Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    H5N25 Search Results

    H5N25 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    H5N2508DL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 7A 630Mohm DPAK(L)-(2)/To-251 Visit Renesas Electronics Corporation
    H5N2505DSTL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 5A 890Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
    H5N2503P-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 50A 55Mohm To-3P Visit Renesas Electronics Corporation
    H5N2513PL-E Renesas Electronics Corporation N Channel MOSFET High Speed Power Switching, TO-3PL, /Tube Visit Renesas Electronics Corporation
    H5N2522LSTL-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 20A 180Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    SF Impression Pixel

    H5N25 Price and Stock

    Rochester Electronics LLC H5N2513PL-E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H5N2513PL-E Bulk 18
    • 1 -
    • 10 -
    • 100 $17.36
    • 1000 $17.36
    • 10000 $17.36
    		Buy Now

    Rochester Electronics LLC H5N2512FN-E

    N-CHANNEL POWER MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H5N2512FN-E Bulk 82
    • 1 -
    • 10 -
    • 100 $3.66
    • 1000 $3.66
    • 10000 $3.66
    		Buy Now

    Renesas Electronics Corporation H5N2522LSTL-E

    MOSFET N-CH 250V 20A 4LDPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H5N2522LSTL-E Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Rochester Electronics LLC H5N2521FN-E-T2

    POWER FIELD-EFFECT TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H5N2521FN-E-T2 Bulk 286
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.05
    • 10000 $1.05
    		Buy Now

    Rochester Electronics LLC H5N2521FN-E-AR

    POWER FIELD-EFFECT TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey H5N2521FN-E-AR Bulk 286
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.05
    • 10000 $1.05
    		Buy Now
    Find more H5N25 price and stock on Findchips.com

    H5N25 Datasheets (54)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H5N2501LD Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    H5N2501LM Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    H5N2501LS Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    H5N2501LSTL-E Renesas Technology Transistor Mosfet N-CH 250V 18A 3LDPAK(S)-(1) T/R Original PDF
    H5N2502CF Renesas Technology Transistors> Switching/MOSFETs Original PDF
    H5N2503P Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    H5N2503P Renesas Technology MOSFET, Switching; VDSS (V): 250; ID (A): 50; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.04; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff ( us) typ: 0.22; Package: TO-3P Original PDF
    H5N2503P Renesas Technology Silicon N Channel MOS FET Original PDF
    H5N2503P-E Renesas Technology FET Transistor: Silicon N Channel MOS FET High Speed Power Switching Original PDF
    H5N2504DL Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    H5N2504DL Renesas Technology MOSFET, Switching; VDSS (V): 250; ID (A): 7; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.48; RDS (ON) typ. (ohm) @4V[4.5V]: 0.5; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 570; toff ( us) typ: 0.07; Package: DPAK (L)- (2) Original PDF
    H5N2504DL Renesas Technology Silicon N Channel MOS FET Original PDF
    H5N2504DL-E Renesas Technology FET Transistor: Silicon N Channel MOS FET High Speed Power Switching Original PDF
    H5N2504DS Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    H5N2504DS Renesas Technology MOSFET, Switching; VDSS (V): 250; ID (A): 7; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.48; RDS (ON) typ. (ohm) @4V[4.5V]: 0.5; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 570; toff ( us) typ: 0.07; Package: DPAK (S) Original PDF
    H5N2504DS Renesas Technology Silicon N Channel MOS FET Original PDF
    H5N2504DS-E Renesas Technology FET Transistor: Silicon N Channel MOS FET High Speed Power Switching Original PDF
    H5N2505DL Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    H5N2505DL Renesas Technology Silicon N Channel MOS FET Original PDF
    H5N2505DL Renesas Technology MOSFET, Switching; VDSS (V): 250; ID (A): 5; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.68; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 300; toff ( us) typ: 0.046; Package: DPAK (L)- (2) Original PDF

    H5N25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H5N2501LD

    Abstract: H5N2501LM H5N2501LS H5N2501LSTL-E PRSS0004AE-A PRSS0004AE-C Package Code 22
    Text: H5N2501LD, H5N2501LS, H5N2501LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1250-0200 Rev.2.00 Jul.21,2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B


    Original     		PDF H5N2501LD, H5N2501LS, H5N2501LM REJ03G1250-0200 PRSS0004AE-A PRSS0004AE-B PRSS0004AE-C H5N2501LS H5N2501LD H5N2501LD H5N2501LM H5N2501LS H5N2501LSTL-E PRSS0004AE-C Package Code 22

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet H5N2501LD, H5N2501LS, H5N2501LM Silicon N Channel MOS FET High Speed Power Switching R07DS0056EJ0300 Previous: REJ03G1250-0200 Rev.3.00 Jul 23, 2010 Features • Low on-resistance RDS(on) = 0.14  typ. (at ID = 9 A, VGS = 10 V, Ta = 25C)


    Original     		PDF H5N2501LD, H5N2501LS, H5N2501LM R07DS0056EJ0300 REJ03G1250-0200) PRSS0004AE-A PRSS0004AE-B PRSS0004AE-C H5N2501LS

    Hitachi DSA0076

    Abstract: H5N2503P
    Text: H5N2503P Silicon N Channel MOS FET High Speed Power Switching ADE-208-1374 Z 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 0.04 typ. Low leakage current: IDSS = 1 µA max (at VDS = 250 V) High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A)


    Original     		PDF H5N2503P ADE-208-1374 Hitachi DSA0076 H5N2503P

    Hitachi MOSFET

    Abstract: Hitachi DSA002730
    Text: H5N2509P Silicon N-Channel MOSFET High-Speed Power Switching ADE-208-1378 Z 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 0.053 Ω typ. (ID=15A, VGS=10V) Low drain cut-off current: IDSS = 1 µA max (at VDS = 250 V, VGS=0)


    Original     		PDF H5N2509P ADE-208-1378 D-85622 Hitachi MOSFET Hitachi DSA002730

    Hitachi DSA0076

    Abstract: H5N2509P
    Text: H5N2509P Silicon N Channel MOSFET High Speed Power Switching ADE-208-1378 Z Target Specification 1st. Edition Mar. 2001 Features • • • • • Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings : RDS(on) = 0.053 Ω typ.


    Original     		PDF H5N2509P ADE-208-1378 Hitachi DSA0076 H5N2509P

    H5N2512FN-E

    Abstract: H5N2512FN
    Text: ` H5N2512FN Silicon N Channel MOS FET High Speed Power Switching REJ03G1767-0100 Rev.1.00 Jul 02, 2009 Features • • • • Low on-resistance Low leakage current High speed switching Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AB-A


    Original     		PDF H5N2512FN REJ03G1767-0100 PRSS0003AB-A O-220FN) H5N2512FN-E H5N2512FN

    h5n2507p

    Abstract: No abstract text available
    Text: Preliminary Datasheet H5N2507P R07DS0877EJ0200 Previous: RJJ03G0646-0100 Rev.2.00 Sep 12, 2012 250V - 50A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.04  typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C)  Low leakage current


    Original     		PDF H5N2507P R07DS0877EJ0200 RJJ03G0646-0100) PRSS0004ZE-A h5n2507p

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet H5N2504DL, H5N2504DS R07DS0399EJ0300 Previous: REJ03G1106-0200 Rev.3.00 May 16, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • • • • • Low on-resistance Low leakage current High speed switching Low gate charge


    Original     		PDF H5N2504DL, H5N2504DS R07DS0399EJ0300 REJ03G1106-0200) PRSS0004ZD-B PRSS0004ZD-C

    H5N2509P

    Abstract: H5N2509P-E PRSS0004ZE-A SC-65
    Text: H5N2509P Silicon N Channel MOS FET High Speed Power Switching REJ03G1109-0200 Previous: ADE-208-1378 Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: R DS (on) = 0.053 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V)


    Original     		PDF H5N2509P REJ03G1109-0200 ADE-208-1378) PRSS0004ZE-A H5N2509P H5N2509P-E PRSS0004ZE-A SC-65

    Hitachi DSA0076

    Abstract: H5N2510DL H5N2510DS Silicon N Channel MOS FET High Speed Power Switching dpak code
    Text: H5N2510DL, H5N2510DS Silicon N Channel MOS FET High Speed Power Switching ADE-208-1379 Z Target Specification 1st. Edition Mar. 2001 Features • Low on-resistance • Low drive current • High speed switching Outline DPAK-2 4 4 1 2 D 3 H5N2510DS G 1 2


    Original     		PDF H5N2510DL, H5N2510DS ADE-208-1379 H5N2510DL Hitachi DSA0076 H5N2510DL H5N2510DS Silicon N Channel MOS FET High Speed Power Switching dpak code

    Hitachi DSA0076

    Abstract: H5N2505DL H5N2505DS Silicon N Channel MOS FET High Speed Power Switching dpak code
    Text: H5N2505DL, H5N2505DS Silicon N Channel MOS FET High Speed Power Switching ADE-208-1376 Z Target Specification 1st. Edition Mar. 2001 Features • Low on-resistance • Low drive current • High speed switching Outline DPAK-2 4 4 1 2 D 3 H5N2505DS G 1 2


    Original     		PDF H5N2505DL, H5N2505DS ADE-208-1376 H5N2505DL Hitachi DSA0076 H5N2505DL H5N2505DS Silicon N Channel MOS FET High Speed Power Switching dpak code

    FET 4900

    Abstract: H5N2519P H5N2519P-E
    Text: H5N2519P Silicon N Channel MOS FET High Speed Power Switching REJ03G0478-0200 Rev.2.00 Nov.19.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D 1. Gate 2. Drain Flange 3. Source G S 1 2 3 Absolute Maximum Ratings


    Original     		PDF H5N2519P REJ03G0478-0200 Unit2607 FET 4900 H5N2519P H5N2519P-E

    H5N2505DL

    Abstract: H5N2505DL-E H5N2505DS H5N2505DSTL-E PRSS0004ZD-B PRSS0004ZD-C
    Text: H5N2505DL, H5N2505DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1107-0300 Rev.3.00 Oct 16, 2006 Features • • • • • Low on-resistance Low drive current High speed switching Low gate change Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B


    Original     		PDF H5N2505DL, H5N2505DS REJ03G1107-0300 PRSS0004ZD-B PRSS0004ZD-C H5N2505DL H5N2505DL-E H5N2505DS H5N2505DSTL-E PRSS0004ZD-B PRSS0004ZD-C

    H5N2522LS

    Abstract: H5N2522LSTL-E
    Text: Preliminary Datasheet H5N2522LS R07DS0057EJ0200 Previous: REJ03G1667-0100 Rev.2.00 Jul 23, 2010 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.14  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Low leakage current


    Original     		PDF H5N2522LS R07DS0057EJ0200 REJ03G1667-0100) PRSS0004AE-B dissipatio9044 H5N2522LS H5N2522LSTL-E

    dpak code

    Abstract: H5N2510DL H5N2510DS H5N2510DSTL-E PRSS0004ZD-B PRSS0004ZD-C
    Text: H5N2510DL, H5N2510DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1110-0200 Previous: ADE-208-1379 Rev.2.00 Sep 07, 2005 Features • Low on-resistance • Low drive current • High speed switching Outline RENESAS Package code: PRSS0004ZD-B


    Original     		PDF H5N2510DL, H5N2510DS REJ03G1110-0200 ADE-208-1379) PRSS0004ZD-B PRSS0004ZD-C dpak code H5N2510DL H5N2510DS H5N2510DSTL-E PRSS0004ZD-B PRSS0004ZD-C

    H5N2505DL

    Abstract: H5N2505DL-E H5N2505DS H5N2505DSTL-E PRSS0004ZD-B PRSS0004ZD-C
    Text: H5N2505DL, H5N2505DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1107-0200 Previous: ADE-208-1376 Rev.2.00 Sep 07, 2005 Features • Low on-resistance • Low drive current • High speed switching Outline RENESAS Package code: PRSS0004ZD-B


    Original     		PDF H5N2505DL, H5N2505DS REJ03G1107-0200 ADE-208-1376) PRSS0004ZD-B PRSS0004ZD-C H5N2505DL H5N2505DL-E H5N2505DS H5N2505DSTL-E PRSS0004ZD-B PRSS0004ZD-C

    Hitachi DSA0076

    Abstract: ADE-208-1377 H5N2508DL H5N2508DS
    Text: H5N2508DL, H5N2508DS Silicon N Channel MOS FET High Speed Power Switching ADE-208-1377 Z 1st. Edition Mar. 2001 Features • • • • • Low on-resistance: R DS(on) = 0.48 typ. Low leakage current: IDSS = 1 µA max (at VDS = 250 V) High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A)


    Original     		PDF H5N2508DL, H5N2508DS ADE-208-1377 H5N2508DL Hitachi DSA0076 ADE-208-1377 H5N2508DL H5N2508DS

    H5N2512CF

    Abstract: H5N3007CF Diode BAY 32
    Text: H5N2512CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0481-0100 Rev.1.00 Nov.26.2004 Features • • • • Low on-resistance Low leakage current High Speed Switching Built-in fast recovery diode Outline TO-220CFM D 1. Gate 2. Drain 3. Source


    Original     		PDF H5N2512CF REJ03G0481-0100 O-220CFM Unit2607 H5N2512CF H5N3007CF Diode BAY 32

    H5N2503P

    Abstract: a225
    Text: H5N2503P Silicon N Channel MOS FET High Speed Power Switching ADE-208-1374A Z 2nd. Edition Jun. 2002 Features • Low on-resistance: RDS(on) = 0.04 Ω typ. • Low leakage current: IDSS = 1 µA max (at VDS = 250 V) • High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A)


    Original     		PDF H5N2503P ADE-208-1374A 15nacher D-85622 D-85619 H5N2503P a225

    Untitled

    Abstract: No abstract text available
    Text: H5N2522FN Silicon N Channel MOS FET High Speed Power Switching REJ03G1573-0210 Rev.2.10 May 08, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate


    Original     		PDF H5N2522FN REJ03G1573-0210 PRSS0003AB-A O-220FN)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet H5N2522FP-E0-E 250V - 12A - MOS FET High Speed Power Switching R07DS0862EJ0100 Rev.1.00 Jul 27, 2012 Features • Low on-resistance RDS on = 0.13  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


    Original     		PDF H5N2522FP-E0-E R07DS0862EJ0100 PRSS0003AG-A O-220FP)

    H5N2514P

    Abstract: H5N2514P-E PRSS0004ZE-A SC-65
    Text: H5N2514P Silicon N Channel MOS FET High Speed Power Switching REJ03G1203-0100 Rev.1.00 May 25.2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A Package name: TO-3P D 1. Gate 2. Drain (Flange)


    Original     		PDF H5N2514P REJ03G1203-0100 PRSS0004ZE-A Unit2607 H5N2514P H5N2514P-E PRSS0004ZE-A SC-65

    H5N2522FN

    Abstract: H5N2522FN-E-T2
    Text: H5N2522FN Silicon N Channel MOS FET High Speed Power Switching REJ03G1573-0210 Rev.2.10 May 08, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate


    Original     		PDF H5N2522FN REJ03G1573-0210 PRSS0003AB-A O-220FN) H5N2522FN H5N2522FN-E-T2

    H5N2513PL

    Abstract: H5N2513PL-E PRSS0004ZF-A
    Text: H5N2513PL Silicon N Channel MOS FET High Speed Power Switching REJ03G1243-0100 Rev.1.00 Jul 25, 2008 Features • Low on-resistance • High speed switching • Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZF-A Package name: TO-3PL


    Original     		PDF H5N2513PL REJ03G1243-0100 PRSS0004ZF-A H5N2513PL H5N2513PL-E PRSS0004ZF-A