canada: 800-872-2792 Mexico: 800-527-1204 2013 Industrial Catalog	Original	PDF
h945 Abstract: H944 transistor h945 h965 h946 H948 IR1518 BCM56800 h945 transistor H808 Text: LatticeECP3 and Broadcom 10 Gbps Physical/MAC Layer Interoperability July 2010 Technical Note TN1218 Introduction This technical note describes a Physical/MAC layer 10-Gigabit Ethernet interoperability test between a LatticeECP3 device and the Broadcom BCM56800 network switch. The test exercises the Physical/MAC layer	Original	PDF	TN1218 10-Gigabit BCM56800 h945 H944 transistor h945 h965 h946 H948 IR1518 h945 transistor H808
amplifier circuit diagram 10000 watt Abstract: 130025 H943 QFN "100 pin" PACKAGE Text: HMC943LP5E v00.0910 AMPLIFIERS - LINEAR & POWER - CHIP AMPLIFIERS - LINEAR & POWER - SMT 3 9 GaAs pHEMT MMIC 1.5 WATT POWER AMPLIFIER, 24 - 31.5 GHz Typical Applications Features The HMC943LP5E is ideal for: Saturated Output Power: +34 dBm @ 24% PAE • Point-to-Point Radios	Original	PDF	HMC943LP5E HMC943LP5E amplifier circuit diagram 10000 watt 130025 H943 QFN "100 pin" PACKAGE
H9435S Abstract: diode marking 91a marking CODE 91A h4435 91A MARKING Text: HI-SINCERITY Spec. No. : MOS200101 Issued Date : 2008.01.12 Revised Date :2009.02.06 Page No. : 1/5 MICROELECTRONICS CORP. H4435S • P-Channel Enhancement-Mode MOSFET -30V, -9.1A) 8-Lead Plastic SO-8 Package Code: S H4435S Symbol & Pin Assignment Features	Original	PDF	MOS200101) H4435S H4435S 183oC 217oC 260oC 245oC H9435S diode marking 91a marking CODE 91A h4435 91A MARKING
Untitled Abstract: No abstract text available Text: HMC943LP5E v02.0113 Amplifiers - lineAr & power - smT Gaas pHEMT MMIC 1.5 WaTT pOWER aMpLIFIER, 24 - 31.5 GHz Typical applications Features The HmC943lp5e is ideal for: saturated output power: +34 dBm @ 24% pAe • point-to-point radios High output ip3: +41 dBm	Original	PDF	HMC943LP5E HMC943LP5E
h946 Abstract: H945 H944 h965 H924 h940 295050 transistor h945 H948 transistor BC rx Text: LatticeECP3 and Marvell 10 Gbps Physical/MAC Layer Interoperability July 2010 Technical Note TN1219 Introduction This technical note describes a Physical/MAC Layer 10-Gigabit Ethernet interoperability test between a LatticeECP3 device and the Marvell Alaska 88X2040 device. The test exercises the Physical/MAC Layer up to	Original	PDF	TN1219 10-Gigabit 88X2040 h946 H945 H944 h965 H924 h940 295050 transistor h945 H948 transistor BC rx
Untitled Abstract: No abstract text available Text: THIRD ANñl F DO NOT S C A L E DIMENSIONS M IN mm E T R I C ir - Z lZ • - PROJECTION NOTES: 1 T OL E R A N C E S U N LE S S O T H E R W I S E SPECIFIED: ±0,75 2 FOR A P P L I C A T I O N 3 FOR P E R F O R M A N C E R E Q U I R E M E N T S SEE AMP S P E C . 108-19064	OCR Scan	PDF	54UCTS H-9434 EH-09

Untitled Abstract: No abstract text available Text: DO NOT S C A L E DIMENSIONS T H ff? fi METRIC IN m m PROJECTION - CX 2 ,7 NOTES: 1,0 7 TOLERANCES UNLESS OTHERWISE SPECIFIED: 2 FOR A P P L I C A T I O N 3 F OR P E R F O R M A N C E R E Q U I R E M E N T S INFORMATION SEE ±0,7 5 AMP S P E C . 7 14-7 907 9.	OCR Scan	PDF